The temperature-dependent defect density of a-Si:H calculated from thermally activated conductivity

1992 ◽  
Vol 4 (50) ◽  
pp. 10433-10444
Author(s):  
V Kirbs ◽  
T Drusedau ◽  
H Fiedler
1991 ◽  
Vol 219 ◽  
Author(s):  
T. Drusedau ◽  
V. Kirbs ◽  
H. Fiedler

ABSTRACTThermally activated conductivity of a—Si:H at a slow cooling rate of 0.3 K/min is connected with temperature dependent changes of the mobility gap states. By means of the Fermi—level shift calculated from these data and a density of states model it is possible to determine this dependence. The results mainly reveal a decrease of the defect state density by about a tenth between 375 K and 400 K.


Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4215
Author(s):  
Roxana E. Patru ◽  
Hamidreza Khassaf ◽  
Iuliana Pasuk ◽  
Mihaela Botea ◽  
Lucian Trupina ◽  
...  

The frequency and temperature dependence of dielectric properties of CH3NH3PbI3 (MAPI) crystals have been studied and analyzed in connection with temperature-dependent structural studies. The obtained results bring arguments for the existence of ferroelectricity and aim to complete the current knowledge on the thermally activated conduction mechanisms, in dark equilibrium and in the presence of a small external a.c. electric field. The study correlates the frequency-dispersive dielectric spectra with the conduction mechanisms and their relaxation processes, as well as with the different transport regimes indicated by the Nyquist plots. The different energy barriers revealed by the impedance spectroscopy highlight the dominant transport mechanisms in different frequency and temperature ranges, being associated with the bulk of the grains, their boundaries, and/or the electrodes’ interfaces.


1991 ◽  
Vol 113 (4) ◽  
pp. 388-394 ◽  
Author(s):  
O. B. Fedoseev ◽  
S. Malkin

An analysis is presented to predict the hardness distribution in the subsurface of hardened steel due to tempering and rehardening associated with high temperatures generated in grinding. The grinding temperatures are modeled with a triangular heat source at the grinding zone and temperature-dependent thermal properties. The temperature history, including the effect of multiple grinding passes, is coupled with thermally activated reaction equations for tempering and for reaustenitization which is the rate controlling step in rehardening. Experimental results from the literature are found to be in good agreement with the analytical predictions.


1997 ◽  
Vol 52 (5) ◽  
pp. 447-456
Author(s):  
Ingo Biertümpel ◽  
Hans-Herbert Schmidtke

Abstract Lifetime measurements down to nearly liquid helium temperatures are used for determining energy levels and transition rates between excited levels and relaxations into the ground state. Energies are obtained from temperature dependent lifetimes by fitting experimental curves to model functions pertinent for thermally activated processes. Rates are calculated from solutions of rate equations. Similar parameters for pure and doped Pt(IV) hexahalogeno complexes indicate that excited levels largely belong to molecular units. Some of the rates between excited states are only somewhat larger than decay rates into the ground state, which is a consequence of the polyexponential decay measured also at low temperature (2 K). In the series of halogen complexes, the rates between spinorbit levels resulting from 3T1g increase from fluorine to bromine, although energy splittings become larger. Due to the decreasing population of higher excited states in this series, K^PtFö shows a tri-exponential, K2PtCl6 a bi-exponential and FoPtBr6 a mono-exponential decay. In the latter case the population density of higher excited states relaxes so fast that emission occurs primarily from the lowest excited Γ3(3T1g) level. Phase transitions and emission from chromophores on different sites can also be observed.


2019 ◽  
Vol 963 ◽  
pp. 465-468
Author(s):  
Stephan Wirths ◽  
Giovanni Alfieri ◽  
Alyssa Prasmusinto ◽  
Andrei Mihaila ◽  
Lukas Kranz ◽  
...  

We investigated the influence of forming gas annealing (FGA) before and after oxide deposition on the SiO2/4H-SiC interface defect density (Dit). For MOS capacitors (MOSCAPs) that were processed using FGAs at temperatures above 1050°C, CV characterization revealed decreased flat band voltage shifts and stretch-out for different sweep directions and frequencies. Moreover, constant-capacitance deep level transient spectroscopy (CC-DLTS) was performed and showed Dit levels below 1012 cm-2eV-1 for post deposition FGA at 1200°C. Finally, lateral MOSFETs were fabricated to analyze the temperature-dependent threshold voltage (Vth) shift.


