scholarly journals Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate

2020 ◽  
Vol 327 ◽  
pp. 02003
Author(s):  
Jing Zhou ◽  
Hongjun Chen ◽  
Yang Wang ◽  
Xingming Long
Keyword(s):  
Lattice Constant ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Biaxial Strain ◽  
Factors Affecting ◽  
Electron Mobility Transistors ◽  
Drain Electrode ◽  
Algan Barrier Layer ◽  
Dimensional Electron Gas ◽  
State Breakdown

Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects. In this paper, the effects of inhomogeneous biaxial strain in different regions of the AlGaN barrier layer on electrical properties of normally-off HEMTs with p-GaN gate were discussed. The results show that biaxial strain applied in three regions has different influence on transfer, output and breakdown characteristics of the device. The strain applied in region under gate has the most significant impact on threshold voltage and drain saturation current with a decreasing of 39% and an increasing of 97% respectively as the strained lattice constant increases from 3.173061Å to 3.187229Å.While, strain applied between gate and drain electrode can improve the off-state breakdown voltage by 12% with the increasing of strained lattice constant.

Self-Screening of the polarized electric field in Wurtzite Gallium Nitride along [0001] direction

2021 ◽  
Author(s):  
Qiu-Ling Qiu ◽  
Shi-Xu Yang ◽  
Qian-Shu Wu ◽  
Cheng-Lang Li ◽  
Qi Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Computer Aided Design ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Screening Effect ◽  
White Leds ◽  
Design And Optimization ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

Abstract The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs) and GaN Polarization SuperJunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. So that, we also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.

Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

2014 ◽  
Vol 778-780 ◽  
pp. 1180-1184
Author(s):  
Sebastian Roensch ◽  
Victor Sizov ◽  
Takuma Yagi ◽  
Saad Murad ◽  
Lars Groh ◽  
...  
Keyword(s):  
Quantum Correction ◽  
Weak Localization ◽  
High Electron Mobility Transistors ◽  
Electron Interaction ◽  
High Electron ◽  
Temperature Dependent ◽  
Electron Mobility Transistors ◽  
Shubnikov De Haas Oscillations ◽  
Dimensional Electron Gas

We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations. The results verify the high material quality of the investigated GaN on silicon.

scholarly journals High Electron Mobility Transistors Using AlGaN Materials

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

scholarly journals AlGaN Based High Electron Mobility Transistors

2019 ◽  
Author(s):  
Yu Yun ◽  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

AlGaN/GaN HEMTs with 2DHG Back Gate Control

MRS Advances ◽  
2017 ◽  
Vol 3 (3) ◽  
pp. 137-141 ◽  
Author(s):  
Wei-Tse Lin ◽  
Wen-Chia Liao ◽  
Yi-Nan Zhong ◽  
Yue-ming Hsin
Keyword(s):  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Back Gate ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Gate Control ◽  
Dimensional Electron Gas

ABSTRACTIn this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

FACTORS LIMITING THE MAXIMUM OPERATING VOLTAGE OF MICROWAVE DEVICES

2000 ◽  
Vol 10 (01) ◽  
pp. 119-128
Author(s):  
ENRICO ZANONI ◽  
GAUDENZIO MENEGHESSO ◽  
ALDO DI CARLO ◽  
PAOLO LUGLI ◽  
LORENZO ROSSI
Keyword(s):  
Impact Ionization ◽  
High Electron Mobility Transistors ◽  
Microwave Devices ◽  
Operating Voltage ◽  
High Electron ◽  
Hot Carriers ◽  
Hot Carrier ◽  
Electron Mobility Transistors ◽  
State Breakdown ◽  
Pulsed Measurements

The operating voltage of advanced microwave devices is currently limited by impact-ionization and breakdown effects. An extended study of the effects of hot carriers on the breakdown behavior and reliability of GaAs-based and InP-based HEMTs (high electron mobility transistors) has been carried out by means of pulsed measurements, electroluminescence spectroscopy and microscopy and Monte Carlo simulations. We show that the parasitic bipolar effect, which explains kink effects in HEMTs, can also induce regenerative phenomena eventually leading to on-state breakdown. Results concerning the effects of hot carrier aging on GaAs-based and InP-based HEMTs are summarized.

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