scholarly journals Effects of Post-Deposition Annealing Time in Forming Gas Ambient on Y2O3 Films Deposited on Silicon Substrate

2020 ◽  
Vol 1535 ◽  
pp. 012031
Author(s):  
Way Foong Lim ◽  
Kuan Yew Cheong ◽  
Zainuriah Hassan ◽  
Hock Jin Quah
Keyword(s):  
Annealing Time ◽  
Silicon Substrate ◽  
Post Deposition Annealing ◽  
Post Deposition

Formation of Cylindrical Nanoholes in Heavily Doped P-Type Si(100) Substrate via Pt Nanoparticles-Assisted Chemical Etching

2012 ◽  
Vol 535-537 ◽  
pp. 362-367 ◽  
Author(s):  
Bao Zhu ◽  
Lian Jie Li ◽  
Qing Qing Sun ◽  
Hong Liang Lu ◽  
Shi Jin Ding ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Chemical Etching ◽  
Early Stage ◽  
Pt Nanoparticles ◽  
High Concentration ◽  
Post Deposition Annealing ◽  
Heavily Doped ◽  
Underlying Mechanisms ◽  
P Type ◽  
Post Deposition

Metal assisted chemical etching of heavily doped p-type Si(100) wafer was investigated in a solution containing HF and hydrogen peroxide using Pt nanoparticles as catalyst. The Pt nanoparticles were formed on Si(100) substrate by magnetron sputtering and post-deposition annealing. In a solution containing low concentration HF, formation of cylindrical nanoholes are unstable in the early stage of the etching process. After that, nanoholes with diameters ranging from 40 to 50 nm are stably formed in silicon substrate and the calculated growing rate is 60 nm/min. Instead, in a solution containing high concentration HF, cylindrical nanoholes with a diameter of about 10 nm can be stably produced in silicon substrate all the time and the growing rate is increased to as fast as 160 nm/min. In both cases, no Pt nanoparticles are observed at the bottom of the nanoholes. Finally, the underlying mechanisms of the aforementioned phenomena are also discussed.

scholarly journals Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

2020 ◽  
Vol 8 ◽  
pp. 970-975 ◽  
Author(s):  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Zhuangzhuang Hu ◽  
Zhaoqing Feng ◽  
Hepeng Zhang ◽  
...  
Keyword(s):  
Surface Treatments ◽  
Interfacial Property ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

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