One-step electrodeposition of CuInxGa1−xSe2 thin films from a mixture system of ionic liquid and ethanol

2015 ◽  
Vol 39 (10) ◽  
pp. 7742-7745 ◽  
Author(s):  
Ye Lian ◽  
Shanshan Ji ◽  
Lei Zhao ◽  
Jie Zhang ◽  
Peixia Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ionic Liquid ◽  
Band Gap ◽  
High Crystalline Quality ◽  
Cigs Thin Film ◽  
Type Semiconductor ◽  
One Step ◽  
P Type ◽  
Mixture System

Synthesizing high crystalline quality p-type semiconductor CIGS thin film with a band gap of 1.41 eV by galvanostatic electrodeposition.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

scholarly journals Fabrication, Structural, Optical, Electrical Properties and Influence of Complexing Agents on Ternary CuZnS2 Thin Film

2021 ◽  
Vol 33 (11) ◽  
pp. 2762-2766
Author(s):  
E. Anuja ◽  
R. Thiruneelakandan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Plate ◽  
Zinc Sulphide ◽  
Complexing Agents ◽  
Absorption Studies ◽  
Type Semiconductor ◽  
Hall Effect Measurements ◽  
Copper Zinc ◽  
P Type

In the present work, copper zinc sulphide (CuZnS2) thin films with and without complexing agents using glass plate as substrate were prepared. Chemical bath deposition method was employed to deposit the thin films. Powder X-ray diffraction (PXRD) patterns of the prepared films indicate the crystalline nature of CuZnS2 with cubic phases. The SEM and AFM images illustrate that the deposited films were highly influenced on the polyhedral morphology by the complexing agents. The influence of complexing agents on absorbance and band gap of the CuZnS2 thin films were characterized using UV-Vis absorption studies. Hall effect measurements indicate the CuZnS2 thin film without surfactant belongs to p-type semiconductor and become n-type after adding the complexing agents EDTA and Leishman stain. From the I-V curve, all the samples having slow conducting nature was found for changing the voltage with the current from -32 nA to +30 nA using solar stimulator.

scholarly journals The Properties of Sprayed Nanostructured P-Type CuI Films for Dye-Sensitized Solar Cells Application

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
M. N. Amalina ◽  
N. A. Rasheid ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Dye Sensitized Solar Cells ◽  
Deposition Process ◽  
Band Gap Energy ◽  
Dye Sensitized ◽  
Temperature Constant ◽  
P Type ◽  
Sensitized Solar Cells

In our experiments, we provide a new approach for depositing CuI (inorganic compound) thin films using the mister atomizer technique. The CuI solution was sprayed into fine droplets using argon as a carrier gas at different solution concentrations. The solution sprayed was 50 ml for all samples with substrate temperature constant at 50°C during the deposition process. The result shows that the CuI thin film properties strongly depend on its precursor concentration. The structural properties were characterized by XRD with strong (111) orientation shows for all the CuI thin films. FESEM images revealed that all the CuI thin films deposited were uniform with the existence of nanostructured CuI particle. The EDX measurement confirms the existence of Cu:I in the films. The nanostructured CuI will improve the penetration of p-type between the mesoporous matrix of TiO2thin film. Promising conductivity value of about 10° S cm−1was obtained for CuI thin films deposited by this new deposition method. Low transmittance of below 50% was observed for all CuI thin films. The band gap energy obtained here was between 2.82 eV and 2.92 eV which is much smaller than the reported band gap which is 3.1 eV.

scholarly journals Effects of Preparation Conditions on the CuInS2Films Prepared by One-Step Electrodeposition Method

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Rongfeng Guan ◽  
Liu Cao ◽  
Qian Sun ◽  
Yuebin Cao
Keyword(s):  
Thin Films ◽  
Sulfur Content ◽  
Indium Tin Oxide ◽  
Deposition Potential ◽  
X Ray Diffraction ◽  
Preparation Conditions ◽  
Sulfurization Temperature ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

CuInS2thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySzprecursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ratio, sulfurization temperature, and sulfur content on the CuInS2thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.

Thin Film WSe2 for Use as a Photovoltaic Absorber Material

2014 ◽  
Vol 1670 ◽  
Author(s):  
Qinglei Ma ◽  
Hrachya Kyureghian ◽  
Joel D. Banninga ◽  
N. J. Ianno
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Spectrum ◽  
Absorber Material ◽  
Excellent Candidate ◽  
Earth Abundant ◽  
Type Semiconductor ◽  
Sputter Deposited ◽  
P Type

ABSTRACTAn excellent candidate for an earth abundant absorber material is WSe2 which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.4 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in the 1017cm-3 range and p-type Hall mobilities greater than 10 cm2/V-s range can be obtained. We employ these results to numerically simulate solar cells based on this material, where we will show efficiencies greater than 20% are possible.

AgSbSe2 thin films for photovoltaic structures produced through reaction of chemically deposited selenium thin films with Ag and Sb2S3

2004 ◽  
Vol 836 ◽  
Author(s):  
K. Bindu ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Band Gap ◽  
Solid State Reaction ◽  
Optical Band Gap ◽  
Dark Conductivity ◽  
Illumination Intensity ◽  
P Type ◽  
Ag Film

ABSTRACTSelenium thin films (350 nm) deposited from a 0.01 M solution of Na2SeSO3 of pH 4.5 maintained at 10 °C for 13 h, have been used as a source of selenium vapour for reaction with vacuum deposited Ag thin film on chemically deposited Sb2S3+Ag layers. When a stack of Sb2S3+Ag is heated in contact with Se film, AgSbSe2 is formed through solid state reaction of Sb2S3 and Ag2Se. The latter is formed at 80°C through the reaction of Ag-film in Se-vapour. This thin film is photoconductive and p-type. The optical band gap is nearly 1 eV and dark conductivity, 10-3 Ω-1cm-1. This thin film has been incorporated to form a photovoltaic structure, SnO2:F-(n)CdS:In-(i)Sb2S3-(p)AgSbSe2-silver print. Voc> 400 mV and Jsc>12 mA/cm2 have been observed in this under an illumination intensity of 1 kWm-2.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

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