Substrate surface engineering for high-quality silicon/aluminum superconducting resonators

2018 ◽  
Vol 31 (12) ◽  
pp. 125013 ◽  
Author(s):  
C T Earnest ◽  
J H Béjanin ◽  
T G McConkey ◽  
E A Peters ◽  
A Korinek ◽  
...  
Keyword(s):  
Surface Engineering ◽  
Substrate Surface ◽  
Superconducting Resonators ◽  
High Quality

scholarly journals Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 449
Author(s):  
Shuxian Cai ◽  
Xingfang Liu ◽  
Xin Zheng ◽  
Zhonghua Liu
Keyword(s):  
Substrate Surface ◽  
Graphene Film ◽  
Graphene Ribbon ◽  
High Quality ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Few Layer Graphene

Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by μ-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 μm and a length up to 1000 μm, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Control of Iron Disilicide Crystal Structure by Using Liquid Phase Obtained by Au-Si Eutectic Reaction

2015 ◽  
Vol 1760 ◽  
Author(s):  
Kensuke Akiyama ◽  
Yuu Motoizumi ◽  
Hiroshi Funakubo
Keyword(s):  
Liquid Phase ◽  
Photoluminescence Spectrum ◽  
Radiative Recombination ◽  
Single Phase ◽  
Eutectic Reaction ◽  
Substrate Surface ◽  
Low Density ◽  
Si Substrate ◽  
High Quality ◽  
Iron Disilicide

ABSTRACTThe Au-Si liquid phase was obtained by melting the Si surface via Au-Si eutectic reaction, which contributed to the formation of semiconducting iron disilicide (β-FeSi2), on Au-coated Si(100) substrates. By coating a substrate with an Au layer of 60 nm or more, the Au-Si liquid phase covered the entire Si substrate surface, and single-phase β-FeSi2 was grown on Si(100) substrates. A clear photoluminescence spectrum of β-FeSi2 indicated the formation of high-quality crystals with a low density of the non-radiative recombination center in the grains.

High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers

2005 ◽  
Vol 2 (7) ◽  
pp. 2109-2112 ◽  
Author(s):  
C. Hallin ◽  
A. Kakanakova-Georgieva ◽  
P. Persson ◽  
E. Janzén
Keyword(s):  
Substrate Surface ◽  
Epitaxial Layers ◽  
High Quality ◽  
Homoepitaxial Layers

Wet Etching Methods for Perovskite Substrates

1999 ◽  
Vol 587 ◽  
Author(s):  
Victor Leca ◽  
Guus Rijnders ◽  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
Horst Rogalla
Keyword(s):  
Ph Value ◽  
Substrate Surface ◽  
High Energy ◽  
Etching Time ◽  
Epitaxial Thin Films ◽  
Etch Pits ◽  
High Quality ◽  
Oxide Electronics ◽  
Force Microscopy ◽  
Atomically Flat

AbstractIn oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3) are presented. In order to obtain high quality substrates, different etchants (NH4F + HF, HCl + NH4Cl, and HCl + HNO3) with various pH values have been studied. From Atomic Force Microscopy (AFM), in air, we conclude that, irrespective of the etchant that has been used, a substrate surface with a BOx terminated layer and atomically flat terraces without etch pits could be obtained. The pH-value and temperature of the etchant and the etching time, however, influence significantly the surface quality. Reflection high energy electron diffraction (RHEED) patterns confirmed the AFM results.

Growth of SnS van der Waals Epitaxies on Layered Substrates

2013 ◽  
Vol 1493 ◽  
pp. 213-217 ◽  
Author(s):  
S.F. Wang ◽  
W.K. Fong ◽  
W. Wang ◽  
K.K. Leung ◽  
C. Surya
Keyword(s):  
Molecular Beam ◽  
Crystal Size ◽  
Substrate Surface ◽  
Van Der Waals ◽  
Layered Materials ◽  
Substantial Improvement ◽  
High Quality ◽  
Rocking Curve ◽  
Large Lattice ◽  
Unit Layer

ABSTRACTIn this paper we present systematic investigations on the growth of SnS van der Waals epitaxies (vdWEs) on different substrates, including crystalline and layered substrates, by molecular beam epitaxy (MBE). Experimental growth of SnS on conventional 3D substrates, such as GaAs, indicates strong interaction between the SnS layer and the substrate resulting in poor crystallinity in general. Substantial improvement in the film crystallinity can be obtained when the deposition is made on layered substrates, with saturated surface bonds, as observed in SnS films deposited on mica and crystalline substrates with a graphene buffer layer. Crystal size as large as one micron and rocking curve FWHM of 0.118° was observed despite the large lattice mismatches. This represents significant improvement over the reported value of ∼3°. Several symmetric growth orientations are observed for films grown on mica substrates. The results indicate that weak vdW interactions between the saturated bonds of the substrate surface and the SnS unit layer which is an important factor for achieving high quality epitaxy layered materials.

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

2018 ◽  
Vol 435 ◽  
pp. 163-169 ◽  
Author(s):  
Liegen Huang ◽  
Yuan Li ◽  
Wenliang Wang ◽  
Xiaochan Li ◽  
Yulin zheng ◽  
...  
Keyword(s):  
Epitaxial Film ◽  
Substrate Surface ◽  
Si Substrate ◽  
High Quality

The Preparation of Crystalline NbSe2/TiSe2 Superlattices from Modulated Elemental Reactants

1995 ◽  
Vol 382 ◽  
Author(s):  
Myungkeun Noh ◽  
James Thiel ◽  
David C. Johnson
Keyword(s):  
Diffraction Data ◽  
Substrate Surface ◽  
Domain Size ◽  
High Angle ◽  
High Quality ◽  
Rocking Curve ◽  
Modulated Elemental Reactants ◽  
Unit Cells ◽  
Controlled Crystallization ◽  
Elemental Reactants

ABSTRACTThree new crystalline NbSe2/TiSe2 superlattice compounds with 43.472±0.005A, 80.66±0.03A and 117.9±0.1Å unit cells in thec direction were prepared through controlled crystallization of Ti/Se/Nb/Se superlattice reactants with different compositional layer thicknesses. Theta-theta and rocking curve data were collected using a theta-theta diffractometer to study the evolution of the initially layered reactants into the crystalline superlattices as a function of temperature. Low angle diffraction data demonstrates that the initial layered reactant contracts in the c-axis direction upon initial annealing and suggests that the interfaces become smoother during this initial interdiffusion. High angle rocking curve diffraction data shows the development of caxis oriented NbSe2fTiSe2 crystal growth perpendicular to the substrate surface. Theta-theta scans show a gradual decrease of the (001) diffraction linewidths of the growing compound as a function of annealing time and temperature indicating an increase in the c-axis domain size. High quality caxis oriented TiSe2/NbSe2 crystalline superlattices result from annealing at the relatively low temperature of 500ºC. The rational synthesis of intergrowth compounds from superlattice reactants as described herein will permit the tailoring of physical properties as a function of compositional layer thicknesses and nativeproperties of the parent compounds.

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