Influence of processing conditions on the properties of thermal sprayed coating: a review

2021 ◽  
pp. 1-34
Author(s):  
Santosh Kumar ◽  
Rakesh Kumar
Keyword(s):  
Processing Conditions ◽  
Sprayed Coating

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Progressive Debonding of Multilayer Interconnect Structures

1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Crack Growth ◽  
Driving Force ◽  
Adhesion Energy ◽  
Time Dependent ◽  
Multilayer Thin Films ◽  
Processing Conditions ◽  
Interface Morphology ◽  
Entire Sample ◽  
Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

Evaluation of the Resistance of Individual Si Die to Cracking

1998 ◽  
Author(s):  
R. Berriche ◽  
R.K. Lowry ◽  
M.I. Rosenfield
Keyword(s):  
Thermal Cycling ◽  
Hardness Test ◽  
Mechanical Stresses ◽  
Test Method ◽  
Processing Conditions ◽  
Micro Hardness ◽  
Test Methodology ◽  
Vickers Micro Hardness

Abstract The present work investigated the use of the Vickers micro-hardness test method to determine the resistance of individual die to cracking. The results are used as an indicator of resistance to failure under the thermal and mechanical stresses of packaging and subsequent thermal cycling. Indentation measurements on die back surfaces are used to determine how changes in wafer backside processing conditions affect cracks that form around impressions produced at different loads. Test methodology and results obtained at different processing conditions are discussed.

Detecting the 10 Angstroms That Change MEMS Performance

2004 ◽  
Author(s):  
Erika Schutte ◽  
Jack Martin
Keyword(s):  
Thin Films ◽  
Device Performance ◽  
Processing Conditions ◽  
Packaging Process ◽  
Mems Sensor ◽  
Process Characterization ◽  
Measurement Protocol ◽  
Mems Device

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.

scholarly journals On the Relevance of Volumetric Energy Density in the Investigation of Inconel 718 Laser Powder Bed Fusion

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 538 ◽  
Author(s):  
Fabrizia Caiazzo ◽  
Vittorio Alfieri ◽  
Giuseppe Casalino
Keyword(s):  
Surface Roughness ◽  
Energy Density ◽  
Process Parameters ◽  
Vickers Hardness ◽  
Powder Bed Fusion ◽  
Processing Conditions ◽  
Laser Powder Bed Fusion ◽  
Powder Bed ◽  
Fractional Density ◽  
Experimental Variation

Laser powder bed fusion (LPBF) can fabricate products with tailored mechanical and surface properties. In fact, surface texture, roughness, pore size, the resulting fractional density, and microhardness highly depend on the processing conditions, which are very difficult to deal with. Therefore, this paper aims at investigating the relevance of the volumetric energy density (VED) that is a concise index of some governing factors with a potential operational use. This paper proves the fact that the observed experimental variation in the surface roughness, number and size of pores, the fractional density, and Vickers hardness can be explained in terms of VED that can help the investigator in dealing with several process parameters at once.

Sign in / Sign up

Export Citation Format

Share Document