Author(s):  
E. Mantelli ◽  
C. Schoof

The onset of sliding in ice sheets may not take the form of a sharp boundary between regions at the melting point, in which sliding is permitted, and regions below that temperature, in which there is no slip. Such a hard switch leads to the paradox of the bed naturally wanting to refreeze as soon as sliding has commenced. A potential alternative structure is a region of subtemperate sliding. Here temperatures are marginally below the melting point and sliding velocities slower than they would if the bed was fully temperate. Rather than being controlled by a standard sliding law, sliding velocities are then constrained by the need to maintain energy balance. This thermal structure arises in temperature-dependent sliding laws in the limit of strong sensitivity to temperature. Here, we analyse the stability of such subtemperate regions, showing that they are subject to a set of instabilities that occur at all length scales between ice thickness and ice sheet length. The fate of these instabilities is to cause the formation of patches of frozen bed, raising the possibility of highly complicated cold-to-temperate transitions with spatial structures at short length scales that cannot be resolved in large-scale ice sheet simulation codes.


1967 ◽  
Vol 45 (2) ◽  
pp. 481-492 ◽  
Author(s):  
B. Escaig ◽  
G. Fontaine ◽  
J. Friedel

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.The first part analyzes a model for the thermal variation of macroyield in b.c.c. metals. If one assumes that the dislocations of such metals split along either the (110) or the (112) planes, the screw dislocations will be sessile. The strong temperature variation of macroyield could be due to the thermally activated slip of such screws, previously developed at lower stresses during the less temperature-dependent microyield. Reasonably high stacking-fault energies are required for satisfactory numerical fits.The second part studies the influence of a dense dislocation network on the propagation of a stacking fault. The friction force acting on the partial that propagates the fault must be taken into account when deducing a stacking-fault energy from the stress at which stacking faults develop in a strongly work-hardened (f.c.c.) metal. The trails of dipoles left at each tree crossed should prevent any creation of point defects; they should lead, after the faults have propagated some length, to its multiplication into a twin or martensitic lamella. The analogies with problems of slip bauds and dipole formation in easy glide are stressed.


Inorganics ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 14
Author(s):  
Patrick Herr ◽  
Oliver S. Wenger

Diisocyanide ligands with a m-terphenyl backbone provide access to Mo0 complexes exhibiting the same type of metal-to-ligand charge transfer (MLCT) luminescence as the well-known class of isoelectronic RuII polypyridines. The luminescence quantum yields and lifetimes of the homoleptic tris(diisocyanide) Mo0 complexes depend strongly on whether methyl- or tert-butyl substituents are placed in α-position to the isocyanide groups. The bulkier tert-butyl substituents lead to a molecular structure in which the three individual diisocyanides ligated to one Mo0 center are interlocked more strongly into one another than the ligands with the sterically less demanding methyl substituents. This rigidification limits the distortion of the complex in the emissive excited-state, causing a decrease of the nonradiative relaxation rate by one order of magnitude. Compared to RuII polypyridines, the molecular distortions in the luminescent 3MLCT state relative to the electronic ground state seem to be smaller in the Mo0 complexes, presumably due to delocalization of the MLCT-excited electron over greater portions of the ligands. Temperature-dependent studies indicate that thermally activated nonradiative relaxation via metal-centered excited states is more significant in these homoleptic Mo0 tris(diisocyanide) complexes than in [Ru(2,2′-bipyridine)3]2+.


2000 ◽  
Vol 621 ◽  
Author(s):  
Kimon C. Palinginis ◽  
A. Ilie ◽  
W.I. Milne ◽  
J. David Cohen

ABSTRACTWe have applied junction capacitance and transient photocapacitance measurements to undoped tetrahedral amorphous carbon (ta-C)/silicon carbide (SiC) heterostructures to deduce defect densities and defect distributions in ta-C. The junction capacitance measurements show two thermally activated processes. One can be related to the activation of carriers out of defects at the ta-C/SiC interface while the other one with an activation energy of 0.36eV is an intrinsic property of the ta-C. The defect density at the ta-C/SiC interface is estimated to be roughly 9 ± 2 × 109 cm−2. The transient photocapacitance measurements have allowed us to observe the broader band tail of ta-C, giving a value (Urbach energy) of 230meV.


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