High electrical conductivity of graphene-based transparent conductive films with silver nanocomposites

RSC Advances ◽  
2015 ◽  
Vol 5 (130) ◽  
pp. 108044-108049 ◽  
Author(s):  
Haibin Sun ◽  
Guixian Ge ◽  
Jiejun Zhu ◽  
Hailong Yan ◽  
Yang Lu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Electrical Conductivity ◽  
Electrical And Optical Properties ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Graphene Films ◽  
Alternative Materials ◽  
Silver Nanocomposites

Polycrystalline graphene films grown by chemical vapor deposition (CVD) possess outstanding electrical and optical properties, which make them alternative materials for applications in transparent conductive films (TCF).

Highly stable and conductive PEDOT:PSS/GO-SWCNT bilayer transparent conductive films

2020 ◽  
Vol 44 (3) ◽  
pp. 780-790 ◽  
Author(s):  
Hui Zhao ◽  
Wenming Geng ◽  
Wei-Wei Cao ◽  
Jian-Gong Wen ◽  
Tao Wang ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Double Layer ◽  
Layer Structure ◽  
High Electrical Conductivity ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Double Layer Structure

PEDOT:PSS/GO-SWCNT films with a double-layer structure have high electrical conductivity and stability during bending.

Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition

2021 ◽  
Author(s):  
Yuri Ogura ◽  
Yuta Arata ◽  
Hiroyuki NISHINAKA ◽  
Masahiro YOSHIMOTO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
X Ray Diffraction ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Phase Crystal ◽  
Deep Ultraviolet

Abstract We studied the phase diagram of (In x Ga1−x )2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga1−x )2O3 thin films exhibited three different single-phase crystal structures depending on the value of x: orthorhombic (κ)-(In x Ga1−x )2O3 for x ≤ 0.186, hexagonal (hex)-(In x Ga1−x )2O3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In x Ga1−x )2O3 for x ≥ 0.772. The optical bandgap of (In x Ga1−x )2O3 was tuned from 3.27 eV (bcc-In2O3) and 4.17 eV (hex-InGaO3) to 5.00 eV (κ-Ga2O3). Moreover, hex-(In x Ga1−x )2O3 exhibited a wide bandgap (4.30 eV) and a low resistivity (7.4×10‒1 Ω·cm). Furthermore, hex-(In x Ga1−x )2O3 thin films were successfully grown on GaN and AlGaN/GaN templates. Therefore, hex-(In x Ga1−x )2O3 can be used in transparent conductive films for deep-ultraviolet LEDs.

scholarly journals Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties

2015 ◽  
Vol 6 ◽  
pp. 2028-2038 ◽  
Author(s):  
Andrea Capasso ◽  
Theodoros Dikonimos ◽  
Francesca Sarto ◽  
Alessio Tamburrano ◽  
Giovanni De Bellis ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Pristine Graphene ◽  
Influence Of Process Parameters ◽  
Graphene Films ◽  
Doped Graphene

Graphene films were produced by chemical vapor deposition (CVD) of pyridine on copper substrates. Pyridine-CVD is expected to lead to doped graphene by the insertion of nitrogen atoms in the growing sp2 carbon lattice, possibly improving the properties of graphene as a transparent conductive film. We here report on the influence that the CVD parameters (i.e., temperature and gas flow) have on the morphology, transmittance, and electrical conductivity of the graphene films grown with pyridine. A temperature range between 930 and 1070 °C was explored and the results were compared to those of pristine graphene grown by ethanol-CVD under the same process conditions. The films were characterized by atomic force microscopy, Raman and X-ray photoemission spectroscopy. The optical transmittance and electrical conductivity of the films were measured to evaluate their performance as transparent conductive electrodes. Graphene films grown by pyridine reached an electrical conductivity of 14.3 × 105 S/m. Such a high conductivity seems to be associated with the electronic doping induced by substitutional nitrogen atoms. In particular, at 930 °C the nitrogen/carbon ratio of pyridine-grown graphene reaches 3%, and its electrical conductivity is 40% higher than that of pristine graphene grown from ethanol-CVD.

scholarly journals A simple and efficient approach to fabricate graphene/CNT hybrid transparent conductive films

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52555-52560 ◽  
Author(s):  
Jianhua Zhang ◽  
Zhangfu Chen ◽  
Xiaoxue Xu ◽  
Wei Liao ◽  
Lianqiao Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transparent Conductive Films ◽  
Efficient Approach ◽  
Conductive Films ◽  
Cu Substrates

In this paper, a novel and scalable method to fabricate graphene/carbon nanotube (CNT) hybrid transparent conductive films on Cu substrates, which combines electroplating and chemical vapor deposition (CVD) is proposed and demonstrated.

scholarly journals CdSe:In Mid-Infrared Transparent Conductive Films Prospering Uncooled PbSe/CdSe Heterojunction Photovoltaic Detectors

2021 ◽  
Author(s):  
Jijun Qiu ◽  
Yun Liu ◽  
Zhihua Cai ◽  
Quang Phan ◽  
Zhisheng Shi
Keyword(s):  
Electrical Conductivity ◽  
Infrared Imaging ◽  
Optical Transparency ◽  
Infrared Range ◽  
High Electrical Conductivity ◽  
Conductive Coatings ◽  
Mid Infrared ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Photovoltaic Detectors

Infrared transparent and conductive coatings (ITCCs) are in significant demand in infrared imaging applications. The combination of high optical transparency in infrared range (1-12 μm) and high electrical conductivity, however,...

Material Properties of Sipos Films Prepared by XeCl Excimer Laser Annealing of a-Si:Nx Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Hong-Seok Choi ◽  
Jae-Hong Jun ◽  
Keun-Ho Jang ◽  
Min-Koo Han
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Vapor Deposition ◽  
Material Properties ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Excimer Laser Annealing ◽  
Maximum Value

AbstractThe material properties of laser-annealed a-Si:Nx films were investigated. The a-Si:Nx films for laser-annealing were deposited by rf plasma enhanced chemical vapor deposition (PECVD) with NH3 and SiH4 gas mixtures. At the 0.35 of NH3/SiH4 ratio, the optical band-gap was abruptly increased to 2.82 eV from 2.05 eV by laser-annealing which indicates that Si-N bonding comes to be notable at that ratio. The electrical conductivity showed the maximum value of 4× 10-6 S/cm at the 0.11 of NH3/SiH4 ratio where the grain growth and the increase of Si-N bonding are optimized for the enhancement of electrical conductivity. The σP/σD ratio which is related to the defects states for photo generation centers was decreased with increasing NH 3/SiH 4 ratio. Our experimental data showed that the optical band gap and electrical conductivity of laserannealed a-Si:Nx films were dominantly affected by the NH3/SiH4 ratio at the 250 mJ/cm2 of laser-annealing energy density.

Chemical Vapor Deposition of Strontium-Barium-Niobate

1991 ◽  
Vol 243 ◽  
Author(s):  
A. Greenwald ◽  
M. Horenstein ◽  
M. Ruane ◽  
W. Clouser ◽  
J. Foresi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium Niobate ◽  
Electrical And Optical Properties ◽  
Strontium Barium ◽  
X Ray ◽  
Boston University

AbstractSpire Corporation has deposited strontium-barium-niobate by chemical vapor deposition at atmospheric pressure using Ba(TMHD), Sr(TMHD), and Nb ethoxide. Deposition temperature as 550°C in an isothermal furnace. Films were deposited upon silicon (precoated with silica), platinum, sapphire, and quartz. Materials were characterized by RBS, X-ray diffraction, EDS, electron, and optical microscopy. Electrical and optical properties were measured at Boston University.

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