High-resolution and scalable printing of highly conductive PEDOT:PSS for printable electronics

Journal of Materials Chemistry C ◽

10.1039/d1tc03761g ◽

2021 ◽

Author(s):

Alexander Corletto ◽

Joseph G. Shapter

Keyword(s):

High Resolution ◽

Liquid Bridge ◽

Line Edge Roughness ◽

Printable Electronics ◽

Edge Roughness ◽

Submicron Resolution

Topographical discontinuous dewetting (TDD) and liquid bridge transfer (LBT) was used for submicron resolution, R2R-compatible, high thickness, low line edge roughness patterning of PEDOT:PSS. High conductivities up to ∼2590 S cm−1 were achieved.

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Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.596.78 ◽

2013 ◽

Vol 596 ◽

pp. 78-82

Author(s):

Takuya Komori ◽

Miftakhul Huda ◽

Takashi Akahane ◽

Muneyasu Masuda ◽

Jing Liu ◽

...

Keyword(s):

Block Copolymer ◽

High Resolution ◽

Ammonium Hydroxide ◽

Line Pattern ◽

Line Edge Roughness ◽

Patterned Media ◽

Tetramethyl Ammonium Hydroxide ◽

Edge Roughness ◽

Nanodot Arrays ◽

Self Assembled

We investigated the possibility of ordering of 12 nm pitced self-assembled nanodots from block copolymer (BCP) improved by the guide pattern with low line edge roughness (LER) for patterned media. We found that LER of the line pattern (σ-value) was reduced by using high-resolution salty development for HSQ resist line pattern fabrication compared with conventional tetramethyl ammonium hydroxide (TMAH) developer. By adopting this development technique to guide pattern fabrication, we demonstrated 10 rows of ordered self-assembled BCP nanodot arrays with a size of 6 nm and a pitch of 12 nm (5 Tbit/in.2) between the guide patterns.

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High-NA EUV lithography: current status and outlook for the future

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac49fa ◽

2022 ◽

Author(s):

Harry Jay Levinson

Keyword(s):

High Resolution ◽

Extreme Ultraviolet ◽

Numerical Aperture ◽

High Volume ◽

Current Status ◽

Light Sources ◽

Line Edge Roughness ◽

Optical Scanners ◽

Euv Lithography ◽

Edge Roughness

Abstract High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses with such high NA will have very small depths-of-focus, which will require improved focus systems and significant improvements in wafer flatness during processing. Lenses are anamorphic to address mask 3D issues, which results in wafer field sizes of 26 mm × 16.5 mm, half that of lower NA EUV tools and optical scanners. Production of large die will require stitching. Computational infrastructure is being created to support high-NA lithography, including simulators that use Tatian polynomials to characterize the aberrations of lenses with central obscurations. High resolution resists that meet the line-edge roughness (LER) and defect requirements for high-volume manufacturing (HVM) also need to be developed. High power light sources will also be needed to limit photon shot noise.

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