scholarly journals Terahertz detector utilizing a SiO2/Graphene/SiO2 sandwich suspended at the feed of a planar antenna

2021 ◽  
Vol 2086 (1) ◽  
pp. 012048
Author(s):  
I Belikov ◽  
M Rybin ◽  
A Prikhodko ◽  
D Mikhailov ◽  
I Gayduchenko ◽  
...  
Keyword(s):  
Heat Sink ◽  
Fill Factor ◽  
Fabrication Process ◽  
Planar Antenna ◽  
Antenna Feed ◽  
Terahertz Detector

Abstract We report on the fabrication of a terahertz detector utilizing a SiO2/graphene/SiO2 sandwich suspended at the planar antenna feed. This design of the detector aims to enhance its sensitivity via weakening of the heat sink between graphene’s phonons and those of the substrate. We achieve complete suspension of the sandwich only in case of a low fill-factor of the antenna feed area. Evaluated DC parameters of the samples are consistent with those reported in the literature. The fabrication process developed is suitable for implementing the detector proposed for signal frequencies up to several terahertz.

scholarly journals 17.2% efficiency CuIn1−xGaxSe2 thin-film based mini-module thanks to alternative architecture yielding 81% fill factor

2019 ◽  
Vol 10 ◽  
pp. 4
Author(s):  
Justine Lorthioir ◽  
Ludovic Arzel ◽  
Stéphane Ginestar ◽  
Lionel Assmann ◽  
Nicolas Barreau
Keyword(s):  
Thin Film ◽  
Small Area ◽  
Output Voltage ◽  
Fill Factor ◽  
Promising Result ◽  
Fabrication Process ◽  
Module Structure ◽  
Standard Cell ◽  
In Series

An alternative to conventional Cu(In,Ga)Se2 module structure is proposed and experimentally investigated. This alternative module structure, which consists in applying metallic buses to connect monolithically adjacent cells in series, is likely to offer the opportunity of minimizing both optical and electrical losses observed in conventional module structure compared to small area cells. The fabrication process of such alternative modules is presented. The performances achieved are discussed in comparison with a standard small-area-cell elaborated simultaneously. Despite slightly lower output voltage per cell, the alternative module structure demonstrates an efficiency of 17.2% (with 81% fill factor), against 16.4% (with 75% fill factor) for the standard cell. This promising result opens new routes to decrease the gap observed between small-area-cells and industrial modules.

scholarly journals Precise Positioning of Terfenol-D Actuator by Eliminating the Heat Generated by Coil

2016 ◽  
Vol 10 (9) ◽  
pp. 232 ◽  
Author(s):  
M. Ahanpanjeh ◽  
M. Ghodsi ◽  
Y. Hojjat
Keyword(s):  
Thermal Expansion ◽  
Direct Current ◽  
Heat Sink ◽  
Cooling System ◽  
Fabrication Process ◽  
Thermoelectric Cooler ◽  
Precise Positioning ◽  
Industrial Use ◽  
Dc Current ◽  
And Control

Large displacement, large generated stress and easy fabrication process lead to the large industrial use of the magnetostrictive materials. However, the thermal expansion restricts their application in precise positioning, which is about 12  and too much to be neglected. In this research, the cooling system was exploited in order to eliminate the joule heat generated by coils under the direct current and solve inaccuracy problem. The investigation consists of two parts; first was design and fabricating the actuator of Terfenol-D with length of 30mm which offers 10  displacement under the DC current of 1A, and second was the cooling system consisting of the thermoelectric cooler, heat sink and control circuit to inhibit the Terfenol-D temperature to be increased. Without the cooling system, as the time was going on and the Terfenol-D was warming up, after about two hours the displacement reached to 68  which deteriorated the accuracy of positioning significantly. By applying the cooling system, the displacement was maintained in 10  with the tolerance of , which realized the precise positioning by the Terfenol-D actuator.

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

Cooling Performance Analysis of Heat Sink

2011 ◽  
Vol 1 (9) ◽  
pp. 65-67
Author(s):  
Pritesh S Patel ◽  
◽  
Prof. Dattatraya G Subhedar ◽  
Prof. Kamlesh V Chauhan
Keyword(s):  
Performance Analysis ◽  
Heat Sink ◽  
Cooling Performance

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Kinetics of Light-Induced Effects in Mixed-Phase Hydrogenated Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Guozhen Yuea ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Equivalent Circuit Model ◽  
Open Circuit ◽  
Mixed Phase ◽  
Silicon Solar Cells ◽  
Initial Increase ◽  
Soaking Time ◽  
Hydrogenated Silicon ◽  
Kinetics Of

AbstractWe have observed a significant light-induced increase in the open-circuit voltage (Voc) of mixed-phase hydrogenated silicon solar cells. In this study, we investigate the kinetics of the light-induced effects. The results show that the cells with different initial Voc have different kinetic behavior. For the cells with a low initial Voc (less than 0.8 V), the increase in Voc is slow and does not saturate for light-soaking time of up to 16 hours. For the cells with medium initial Voc (0.8 ∼ 0.95 V), the Voc increases rapidly and then saturates. Cells with high initial Voc (0.95 ∼ 0.98 V) show an initial increase in Voc, followed bya Voc decrease. All light-soaked cells exhibit a degradation in fill factor. The temperature dependence of the kinetics shows that light soaking at high temperatures causes Voc increase to saturate faster than at low temperatures. The observed results can be explained by our recently proposed two-diode equivalent-circuit model for mixed-phase solar cells.

Phase Control and Calibration Characteristics of Optically Controlled Phased Array Antenna Feed Using Multiple SMFs

2011 ◽  
Vol E94-C (10) ◽  
pp. 1634-1640 ◽  
Author(s):  
Daiki TAKEUCHI ◽  
Wataru CHUJO ◽  
Shin-ichi YAMAMOTO ◽  
Yahei KOYAMADA
Keyword(s):  
Phased Array ◽  
Phase Control ◽  
Array Antenna ◽  
Antenna Feed ◽  
Phased Array Antenna
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