Nanotwin orientation on history-dependent stress decay in Cu nanopillar under constant strain

2021 ◽  
Author(s):  
Yu-An Shen ◽  
LI CHANG ◽  
Shou-Yi Chang ◽  
Yi-Chia Chou ◽  
King-Ning Tu ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Dislocation Slip ◽  
In Situ Tem ◽  
Mechanical And Thermal Properties ◽  
Dislocation Interaction ◽  
Free Zone ◽  
Loading Direction ◽  
Dislocation Behavior ◽  
Stress Drops

Abstract Cu with nanotwin (NT) possesses great electrical, mechanical, and thermal properties and has potential for electronic applications. Various studies have reported the effect of NT orientation on Cu mechanical properties. However, its effect on Cu stress-relaxation behavior has not been clarified, particularly in nano-scale. In this study, Cu nanopillars with various orientations were examined by a picoindenter under constant strain and observed by in-situ TEM. The angles between the twin plane and the loading direction in the examined nanopillars were 0°, 60°, to 90°, and a benchmark pillar of single-crystal Cu without NT was examined. The stress drops were respectively 10%, 80%, 4%, and 50%. Owing to the interaction by NT, the dislocation behavior in nanopillars was different from that in bulk or in thin film samples. Especially, the rapid slip path of dislocations to go to the free surface of the nanopillar induced a dislocation-free zone in the 0° nanopillar, which led to work-softening. On the contrary, a high dislocation density was observed in the 90° nanopillar, which was generated by dislocation interaction and obstruction of dislocation slip by twin planes, and it led to work-hardening. The findings reveal the NT orientation in Cu nanopillars affected stress relaxation significantly.

scholarly journals In situ TEM study of dislocation slip in a metastable β titanium alloy

2012 ◽  
Vol 66 (6) ◽  
pp. 371-373 ◽  
Author(s):  
P. Castany ◽  
M. Besse ◽  
T. Gloriant
Keyword(s):  
Titanium Alloy ◽  
Dislocation Slip ◽  
In Situ Tem

In-situ TEM study of dislocation interaction with twin boundary and retraction in twinned metallic nanowires

2020 ◽  
Vol 196 ◽  
pp. 304-312 ◽  
Author(s):  
Guangming Cheng ◽  
Sheng Yin ◽  
Chengjun Li ◽  
Tzu-Hsuan Chang ◽  
Gunther Richter ◽  
...  
Keyword(s):  
Twin Boundary ◽  
In Situ Tem ◽  
Metallic Nanowires ◽  
Dislocation Interaction

Dislocation Interaction with a Σ=3 Grain Boundary Observed by in situ TEM

1998 ◽  
Vol 294-296 ◽  
pp. 397-400 ◽  
Author(s):  
T. Vystavěl ◽  
Alain Jacques ◽  
A. Gemperle ◽  
J. Gemperlová ◽  
A. George
Keyword(s):  
Grain Boundary ◽  
In Situ Tem ◽  
Dislocation Interaction

scholarly journals Direct observation of individual dislocation interaction processes with grain boundaries

2016 ◽  
Vol 2 (11) ◽  
pp. e1501926 ◽  
Author(s):  
Shun Kondo ◽  
Tasuku Mitsuma ◽  
Naoya Shibata ◽  
Yuichi Ikuhara
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Materials ◽  
High Angle ◽  
Dislocation Interaction ◽  
Structural Stabilization ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Dislocation Behavior ◽  
Geometric Effects

In deformation processes, the presence of grain boundaries has a crucial influence on dislocation behavior; these boundaries drastically change the mechanical properties of polycrystalline materials. It has been considered that grain boundaries act as effective barriers for dislocation glide, but the origin of this barrier-like behavior has been a matter of conjecture for many years. We directly observe how the motion of individual dislocations is impeded at well-defined high-angle and low-angle grain boundaries in SrTiO3, via in situ nanoindentation experiments inside a transmission electron microscope. Our in situ observations show that both the high-angle and low-angle grain boundaries impede dislocation glide across them and that the impediment of dislocation glide does not simply originate from the geometric effects; it arises as a result of the local structural stabilization effects at grain boundary cores as well, especially for low-angle grain boundaries. The present findings indicate that simultaneous consideration of both the geometric effects and the stabilization effects is necessary to quantitatively understand the dislocation impediment processes at grain boundaries.

scholarly journals In situ TEM Investigation of the Electroplasticity Phenomenon on Dislocation Behavior in Ti-6wt%Al

2021 ◽  
Vol 27 (S1) ◽  
pp. 3096-3097
Author(s):  
Xiaoqing Li ◽  
Shiteng Zhao ◽  
Ruopeng Zhang ◽  
John Turner ◽  
Karen C Bustillo ◽  
...  
Keyword(s):  
In Situ Tem ◽  
Dislocation Behavior

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

Postmortem and in situ TEM methods to study the mechanism of failure in controlled-morphology high-impact polystrene resin

1996 ◽  
Vol 54 ◽  
pp. 178-179
Author(s):  
R. C. Cieslinski ◽  
M. T. Dineen ◽  
J. L. Hahnfeld
Keyword(s):  
Poisson Ratio ◽  
Acrylonitrile Butadiene Styrene ◽  
High Impact ◽  
In Situ Tem ◽  
Styrene Copolymers ◽  
Controlled Morphology ◽  
Point Bend ◽  
Mechanism Of Failure ◽  
Impact Energies

Advanced Styrenic resins are being developed throughout the industry to bridge the properties gap between traditional HIPS (High Impact Polystyrene) and ABS (Acrylonitrile-Butadiene-Styrene copolymers) resins. These new resins have an unprecedented balance of high gloss and high impact energies. Dow Chemical's contribution to this area is based on a unique combination of rubber morphologies including labyrinth, onion skin, and core-shell rubber particles. This new resin, referred as a controlled morphology resin (CMR), was investigated to determine the toughening mechanism of this unique rubber morphology. This poster will summarize the initial studies of these resins using the double-notch four-point bend test of Su and Yee, tensile stage electron microscopy, and Poisson Ratio analysis of the fracture mechanism.

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