Increase of Boron Ion Beam Current Extracted from a Multi-Cusp Ion Source in an Ion Doping System with Mass Separation

Author(s):  
Yutaka Inouchi ◽  
Shojiro Dohi ◽  
Masahiro Tanii ◽  
Junichi Tatemichi ◽  
Masashi Konishi ◽  
...  

In s.i.m.s. the sample surface is ion bombarded and the emitted secondary ions are mass analysed. When used in the static mode with very low primary ion beam current densities (10 -11 A/mm 2 ), the technique analyses the outermost atomic layers with the following advantages (Benninghoven 1973, I975): the structural—chemical nature of the surface may be deduced from the masses of the ejected ionized clusters of atoms; detection of hydrogen and its compounds is possible; sensitivity is extremely high (10 -6 monolayer) for a number of elements. Composition profiles are obtained by increasing the primary beam current density (dynamic mode) or by combining the technique in the static mode with ion beam machining with a separate, more powerful ion source. The application of static s.i.m.s. in metallurgy has been explored by analysing a variety of alloy surfaces after fabrication procedures in relation to surface quality and subsequent performance. In a copper—silver eutectic alloy braze it was found that the composition of the solid surface depended markedly on its pretreatment. Generally there was a surface enrichment of copper relative to silver in melting processes while sawing and polishing enriched the surface in silver


1976 ◽  
Vol 41 (5) ◽  
pp. 999-1000
Author(s):  
A. P. Kabachenko ◽  
I. V. Kuznetsov ◽  
Li Hen Su ◽  
N. I. Tarantin

2021 ◽  
Vol 8 ◽  
Author(s):  
Yisel Martinez Palenzuela ◽  
Vincent Barozier ◽  
Eric Chevallay ◽  
Thomas E. Cocolios ◽  
Charlotte Duchemin ◽  
...  

CERN-MEDICIS is an off-line isotope separator facility for the extraction of radioisotopes from irradiated targets of interest to medical applications. The beamline, between the ion source and the collection chamber, consists of ion extraction and focusing elements, and a dipole magnet mass spectrometer recovered from the LISOL facility in Louvain-la-Neuve. The latter has been modified for compatibility with MEDICIS, including the installation of a window for injecting laser light into the ion source for resonance photo-ionization. Ion beam optics and magnetic field modeling using SIMION and OPERA respectively were performed for the design and characterization of the beamline. The individual components and their optimal configuration in terms of ion beam extraction, mass separation, and ion transport efficiency is described, along with details of the commissioning and initial performance assessment with stable ion beams.


Radiocarbon ◽  
2010 ◽  
Vol 52 (2) ◽  
pp. 310-318 ◽  
Author(s):  
Yusuke Yokoyama ◽  
Mamito Koizumi ◽  
Hiroyuki Matsuzaki ◽  
Yosuke Miyairi ◽  
Naohiko Ohkouchi

We have developed accelerator mass spectrometry (AMS) measurement techniques for ultra small-size samples ranging from 0.01 to 0.10 mg C with a new type of MC-SNICS ion source system. We can generate 4 times higher ion beam current intensity for ultra-small samples by optimization of graphite position in the target holder with the new ionizer geometry. CO2 gas graphitized in the newly developed vacuum line is pressed to a depth of 1.5 mm from the front of the target holder. This is much deeper than the previous position at 0.35 mm depth. We measured 12C4+ beam currents generated by small standards and ion beam currents (15–30 μA) from the targets in optimized position, lasting 20 min for 0.01 mg C and 65 min for 0.10 mg C. We observed that the measured 14C/12C ratios are unaffected by the difference of ion beam currents ranging from 5 to 30 μA, enabling measurement of ultra-small samples with high precision. Examination of the background samples revealed 1.1 μg of modern and 1 μg of dead carbon contaminations during target graphite preparation. We make corrections for the contamination from both the modern and background components. Reduction of the contamination is necessary for conducting more accurate measurement.


2003 ◽  
Vol 02 (04n05) ◽  
pp. 375-379 ◽  
Author(s):  
A. A. TSENG ◽  
B. LEELADHARAN ◽  
B. LI ◽  
I. INSUA ◽  
C. D. CHEN

The capability of using Focused Ion Beam (FIB) for milling microchannels is experimentally and theoretically investigated. Microchannel structures are fabricated by a NanoFab 150 FIB machine, using an Arsenic (As2+) ion source. A beam current of 5 pA at 90 keV accelerating energy is used. Several microchannel patternings are milled at various dwell times at pixel spacing of 14.5 nm on top of a 60 nm gold-coated silicon wafer. An analytical/numerical model is developed to predict the FIB milling behavior. By comparing with the experimental measurements, the model predictions have been demonstrated to be reliable for guiding and controlling the milling processes.


Silicon ◽  
2018 ◽  
Vol 10 (6) ◽  
pp. 2743-2749 ◽  
Author(s):  
Maryam Salehi ◽  
Ali Asghar Zavarian ◽  
Ali Arman ◽  
Fatemeh Hafezi ◽  
Ghasem Amraee Rad ◽  
...  

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 527
Author(s):  
Alex Belianinov ◽  
Matthew J. Burch ◽  
Anton Ievlev ◽  
Songkil Kim ◽  
Michael G. Stanford ◽  
...  

The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects. We note subtle beam heating effects, which impact the segment angle and the feature size. Additionally, we investigate the competition of material deposition and sputtering during the 3D FIBID process, with helium ion microscopy experiments and Monte Carlo simulations. Our results show complex 3D mesh structures measuring ~300 nm in the largest dimension, with individual features as small as 16 nm at full width half maximum (FWHM). These assemblies can be completed in minutes, with the underlying fabrication technology compatible with existing lithographic techniques, suggesting a higher-throughput pathway to integrating FIBID with established nanofabrication techniques.


2001 ◽  
Vol 686 ◽  
Author(s):  
Jae-Hoon Song ◽  
Duck-Kyun Choi ◽  
Min-Seok Oh ◽  
Won-Kook Choi

AbstractThe junction depth should be less than 0.05 microns to fabricate sub 0.1 micron devices. This requires implanting boron with energy of less than 1 keV. One drawback in a low energy ion source is low throughput due to low ion beam current. At present, boron known for a major p-type dopant for PMOSFET has problem to easily diffuse into Si wafer even in rapid thermal processing by high diffusivity. To resolve this problem, decaborane (B10H14) molecules are implanted to make p+/n junction on n-type Si wafers for low-energy boron dopant source. Ionized decaborane is accelerated at 1∼10 kV and implanted up to dosages from 1×1012/cm2 to 5×1013/cm2. Afterwards, Decaborane implanted Si wafers were post-annealed for 10 sec at 800, 900 and 1000°C, respectively. From RBS results on as-implanted n-type Si wafer implanted at 5 kV, it is observed there are amorphous Si layers with 4 nm in depth and boron ions are implanted up to 1∼5 nm in depth from SIMS analysis. The electrical properties of these p-n junctions are 127∼130 ω/sq. as sheet resistance, +0.3 V turn-on voltage and −1.1 V breakdown voltage obtained from I-V measurement.


Sign in / Sign up

Export Citation Format

Share Document