Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

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Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300005032 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 754-760

Author(s):

Giancarlo Salviati ◽

Nicola Armani ◽

Carlo Zanotti-Fregonara ◽

Enos Gombia ◽

Martin Albrecht ◽

...

Keyword(s):

Volume Fraction ◽

Deep Level ◽

Cubic Phase ◽

Donor Level ◽

Yellow Luminescence ◽

Wurtzite Phase ◽

Shallow Acceptor ◽

Deep Donor ◽

P Type ◽

Deep Donor Level

Yellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm-3 by spectral CL (T=K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9-1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

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Ion Implantation For High Performance Ill-V Jfets And Hfets

MRS Proceedings ◽

10.1557/proc-421-209 ◽

1996 ◽

Vol 421 ◽

Author(s):

J. C. Zolper ◽

A. G. Baca ◽

M. E. Sherwin ◽

J. F. Klem

Keyword(s):

Ion Implantation ◽

Conduction Band ◽

Density Of States ◽

High Performance ◽

Electronic Devices ◽

Semiconductor Materials ◽

Comprehensive Treatment ◽

Enabling Technology ◽

Deep Donor ◽

P Type

AbstractIon implantation has been an enabling technology for the realization of many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing technology for application to GaAs JFETs, AlGaAs/GaAs HFETs, and InGaP or InA1P-barrier HFETs. In particular, the GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs will be reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on the donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to the absence of the deep donor (DX) level. An optimized P co-implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

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Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

Materials ◽

10.3390/ma14237384 ◽

2021 ◽

Vol 14 (23) ◽

pp. 7384

Author(s):

Abay Usseinov ◽

Zhanymgul Koishybayeva ◽

Alexander Platonenko ◽

Vladimir Pankratov ◽

Yana Suchikova ◽

...

Keyword(s):

Density Functional Theory ◽

Electronic Structure ◽

First Principles ◽

Density Functional ◽

Functional Theory ◽

Vacancy Defects ◽

Type Conductivity ◽

Deep Donor ◽

P Type ◽

Isolated Point

First-principles density functional theory (DFT) is employed to study the electronic structure of oxygen and gallium vacancies in monoclinic bulk β-Ga2O3 crystals. Hybrid exchange–correlation functional B3LYP within the density functional theory and supercell approach were successfully used to simulate isolated point defects in β-Ga2O3. Based on the results of our calculations, we predict that an oxygen vacancy in β-Ga2O3 is a deep donor defect which cannot be an effective source of electrons and, thus, is not responsible for n-type conductivity in β-Ga2O3. On the other hand, all types of charge states of gallium vacancies are sufficiently deep acceptors with transition levels more than 1.5 eV above the valence band of the crystal. Due to high formation energy of above 10 eV, they cannot be considered as a source of p-type conductivity in β-Ga2O3.

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Влияние барьерных контактов на транспорт носителей заряда в однородных структурах из GaAs, легированных глубокими центрами Cr и EL2

Физика и техника полупроводников ◽

10.21883/ftp.2021.08.51142.9659 ◽

2021 ◽

Vol 55 (8) ◽

pp. 693

Author(s):

М.Г. Верхолетов ◽

И.А. Прудаев

Keyword(s):

Ionizing Radiation ◽

Field Strength ◽

Differential Equations ◽

Electric Field ◽

Electric Field Strength ◽

Barrier Layer ◽

Charge Carriers ◽

System Of Differential Equations ◽

Deep Donor ◽

P Type

The results of studying the transport of charge carriers in GaAs structures doped with deep donor EL2 centers and acceptor levels of Cr for detectors of ionizing radiation and ultrafast photoelectric switches are presented. Three configurations of structures are investigated: p-i-n, n-i-n and p-i-p- types. The system of differential equations for the temperature of charge carriers, Poisson's equations and continuity was solved using a commercial software. It was found that the choice of the type of the barrier layer makes it possible to control the uniformity of the electric field strength in the structures. It is shown that p-i-p- type structures have the best uniformity of the electric field strength.

