scholarly journals Propagation of priors for more accurate and efficient spectroscopic functional fits and their application to ferroelectric hysteresis

2021 ◽  
Author(s):  
Nicole Creange ◽  
Kyle Kelley ◽  
Christopher Smith ◽  
Daniel Sando ◽  
Oliver Paul ◽  
...  
Keyword(s):  
Ferroelectric Hysteresis

scholarly journals Hafnium Zirconium Oxide Thin Films for CMOS Compatible Pyroelectric Infrared Sensors

2021 ◽  
Vol 6 (1) ◽  
pp. 27
Author(s):  
Clemens Mart ◽  
Malte Czernohorsky ◽  
Kati Kühnel ◽  
Wenke Weinreich
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Cost Effective ◽  
Atomic Layer ◽  
Lead Zirconate ◽  
Temperature Oscillation ◽  
Current Profile ◽  
Infrared Sensors ◽  
Integrated Sensor ◽  
Ferroelectric Hysteresis

Pyroelectric infrared sensors are often based on lead-containing materials, which are harmful to the environment and subject to governmental restrictions. Ferroelectric Hf1−xZrxO2 thin films offer an environmentally friendly alternative. Additionally, CMOS integration allows for integrated sensor circuits, enabling scalable and cost-effective applications. In this work, we demonstrate the deposition of pyroelectric thin films on area-enhanced structured substrates via thermal atomic layer deposition. Scanning electron microscopy indicates a conformal deposition of the pyroelectric film in the holes with a diameter of 500 nm and a depth of 8 μm. By using TiN electrodes and photolithography, capacitor structures are formed, which are contacted via the electrically conductive substrate. Ferroelectric hysteresis measurements indicate a sizable remanent polarization of up to 331 μC cm−2, which corresponds to an area increase of up to 15 by the nanostructured substrate. For pyroelectric analysis, a sinusoidal temperature oscillation is applied to the sample. Simultaneously, the pyroelectric current is monitored. By assessing the phase of the measured current profile, the pyroelectric origin of the signal is confirmed. The devices show sizable pyroelectric coefficients of −475 μC m−2 K−1, which is larger than that of lead zirconate titanate (PZT). Based on the experimental evidence, we propose Hf1−xZrxO2 as a promising material for future pyroelectric applications.

Piezoelectric Shear Mode Inkjet Actuator

2001 ◽  
Vol 687 ◽  
Author(s):  
Jürgen Brünahl ◽  
Alex M. Grishin ◽  
Sergey I. Khartsev ◽  
Carl Österberg
Keyword(s):  
Electromechanical Coupling ◽  
Microelectromechanical Systems ◽  
Electromechanical Coupling Factor ◽  
Coupling Factor ◽  
Shear Mode ◽  
Drop On Demand ◽  
Ink Jet ◽  
Ferroelectric Hysteresis ◽  
Comprehensive Characterization

AbstractWe report on comprehensive characterization of piezoelectric shear mode inkjet actuators micromachined into bulk Pb(Zr0.53Ti0.47)O3 (PZT) ceramics. The paper starts with an overview of different inkjet technologies such as continuous jet and drop-on-demand systems, whereat main attention is turned on piezoelectric systems particularly Xaar-type shear mode inkjet color printheads. They are an example of complex microelectromechanical systems (MEMS) and comprise a ferroelectric array of 128 active ink channels (75νm wide and 360νm deep). Detailed information about manufacturing and principles of operation are given. Several techniques to control manufacturing processes and to characterize properties of the piezoelectric material are described: dielectric spectroscopy to measure dielectric permittivity ε and loss tanσ; ferroelectric hysteresis P-E loop tracing to get remnant polarization Pr and coercive field Ec, and a novel pulsed technique to quantify functional properties of the PZT actuator such as acoustic resonant frequencies and electromechanical coupling factor. Stroboscope technique has been employed to find correlation between the degradation of ink-jet performance and heat/high voltage treatment resulting in ferroelectric fatigue.

