scholarly journals Express in-situ measurement of single crystal diamond growth/etching rate in microwave plasma: how to perform multiparametric kinetics study in one working day

2017 ◽  
Vol 149 ◽  
pp. 02001
Author(s):  
V.G. Ralchenko ◽  
V.Yu. Yurov ◽  
E.V. Bushuev ◽  
A.P. Bolshakov ◽  
E.E. Ashkinazi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Etching Rate ◽  
In Situ Measurement ◽  
Diamond Growth ◽  
Kinetics Study ◽  
Single Crystal Diamond ◽  
Working Day

scholarly journals Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

2015 ◽  
Vol 1734 ◽  
Author(s):  
Samuel L. Moore ◽  
Yogesh K. Vohra
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Defect Center ◽  
Defect Centers ◽  
Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

Single Crystal CVD Diamond growth and characterizations

2006 ◽  
Vol 956 ◽  
Author(s):  
Nicolas Olivier Tranchant ◽  
Dominique Tromson ◽  
Zdenek Remes ◽  
Licinio Rocha ◽  
Milos Nesladek ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Optical Emission ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Photocurrent Spectroscopy ◽  
Excited Species ◽  
Single Crystal Diamond

ABSTRACTDue to its radiation harness, single crystal CVD diamond is a remarkable material for the construction of detectors used in hadron physics and for medical therapy. In this work, single crystal CVD diamond plates were grown in a microwave plasma reactor, using home design substrate holder and a relatively high pressure. Optical Emission Spectroscopy was employed during the MW-PECVD growth to characterize excited species present in the plasma and to detect the presence of residual gases such as nitrogen which is unsuitable for detector's applications.The samples were characterized using various methods such as Raman spectroscopy, photoluminescence (PL), photocurrent spectroscopy, Raman mapping, birefringence microscopy, optical microscopy and also AFM. The best sample, exhibits a FWHM for the 1332 cm−1 Raman peak about 1.6 cm−1. Room temperature PL spectra showed no N–related luminescence, confirming the high quality of the grown single crystal diamond.

Laser monitor for imaging single crystal diamond growth in H2-CH4 microwave plasma

2019 ◽  
Vol 120 ◽  
pp. 105716 ◽  
Author(s):  
Gennadiy Evtushenko ◽  
Stanislav Torgaev ◽  
Maxim Trigub ◽  
Dmitry Shiyanov ◽  
Egor Bushuev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Diamond Growth ◽  
Single Crystal Diamond

Etching Kinetics of (100) Single Crystal Diamond Surfaces in a Hydrogen Microwave Plasma, Studied with In Situ Low-Coherence Interferometry

2017 ◽  
Vol 214 (11) ◽  
pp. 1700177 ◽  
Author(s):  
Vladimir Yurov ◽  
Egor Bushuev ◽  
Andrey Bolshakov ◽  
Evgeny Ashkinazi ◽  
Irina Antonova ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Diamond Surfaces ◽  
Low Coherence ◽  
Low Coherence Interferometry ◽  
Single Crystal Diamond ◽  
Kinetics Of

scholarly journals Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 444
Author(s):  
Ruozheng Wang ◽  
Fang Lin ◽  
Gang Niu ◽  
Jianing Su ◽  
Xiuliang Yan ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Crystal Quality ◽  
Diamond Growth ◽  
Sem Images ◽  
High Pressure High Temperature ◽  
Diamond Substrate ◽  
Single Crystal Diamond

A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.

Factors to control uniformity of single crystal diamond growth by using microwave plasma CVD

2016 ◽  
Vol 63 ◽  
pp. 17-20 ◽  
Author(s):  
Hideaki Yamada ◽  
Akiyoshi Chayahara ◽  
Shinya Ohmagari ◽  
Yohiaki Mokuno
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Diamond Growth ◽  
Plasma Cvd ◽  
Single Crystal Diamond ◽  
Microwave Plasma Cvd

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

1995 ◽  
Vol 416 ◽  
Author(s):  
L. C. Chen ◽  
C. C. Juan ◽  
J. Y. Wu ◽  
K. H. Chen ◽  
J. W. Teng
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Morphological Evolution ◽  
Present Report ◽  
Ex Situ ◽  
Nucleation Density ◽  
Induced Current ◽  
Current Time ◽  
Single Crystal Diamond

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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