scholarly journals Chemical sputtering of graphite by low temperature nitrogen plasmas at various substrate temperatures and ion flux densities

2013 ◽  
Vol 114 (13) ◽  
pp. 133301 ◽  
Author(s):  
K. Bystrov ◽  
T. W. Morgan ◽  
I. Tanyeli ◽  
G. De Temmerman ◽  
M. C. M. van de Sanden
Keyword(s):  
Low Temperature ◽  
Ion Flux ◽  
Chemical Sputtering ◽  
Nitrogen Plasmas ◽  
Substrate Temperatures

Ion-flux characteristics during low-temperature (300 °C) deposition of thermochromic VO2 films using controlled reactive HiPIMS

2018 ◽  
Vol 52 (2) ◽  
pp. 025205 ◽  
Author(s):  
Jaroslav Vlček ◽  
David Kolenatý ◽  
Tomáš Kozák ◽  
Jiří Houška ◽  
Jiří Čapek ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Flux

Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method

2002 ◽  
Vol 17 (8) ◽  
pp. 1888-1891 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Yi Yang ◽  
HoChul Kang ◽  
Kyekyoon (Kevin) Kim ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Cluster Beam ◽  
High Quality ◽  
Carboxylate Ligands ◽  
Si Substrates ◽  
Beam Method ◽  
Temperature Deposition ◽  
Bst Films ◽  
Substrate Temperatures

Low-temperature deposition of high-quality (Ba, Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charged liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280 °C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300 °C and subsequently annealed at 700 °C, were 2.5 × 10−9 A/cm2 at 1.5 V and 305, respectively.

Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

2001 ◽  
Vol 16 (7) ◽  
pp. 1883-1886 ◽  
Author(s):  
Kwang Soo Seol ◽  
Hironao Hiramatsu ◽  
Yoshimichi Ohki ◽  
In-Hoon Choi ◽  
Yong-Tea Kim
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Precursor Film ◽  
Excimer Laser Irradiation ◽  
Low Temperature Crystallization ◽  
Lower Temperature ◽  
Substrate Temperatures ◽  
Induced Crystallization ◽  
Temperature Crystallization

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was inducedby excimer laser irradiation. Both fluorite and perovskite crystalline structures in suchfilms were obtained by excimer laser irradiation at substrate temperatures between 200and 500 °C. Either an addition of excess bismuth in the precursor film or an increasein the substrate temperature enhanced the formation of the perovskite structure in theexcimer laser-induced annealing process, resulting in the perovskite crystalline phase ata relatively lower temperature of 500 °C. Such a low temperature is preferred whenSrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in thislaser-induced crystallization is also discussed.

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