scholarly journals Temperature dependence on the pesticide sampling rate of polar organic chemical integrative samplers (POCIS)

2016 ◽  
Vol 80 (10) ◽  
pp. 2069-2075 ◽  
Author(s):  
Yoshinori Yabuki ◽  
Takashi Nagai ◽  
Keiya Inao ◽  
Junko Ono ◽  
Nobuyuki Aiko ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Sampling Rate ◽  
Organic Chemical

scholarly journals Sampling Rate of Polar Organic Chemical Integrative Sampler (POCIS): Influence Factors and Calibration Methods

2020 ◽  
Vol 10 (16) ◽  
pp. 5548 ◽  
Author(s):  
Liyang Wang ◽  
Ruixia Liu ◽  
Xiaoling Liu ◽  
Hongjie Gao
Keyword(s):  
Organic Pollutants ◽  
Quantitative Methods ◽  
Sampling Rate ◽  
Weighted Average ◽  
Supplementary Information ◽  
Future Application ◽  
Organic Chemical ◽  
Sampling Device ◽  
In Situ Conditions ◽  
Calibration Methods

As a passive sampling device, the polar organic chemical integrative sampler (POCIS) has the characteristics of simple operation, safety, and reliability for assessing the occurrence and risk of persistent and emerging trace organic pollutants. The POCIS, allowing for the determination of time-weighted average (TWA) concentration of polar organic chemicals, exhibits good application prospects in aquatic environments. Before deploying the device in water, the sampling rate (Rs), which is a key parameter for characterizing pollutant enrichment, should be determined and calibrated accurately. However, the Rs values strongly depend on experimental hydrodynamic conditions. This paper provides an overview of the current situation of the POCIS for environmental monitoring of organic pollutants in an aquatic system. The principle and theory of the POCIS are outlined. In particular, the effect factors such as the ambient conditions, pollutant properties, and device features on the Rs are analyzed in detail from aspects of impact dependence and mechanisms. The calibration methods of the Rs under laboratory and in situ conditions are summarized. This review offers supplementary information on comprehensive understanding of mechanism and application of the POCIS. Nevertheless, the Rs were impacted by a combined effect of solute–sorbent–membrane–solution, and the influence extent of each variable was still unclear. On this basis, the ongoing challenges are proposed for the future application of the POCIS in the actual environment, for instance, the need for this device to be improved in terms of quantitative methods for more accurate measurement of the Rs.

Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

MRS Advances ◽  
2017 ◽  
Vol 2 (3) ◽  
pp. 135-140 ◽  
Author(s):  
V. X. Ho ◽  
S. P. Dail ◽  
T. V. Dao ◽  
H. X. Jiang ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Excited State ◽  
Temperature Dependence ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Simple Approach ◽  
Organic Chemical ◽  
Photoluminescence Intensity ◽  
First Excited State ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 → 4I9/2) excitation using a Ti:Sapphire laser (λexc = 809 nm). High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN have been performed to identify the crystal filed splitting of the first excited state, 4I13/2. Here, we have employed a simple approach to determine activation energies which are related to the thermal population of electrons from the lowest level to the higher level of the crystal field splitting of the first excited state.

Monitoring of veterinary pharmaceuticals in the Bienne river (Jura Mountain, France)

2021 ◽  
Author(s):  
Elie Dhivert ◽  
Bertrand Devillers ◽  
Maha Al Badany ◽  
Leslie Mondamert ◽  
Jérôme Labanowski
Keyword(s):  
Sampling Rate ◽  
Low Flow ◽  
Organic Chemical ◽  
Flood Events ◽  
Catchment Scale ◽  
Veterinary Pharmaceuticals ◽  
Freshwater Organisms ◽  
Rural And Urban ◽  
Run Off ◽  
Jura Mountain

<p>The Bienne river (Jura Mountain, France) drains a basin of medium altitude mountains characterized by extensive cattle breeding (mostly dairy cows). A monitoring of the contamination by veterinary pharmaceuticals was performed using passive sampling devices - POCIS (Polar Organic Chemical Integrative Samplers), between September 2019 and January 2020. Four hydrological conditions were analysed: a sever low-flow periods, two flood events and a winter situation close to the mean interannual flow. Each time, POCIS were exposed over 2 weeks at 2 stations located in the upper and downstream reaches of the river. 19 pharmaceuticals were selected from information given by local veterinarians and analysed by LC MS-MS: endo and ectoparasites treatments; antibiotics and non-steroidal anti-inflammatory drugs. The monitoring shows that most of these chemicals (12 substances) are quantified in all POCIS samples and the others show relatively high occurrences, between 25 and 88%. Average concentrations in water (calculated with the sampling rate i.e. considering the time of exposition of POCIS samplers in the river) are remarkably close between the 2 monitoring stations. Concentrations are high all over the studied period and reach a maximum during flood events. Thus, hazardous effects are expected on freshwater organisms, especially for macrocyclic lactones and pyrethroids and organophosphates pesticides. The antibiotics concentrations ranges can also disturb microbial communities existing in the river. Such results highlight an important impregnation by these pharmaceuticals at the catchment scale, involving diffuse sources as grasslands receiving contaminated cow dungs and manures. Veterinary compounds are strongly remobilized during rain episodes by run off and infiltration in soils. In the hydrogeological context of the Bienne basin, karstic flows emphasize the connectivity between grasslands and the river. Therefore, an important part of the contaminated leaching waters can rapidly reach the river via the soil drains and surface / subsurface flows. Rather than another part goes through less porosity pathways and delivers pollutants over a longer period. Wastewater discharges and sludges from rural and urban treatment plants can also contribute to this pollution for pharmaceuticals also used in human medications.</p>

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Magnetic Domains and Wall Structures

1972 ◽  
Vol 30 ◽  
pp. 496-497
Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa
Keyword(s):  
Temperature Dependence ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Iron Film ◽  
Objective Lens ◽  
Lorentz Microscopy ◽  
Domain Structures ◽  
Wall Structures ◽  
Crystal Films ◽  
Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

The extended Fourier algorithm: Application in discrete optics and electron holography

1994 ◽  
Vol 52 ◽  
pp. 918-919
Author(s):  
E. Voelkl ◽  
L. F. Allard
Keyword(s):  
Fourier Transform ◽  
Fourier Transforms ◽  
Sampling Rate ◽  
Electron Holography ◽  
Optical Bench ◽  
Fourier Space ◽  
Ccd Cameras ◽  
Simulated Image ◽  
Initial Sampling ◽  
Fourier Algorithm

The conventional discrete Fourier transform can be extended to a discrete Extended Fourier transform (EFT). The EFT allows to work with discrete data in close analogy to the optical bench, where continuous data are processed. The EFT includes a capability to increase or decrease the resolution in Fourier space (thus the argument that CCD cameras with a higher number of pixels to increase the resolution in Fourier space is no longer valid). Fourier transforms may also be shifted with arbitrary increments, which is important in electron holography. Still, the analogy between the optical bench and discrete optics on a computer is limited by the Nyquist limit. In this abstract we discuss the capability with the EFT to change the initial sampling rate si of a recorded or simulated image to any other(final) sampling rate sf.

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