ScienceGate
Advanced Search
Author Search
Journal Finder
Blog
Sign in / Sign up
ScienceGate
Search
Author Search
Journal Finder
Blog
Sign in / Sign up
Large signal microwave performances of high-k metal gate 28 nm CMOS technology
Electronics Letters
◽
10.1049/el.2012.3443
◽
2012
◽
Vol 48
(25)
◽
pp. 1627-1629
◽
Cited By ~ 1
Author(s):
R. Ouhachi
◽
A. Pottrain
◽
D. Gloria
◽
C. Gaquière
◽
D. Ducatteau
◽
...
Keyword(s):
Cmos Technology
◽
Large Signal
◽
Metal Gate
◽
High K
◽
28 Nm
Get full-text (via PubEx)
Related Documents
Cited By
References
RF power potential of High-k metal gate 28 nm CMOS technology
CAS 2013 (International Semiconductor Conference)
◽
10.1109/smicnd.2013.6688649
◽
2013
◽
Author(s):
R. Ouhachi
◽
A. Pottrain
◽
D. Ducatteau
◽
E. Okada
◽
C. Gaquiere
Keyword(s):
Cmos Technology
◽
Rf Power
◽
Metal Gate
◽
High K
◽
28 Nm
Get full-text (via PubEx)
Modelling and characterisation of flat-band roll-off behaviours in LaOx capped high-K/metal-gate NMOSFET with 28 nm CMOS technology
International Journal of Nanotechnology
◽
10.1504/ijnt.2014.065129
◽
2014
◽
Vol 11
(12)
◽
pp. 1039
Author(s):
Wen Han Hung
◽
Feng Renn Juang
◽
Yean Kuen Fang
◽
Tzyy Ming Cheng
Keyword(s):
Cmos Technology
◽
Flat Band
◽
Metal Gate
◽
High K
◽
28 Nm
Get full-text (via PubEx)
A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology
Japanese Journal of Applied Physics
◽
10.7567/jjap.57.04fb10
◽
2018
◽
Vol 57
(4S)
◽
pp. 04FB10
Author(s):
Yuichiro Ishii
◽
Miki Tanaka
◽
Makoto Yabuuchi
◽
Yohei Sawada
◽
Shinji Tanaka
◽
...
Keyword(s):
Random Access
◽
Random Access Memory
◽
Cmos Technology
◽
Static Random Access Memory
◽
Access Memory
◽
Metal Gate
◽
High K
◽
28 Nm
Get full-text (via PubEx)
Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)
◽
10.1109/istdm.2012.6222439
◽
2012
◽
Cited By ~ 1
Author(s):
E. M. Bazizi
◽
S. M. Pandey
◽
C. Wang
◽
I. Jiang
◽
S. Chu
◽
...
Keyword(s):
Laser Annealing
◽
Device Simulation
◽
Cmos Technology
◽
Metal Gate
◽
Annealing Conditions
◽
High K
Get full-text (via PubEx)
Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation
Solid-State Electronics
◽
10.1016/j.sse.2015.09.013
◽
2016
◽
Vol 115
◽
pp. 7-11
Author(s):
Tsung-Hsien Kao
◽
Shoou-Jinn Chang
◽
Yean-Kuen Fang
◽
Po-Chin Huang
◽
Bo-Chin Wang
◽
...
Keyword(s):
Low Frequency
◽
Frequency Noise
◽
Low Frequency Noise
◽
Metal Gate
◽
High K
◽
Technology Process
◽
28 Nm
Get full-text (via PubEx)
A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management
IEEE Journal of Solid-State Circuits
◽
10.1109/jssc.2009.2034082
◽
2010
◽
Vol 45
(1)
◽
pp. 103-110
◽
Cited By ~ 32
Author(s):
Yih Wang
◽
Uddalak Bhattacharya
◽
Fatih Hamzaoglu
◽
Pramod Kolar
◽
Yong-Gee Ng
◽
...
Keyword(s):
Power Management
◽
Cmos Technology
◽
Metal Gate
◽
High K
◽
Sram Design
Get full-text (via PubEx)
High performance FDSOI CMOS technology with metal gate and high-k
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.
◽
10.1109/.2005.1469272
◽
2005
◽
Cited By ~ 12
Author(s):
B. Doris
◽
Y.H. Kim
◽
B.P. Linder
◽
M. Steen
◽
V. Narayanan
◽
...
Keyword(s):
High Performance
◽
Cmos Technology
◽
Metal Gate
◽
High K
Get full-text (via PubEx)
High voltage MOSFETs integration on advanced CMOS technology: Characterization of thick gate oxides incorporating high k metal gate stack from logic core process
2017 International Conference of Microelectronic Test Structures (ICMTS)
◽
10.1109/icmts.2017.7954274
◽
2017
◽
Cited By ~ 1
Author(s):
Dann Morillon
◽
Franck Julien
◽
Jean Coignus
◽
Alain Toffoli
◽
Loic Welter
◽
...
Keyword(s):
High Voltage
◽
Cmos Technology
◽
Metal Gate
◽
Gate Stack
◽
Gate Oxides
◽
High K
Get full-text (via PubEx)
Low temperature (≤ 380°C) and high performance Ge CMOS technology with novel source/drain by metal-induced dopants activation and high-k/metal gate stack for monolithic 3D integration
2008 IEEE International Electron Devices Meeting
◽
10.1109/iedm.2008.4796702
◽
2008
◽
Cited By ~ 19
Author(s):
Jin-Hong Park
◽
Munehiro Tada
◽
Duygu Kuzum
◽
Pawan Kapur
◽
Hyun-Yong Yu
◽
...
Keyword(s):
Low Temperature
◽
High Performance
◽
Cmos Technology
◽
3D Integration
◽
Metal Gate
◽
Gate Stack
◽
High K
Get full-text (via PubEx)
RF CMOS technology scaling in High-k/metal gate era for RF SoC (system-on-chip) applications
2010 International Electron Devices Meeting
◽
10.1109/iedm.2010.5703431
◽
2010
◽
Cited By ~ 46
Author(s):
C.-H. Jan
◽
M. Agostinelli
◽
H. Deshpande
◽
M. A. El-Tanani
◽
W. Hafez
◽
...
Keyword(s):
Cmos Technology
◽
System On Chip
◽
Rf Cmos
◽
Metal Gate
◽
Technology Scaling
◽
High K
◽
On Chip
Get full-text (via PubEx)
Sign in / Sign up
Close
Export Citation Format
Close
Share Document
Close