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Formation of Insulating Layers in GaAs-Aigaas Heterostructures

MRS Proceedings ◽

10.1557/proc-148-397 ◽

1989 ◽

Vol 148 ◽

Author(s):

W. S. Hobson ◽

S. J. Pearton ◽

C. R. Abernathy ◽

A. E. Von Neida

Keyword(s):

Activation Energy ◽

Thermal Activation ◽

Thermal Activation Energy ◽

High Resistivity ◽

Thermally Stable ◽

Damage Compensation ◽

A Value ◽

First Case ◽

Deep Donor ◽

P Type

ABSTRACTWe describe two methods for producing thermally stable high resistivity layers in GaAs-AlGaAs heterostructures. These rely on the interaction of implanted ions with dopant impurities already present in a buried layer in the heterostructure. In the first case, oxygen implanted at a concentration above that of the acceptors in p-type GaAs is shown to create thermally stable, highresistivity material only in the case of Be-doping in the GaAs. The effect is not seen for Mg-, Znor Cd-doping. Similarly there is no apparent interaction of 0 with n-type dopants (S or Si). The Be-O complex in p-type GaAs is a deep donor, creating material whose sheet resistivity shows a thermal activation energy of 0.59 eV. In the second case oxygen implantation into n+ AlGaAs, followed by annealing above 600°C, creates a deep acceptor level that compensates the shallow donors in the material. Temperature dependent Hall measurements show the resistivity of the compensated AlGaAs has a thermal activation energy of 0.49 eV, in contrast to a value of 0.79 eV for non-induced damage compensation.

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Electron Spin Resonance and Ultra Violet (UV) Photoluminescence of Ge Implanted CuGaSe2 Thin Films Prepared by the CCSVT (Chemical Close-spaced Vapor Transport) Technique

MRS Proceedings ◽

10.1557/proc-1012-y12-19 ◽

2007 ◽

Vol 1012 ◽

Author(s):

Serge Doka ◽

Jasmin Hofstetter ◽

Marin Rusu ◽

Ernest Arushanov ◽

Lips Klaus ◽

...

Keyword(s):

Electron Spin Resonance ◽

Electron Spin ◽

Ultra Violet ◽

Vapor Transport ◽

Polycrystalline Thin Film ◽

Spin Resonance ◽

Deep Donor ◽

Donor States ◽

P Type ◽

Peak Emission

AbstractNon-equilibrium ion implantation of Ge in p-type polycrystalline thin film CuGaSe2 (CGSe) prepared by Chemical Close-spaced Vapor Transport (CCSVT) has been performed with the goal to achieve n-type doping of this chalcopyrite semiconductor. Using Electron Spin Resonance (ESR) it is shown that Ge implantation induces a paramagnetic specie at g = 2.003. A model is proposed that assigns the ESR signal to electrons trapped by donor states that are electrically inactive. Moreover, UV photoluminescence of Ge implanted films has evidenced a new peak emission at 1.47 eV, which is resolved as a radiative recombination of a hole bound to the native copper vacancy and an electron bound to a deep donor with an ionization energy of ED =360±10 meV.

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Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131619 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1396-1397

Author(s):

H. Yen ◽

E. P. Kvam ◽

R. Bashir ◽

S. Venkatesan ◽

G. W. Neudeck

Keyword(s):

Integrated Circuits ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Interface Morphology ◽

Oxide Interface ◽

Poly Silicon ◽

Thermal Oxide ◽

Grain Orientations ◽

Polycrystalline Silicon Films ◽

P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

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Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100167342 ◽

1996 ◽

Vol 54 ◽

pp. 976-977

Author(s):

Y. Kikuchi ◽

N. Hashikawa ◽

F. Uesugi ◽

E. Wakai ◽

K. Watanabe ◽

...

Keyword(s):

Inelastic Scattering ◽

Zone Axis ◽

Experimental Result ◽

Background Intensity ◽

Crystal Thickness ◽

Arsenic Atom ◽

Doped Silicon ◽

P Type ◽

Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

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Investigating the functional link between TMEM165 and SPCA1

Biochemical Journal ◽

10.1042/bcj20190488 ◽

2019 ◽

Vol 476 (21) ◽

pp. 3281-3293 ◽

Cited By ~ 2

Author(s):

Elodie Lebredonchel ◽

Marine Houdou ◽

Hans-Heinrich Hoffmann ◽

Kateryna Kondratska ◽

Marie-Ange Krzewinski ◽

...

Keyword(s):

Subcellular Localization ◽

Complete Loss ◽

Protein Family ◽

Uncharacterized Protein ◽

Functional Link ◽

P Type

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.

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