EFFECT OF PROCESSING CONDITIONS ON ELECTRICAL PROPERTIES OF CaCu3Ti4O12 CERAMICS

2010 ◽  
Vol 24 (12) ◽  
pp. 1267-1273 ◽  
Author(s):  
RAMAN KASHYAP ◽  
TANUJ DHAWAN ◽  
PRIKSHIT GAUTAM ◽  
O. P. THAKUR ◽  
N. C. MEHRA ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Nonlinear Behavior ◽  
Ferroelectric Hysteresis Loop ◽  
Processing Conditions ◽  
Reaction Route ◽  
Sintering Time ◽  
Maximum Value ◽  
Solid State Reaction Route ◽  
Ferroelectric Hysteresis

CaCu 3 Ti 4 O 12 ( CCTO ) ceramics were prepared by the solid-state reaction route. Effect of sintering time was studied on the polarization (P) versus electric field (E) behavior. Unlike conventional ferroelectric hysteresis loop, PE hysteresis behavior in CCTO ceramics was observed to exhibit ferroelectric-like loop where polarization does not saturate but gives a maximum value. Remnant polarization and maximum polarization was observed to increase with sintering time. Current (I)–voltage (V) characteristics shows a nonlinear behavior making them useful for varistor applications. Coefficient of non-linearity (α) is also found to depend on sintering duration.

Crystalline and Electrical Properties of Ferroelectric Silver Niobate-tantalate thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Jung-Hyuk Koh ◽  
S.I. Khartsev ◽  
Alex Grishin ◽  
Vladimir Petrovsky
Keyword(s):  
Temperature Stability ◽  
Frequency Dispersion ◽  
Processing Temperature ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Ferroelectric State ◽  
X Ray ◽  
Ferroelectric Hysteresis ◽  
First Time

AbstractFor the first time AgTa0.38Nb0.62O3 (ATN) films have been grown on the La0.7Sr0.3CoO3 (LSCO)/LaAlO3 single crystal as well as onto Pt80Ir20 (PtIr) polycrystalline substrate. Comprehensive X-ray diffraction analyses reveal epitaxial quality of ATN and LSCO films on the LaAlO3(001) substrate, while ATN/PtIr films have been found to be (001) preferentially oriented. Dielectric spectroscopy performed for ATN films and bulk ceramics in a wide temperature range 77 to 420 K shows the structural monoclinic M1-to-monoclinic M2 phase transition occurs in films at the temperature 60 °C lower than in ceramics. The tracing of the ferroelectric hysteresis P-E loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields remnant polarization of 0.4 μC/cm2 @ 77 K. Weak frequency dispersion, high temperature stability of dielectric properties as well as low processing temperature of 550 °C make ATN films to be attractive for various applications.

scholarly journals Dielectric Anisotropy in Partially Grain-Oriented Bi2VO5.5Ceramics

1995 ◽  
Vol 18 (3) ◽  
pp. 137-144 ◽  
Author(s):  
K. V. R. Prasad ◽  
K. B. R. Varma
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Grain Orientation ◽  
Hysteresis Loops ◽  
Dielectric Constants ◽  
Dielectric Anisotropy ◽  
Ferroelectric Domains ◽  
Ferroelectric Hysteresis ◽  
Microstructural Studies ◽  
Scanning Electron

Ceramics obtained from quenching melts of prereacted polycrystalline Bi2V5.5exhibit grain orientation (~ 55%). Microstructural studies carried out using scanning electron microscopy (SEM) on subsequently annealed ceramics show ferroelectric domains. These post-annealed ceramics possess dielectric anisotropies of about 1:1.2 at 300 K and 1:4.3 in the vicinity of the Curie temperature (~ 730 K) between the directions parallel and perpendicular to the quenching direction. The dielectric constants of the samples, obtained by quenching the melts, are higher than that of the post-annealed ceramics. Electrically poled and thermally cycled samples of both as-quenched and post-annealed exhibit ferroelectric hysteresis loops at 300 K.

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

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