Wave form analysis of constant capacitance–voltage transient deep level transient spectroscopy using an iterative feedback system

A unified approach is presented in the derivation of equations for the constant-voltage capacitance transient and constant-capacitance voltage transient in deep-level transient spectroscopy (DLTS), and for the relationship between them. The validity of these equations is independent of the device and nature of deep traps.

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Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона

Физика и техника полупроводников ◽

10.21883/ftp.2022.01.51812.9729 ◽

2022 ◽

Vol 56 (1) ◽

pp. 53

Author(s):

М.М. Соболев ◽

Ф.Ю. Солдатенков

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Experimental Studies ◽

Shallow Donor ◽

Defect Clusters ◽

Deep Traps ◽

Capacitance Voltage ◽

Before And After ◽

Transient Spectroscopy ◽

Different Doses

The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

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Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

Journal of Applied Physics ◽

10.1063/1.3552303 ◽

2011 ◽

Vol 109 (6) ◽

pp. 064514 ◽

Cited By ~ 43

Author(s):

A. F. Basile ◽

J. Rozen ◽

J. R. Williams ◽

L. C. Feldman ◽

P. M. Mooney

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Capacitance Voltage ◽

Transient Spectroscopy

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Formation of Intrinsic Defects at MBE-Grown GaAs/AlAs Interfaces

MRS Proceedings ◽

10.1557/proc-312-89 ◽

1993 ◽

Vol 312 ◽

Author(s):

P. Krispin ◽

R. Hey ◽

H. Kostial ◽

M. Höricke

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Depth Profiling ◽

Intrinsic Defects ◽

Capacitance Voltage ◽

Charge States ◽

Transient Spectroscopy ◽

Silicon Doped ◽

Arsenic Vacancy

AbstractWe report on a detailed investigation of MBE-grown isotype silicon-doped heterostructures by capacitance/voltage (C/V) technique and deep-level transient spectroscopy (DLTS). A sequence of electrically active defects is found. By depth profiling of the density of the dominant levels it is demonstrated that the corresponding defects are concentrated at the GaAs-on-AlAs (inverted) interface. By comparison with studies on irradiation-induced levels in LPE- or VPE-grown AlGaAs we conclude that the defects at the GaAs/AlAs interface are most probably linked to different charge states of the arsenic vacancy VAs and VAs−ASi pairs.

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