Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti–Cu thin films

2010 ◽  
Vol 108 (4) ◽  
pp. 043305 ◽  
Author(s):  
Vitezslav Stranak ◽  
Martin Cada ◽  
Zdenek Hubicka ◽  
Milan Tichy ◽  
Rainer Hippler
2019 ◽  
Vol 33 (01n03) ◽  
pp. 1940017 ◽  
Author(s):  
D. L. Ma ◽  
Y. T. Li ◽  
Q. Y. Deng ◽  
B. Huang ◽  
Y. X. Leng ◽  
...  

Titanium (Ti) thin films with (002) or (100) texture are favored for many applications. In this paper, Ti thin films were prepared by high-power pulsed magnetron sputtering, and the texture of Ti thin films was successfully tailored by adjusting the pulse width, substrate bias and magnetic field strength. It is found that the peak power and average power of the Ti target are increased by increasing sputtering pulse width and decreasing magnetic field strength, which raise the Ti plasma flux and ion/atom ratio of Ti ions in front of the substrate simultaneously. Ti thin films with a highly (002) out-of-plane texture can be obtained with higher pulse width and lower magnetic field strength. The Ti thin films with highly (100) out-of-plane texture can be achieved with shorter pulse width, lower magnetic field strength and substrate bias.


Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.


Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109355
Author(s):  
Nils Nedfors ◽  
Daniel Primetzhofer ◽  
Igor Zhirkov ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  

2015 ◽  
Vol 33 (2) ◽  
pp. 021518 ◽  
Author(s):  
Milena A. Moreira ◽  
Tobias Törndahl ◽  
Ilia Katardjiev ◽  
Tomas Kubart

Sign in / Sign up

Export Citation Format

Share Document