scholarly journals Structural and morphological characterization of TiO2-SnO2 thin film prepared by combining doctor-blade and sol-gel techniques

2017 ◽  
Vol 188 ◽  
pp. 012062 ◽  
Author(s):  
S R Adawiyah ◽  
Endarko
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Sno2 Thin Film ◽  
Doctor Blade

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Numerical simulation of the liquid phase in SnO2 thin film deposition by sol-gel-dip-coating

2010 ◽  
Vol 55 (3) ◽  
pp. 385-393 ◽  
Author(s):  
Dayene M. Carvalho ◽  
Jorge L. B. Maciel ◽  
Leandro P. Ravaro ◽  
Rogério E. Garcia ◽  
Valdemir G. Ferreira ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Liquid Phase ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Dip Coating ◽  
Film Deposition ◽  
Sno2 Thin Film

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

scholarly journals Visible emission from Er-doped SnO2 thin films deposited by sol-gel

Cerâmica ◽  
2007 ◽  
Vol 53 (326) ◽  
pp. 187-191 ◽  
Author(s):  
L. P. Ravaro ◽  
E. A. Morais ◽  
L. V. A. Scalvi ◽  
M. Siu Li
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Tin Dioxide ◽  
Sol Gel ◽  
Precursor Solution ◽  
Dip Coating ◽  
Sno2 Thin Film ◽  
Rare Earth Ion ◽  
Electron Hole ◽  
Er Doped

Emission from Er-doped SnO2 thin film deposited via sol-gel by the dip coating technique is obtained in the range 500-700 nm with peak at 530 nm (green). Electron-hole generation in the tin dioxide matrix is used to promote the rare-earth ion excitation. Evaluation of crystallite dimensions through X-ray diffraction results leads to nanoscopic size, what could play a relevant role in the emission spectra. The electron-hole mechanism is also responsible for the excitation of the transition in the 1540 nm range in powders obtained from the same precursor solution of films. The thin film matrix presents a very useful shape for technological application, since it allows integration in optical devices and the application of electric fields to operate electroluminescent devices.

scholarly journals Effects of strain on La0.67-x Prx Ca0.33 MnO3, LaMn1-x Cox O3 and LaMn1-x Nix O3 magnetite samples

DYNA ◽  
2019 ◽  
Vol 86 (211) ◽  
pp. 278-287
Author(s):  
Javier Alberto Olarte Torres ◽  
María Cristina Cifuentes Arcila ◽  
Harvey Andrés Suárez Moreno
Keyword(s):  
Compressive Strength ◽  
Magnetic Susceptibility ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Electric Resistivity ◽  
The Other ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
X Ray

This paper presents the results obtained from the synthesis and morphological characterization of different magnetite samples:  La0.67-x Prx Ca0.33 MnO3.LaMn1-x Cox O3 and LaMn1-x Nix O3 at 0.13 ≤ 𝑥𝑥 ≤ 0.67 produced by a solid-state reaction mechanism and 𝐿𝐿𝐿𝐿𝑀𝑀𝑀𝑀1−𝑥𝑥(𝐶𝐶𝐶𝐶/𝑁𝑁𝑁𝑁)𝑥𝑥𝑂𝑂3 at 0.0 ≤ 𝑥𝑥 ≤ 0.5 produced by the sol-gel method. These samples were characterized using X-ray diffraction spectroscopy and by measuring electric resistivity and magnetic susceptibility which were carried out as a function of temperature. Notably, the effects of strain and compressive strength on the lattices of magnetite samples were highly dependent on the concentration of 𝑃𝑃𝑟𝑟, 𝐶𝐶𝐶𝐶, and 𝑁𝑁𝑁𝑁. Moreover, the transition temperatures of metal-insulator and ferromagnetic-paramagnetic phases also largely depend on these strength effects, e.g., at higher concentrations of 𝑃𝑃𝑟𝑟, effects of increased strain strength were observed, relocating the shifts of ferromagnetic-paramagnetic transitions to lower temperatures. On the other hand, effects of increased compressive strength were observed at higher concentrations of 𝑁𝑁𝑁𝑁 and 𝐶𝐶𝐶𝐶, relocating the shifts of ferromagnetic-paramagnetic and metal-insulator transitions to higher temperatures.

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