scholarly journals Graphene stimulates the nucleation and growth rate of NaCl crystals from hypersaline solution via membrane crystallization

2020 ◽  
Vol 6 (6) ◽  
pp. 1723-1736
Author(s):  
Maria Luisa Perrotta ◽  
Francesca Macedonio ◽  
Elena Tocci ◽  
Lidietta Giorno ◽  
Enrico Drioli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Nucleation And Growth ◽  
High Quality ◽  
Hypersaline Water

Advanced graphene engineered membranes designed for sustainable crystallization of high-quality crystals from hypersaline water.

Phase separation in undercooled molten Pd80Si20: Part I

1999 ◽  
Vol 14 (9) ◽  
pp. 3653-3662 ◽  
Author(s):  
K. L. Lee ◽  
H. W. Kui
Keyword(s):  
Growth Rate ◽  
Phase Separation ◽  
Crystal Growth ◽  
Grain Refinement ◽  
Crystallization Temperature ◽  
Sharp Decrease ◽  
Nucleation And Growth ◽  
Crystal Growth Rate ◽  
Large Undercooling ◽  
Kinetic Crystallization

Three different kinds of morphology are found in undercooled Pd80Si20, and they dominate at different undercooling regimens ΔT, defined as ΔT = T1 – Tk, where T1 is the liquidus of Pd80Si20 and Tk is the kinetic crystallization temperature. In the small undercooling regimen, i.e., for ΔT ≤ 190 K, the microstructures are typically dendritic precipitation with a eutecticlike background. In the intermediate undercooling regimen, i.e., for 190 ≤ ΔT ≤ 220 K, spherical morphologies, which arise from nucleation and growth, are identified. In addition, Pd particles are found throughout an entire undercooled specimen. In the large undercooling regimen, i.e., for ΔT ≥ 220 K, a connected structure composed of two subnetworks is found. A sharp decrease in the dimension of the microstructures occurs from the intermediate to the large undercooling regimen. Although the crystalline phases in the intermediate and the large undercooling regimens are the same, the crystal growth rate is too slow to bring about the occurrence of grain refinement. Combining the morphologies observed in the three undercooling regimens and their crystallization behaviors, we conclude that phase separation takes place in undercooled molten Pd80Si20.

High-yield synthesis of CsPbBr3 nanoparticles: Diphenylphosphine as a reducing agent and its effect in Pb-seeding nucleation and growth

2021 ◽  
Author(s):  
Eder Antonio Castillo-Ruiz ◽  
Diana Fabiola Garcia-Gutierrez ◽  
Domingo Ixcóatl Garcia-Gutierrez
Keyword(s):  
Nucleation And Growth ◽  
Reducing Agent ◽  
High Yield ◽  
Reaction Yield ◽  
High Quality ◽  
Stabilizing Agents ◽  
Nucleation Sites ◽  
Nucleation Mechanisms ◽  
Attractive Option ◽  
Mass Increment

Abstract Based on the reported nucleation mechanisms for CsPbX3 and II-VI/IV-VI quantum dots, CsPbBr3 nanoparticles with a high reaction-yield, up to 393% mass-increment, were synthesized by the hot-injection method. The introduction of diphenylphosphine (DPP) as a reducing agent improved nanoparticle nucleation and growth, giving out evidence for Pb-seeding in CsPbBr3 nanoparticles formation. Additionally, a clear influence of the DPP in a CsPbBr3-Cs4PbBr6 incomplete phase transformation was observed, marked by the appearance of several PbBr2 nanoparticles, indicating the need for an improved ratio between the stabilizing agents and the precursors, due to the increased number of nucleation sites produced by the DPP. The resulting CsPbBr3 nanoparticles showed high quality, as they displayed 70%-90% photoluminescence quantum yield (PLQY), narrow size distribution with an average nanoparticle size of ~10 nm and the characteristic cubic morphology reported in previous works. This increment in CsPbBr3 nanoparticles’ reaction yield will contribute to making them a more attractive option for different optoelectronic applications.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1673-1677 ◽  
Author(s):  
H. Guo ◽  
Z.L. Sun ◽  
Q.Y. He ◽  
S.M. Du ◽  
X.B. Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Arc Plasma ◽  
Large Area ◽  
High Quality ◽  
Dc Arc

scholarly journals Revisiting Models for Spheroidal Graphite Growth

2018 ◽  
Vol 925 ◽  
pp. 118-124 ◽  
Author(s):  
Mathias Karsten Bjerre ◽  
Mohammed Azeem ◽  
Peter D. Lee ◽  
Jesper Henri Hattel ◽  
Niels Skat Tiedje
Keyword(s):  
Growth Rate ◽  
Cast Iron ◽  
Numerical Model ◽  
Final Stage ◽  
Nucleation And Growth ◽  
Ductile Cast Iron ◽  
Spheroidal Graphite ◽  
Microstructure Formation ◽  
X Ray ◽  
Graphite Growth

Recent experiments resolved nucleation and growth of graphite during solidification of ductile cast iron in 4D using synchrotron X-ray tomography. A numerical model for microstructure formation during solidification is compared with the experiments. Despite very good overall agreement between observations of spheroidal graphite growth and model results, significant deviations exist towards the end of solidification. We use the experimental observations to analyse the relation between graphite growth rate and the state of the particle neighbourhood to pinpoint possible links between growth rate of individual graphite spheres and the overall solidification state. With this insight we revisit existing models for growth of spheroidal graphite and discuss possible modifications in order to correctly describe the critical final stage of solidification.

Surface composition, bonding, and morphology in the nucleation and growth of ultra-thin, high quality nanocrystalline diamond films

2007 ◽  
Vol 16 (4-7) ◽  
pp. 718-724 ◽  
Author(s):  
Anirudha V. Sumant ◽  
P.U.P.A. Gilbert ◽  
David S. Grierson ◽  
Andrew R. Konicek ◽  
Mike Abrecht ◽  
...  
Keyword(s):  
Surface Composition ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Nanocrystalline Diamond ◽  
High Quality ◽  
Nanocrystalline Diamond Films
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