Line Dislocation Dynamics

Author(s):  
Vasily Bulatov ◽  
Wei Cai

In the preceding chapters we have discussed several computational approaches focused on the structure and motion of single dislocations. Here we turn our attention to collective motion of many dislocations, which is what the method of dislocation dynamics (DD) was designed for. Typical length and time scales of DD simulations are on the order of microns and seconds, similar to in situ transmission electron microscopy (TEM) experiments where dislocations are observed to move in real time. In a way, DD simulations can be regarded as a computational counterpart of in situ TEM experiments. One very valuable aspect of such a “computational experiment” is that one has full control of the simulation conditions and access to the positions of all dislocation lines at any instant of time. Provided the dislocation model is realistic, DD simulations can offer important insights that help answer the fundamental questions in crystal plasticity, such as the origin of the complex dislocation patterns that emerge during plastic deformation and the relationship between microstructure, loading conditions and the mechanical strength of the crystal. So far, two approaches to dislocation dynamics simulations have emerged. In the line DD method to be discussed in this chapter, dislocations are represented as mathematical lines in an otherwise featureless host medium. An alternative approach is to rely on a continuous field of eigenstrains, in which regions of high strain gradients reveal the locations of the dislocation lines. This representation leads to the phase field DD approach, which will be discussed in Chapter 11. Line DD has certain similarities with the models discussed in the previous chapters, but, at the same time, is rather different from all of them. For example, the representation of dislocations by line segments in line DD method is similar to the kinetic Monte Carlo (kMC) model of Chapter 9. However, having to deal with multiple dislocations on large length and times scales necessitates a more economical treatment of dislocations in the line DD method. Thus, line DD usually relies on less detailed discretization of dislocation lines and treats dislocation motion as deterministic.

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.


1994 ◽  
Vol 364 ◽  
Author(s):  
A. Korner

AbstractThe domain structure and the evolution of antiphase boundaries (APBs) have been investigated in Fe-Al by means of “in-situ” transmission electron microscopy (TEM) heating experiments. Single crystals with composition Fe22.1at%Al and Fe25.6at%Al have been used.The grown-in structure of the Fe22.1at%al single crystal is composed of DO3 ordered particles embedded in the disorderd ±-matrix. A bimodal distribution of the particles was found. Small ordered particles are in between the large precipitates which are surrounded by particle-free zones. Numerous of this large ordered precipitates contain APBs. Crossing the transition temperature to the disordered phase, the small particles dissolve into the ±-matrix and the large particles start to shrink by dissolving.The single crystal with composition Fe25.6at%Al was found to be completely DO3 ordered. The grown-in domains are separated by APBs of type a′0/2〈100〉. At temperatures far below the transition temperature to the B2 phase no significant change in the APB and domain structure has been detected. In contrast, a remarkable evolution in the APB structure has been observed approaching the transition temperature. Coarsening of the domains has been found. Furthermore, APBs of B2-type (a′0/4〈lll〉 shear) are dragged out by dislocation motion. B2- and DC3-type APBs react and junctions are formed. With increasing annealing time, the density of B2-type boundaries increases. The TEM image is dominated by B2-type boundaries linked by the D03-type boundaries. The DO3 superlattice spots are clearly excited approaching the transition temperature to B2. Above the transition temperature, the DO3 spots disappear completely and the diffraction pattern reveals B2 long range order.


2016 ◽  
Vol 2 (3) ◽  
pp. e1501671 ◽  
Author(s):  
Hosni Idrissi ◽  
Caroline Bollinger ◽  
Francesca Boioli ◽  
Dominique Schryvers ◽  
Patrick Cordier

The rheology of the lithospheric mantle is fundamental to understanding how mantle convection couples with plate tectonics. However, olivine rheology at lithospheric conditions is still poorly understood because experiments are difficult in this temperature range where rocks and mineral become very brittle. We combine techniques of quantitative in situ tensile testing in a transmission electron microscope and numerical modeling of dislocation dynamics to constrain the low-temperature rheology of olivine. We find that the intrinsic ductility of olivine at low temperature is significantly lower than previously reported values, which were obtained under strain-hardened conditions. Using this method, we can anchor rheological laws determined at higher temperature and can provide a better constraint on intermediate temperatures relevant for the lithosphere. More generally, we demonstrate the possibility of characterizing the mechanical properties of specimens, which can be available in the form of submillimeter-sized particles only.


2004 ◽  
Vol 854 ◽  
Author(s):  
Jin Ho An ◽  
P.J. Ferreira

ABSTRACTThermal fatigue during processing of microelectronic devices is a general reliability issue of concern in the microelectronic industry. In particular, as devices continue to be downscaled, the relaxation mechanisms operating under thermal stresses are expected to change. In this study, the microstructure of 1.8 micron and 180 nm wide Cu interconnects was identified through Transmission Electron Microscopy (TEM) imaging. In addition, In-situ TEM heating, performed in both type of specimens, is used to observe the differences in dislocation dynamics under thermal stress. In-situ TEM observations show delamination and inhibited dislocation motion in 180nm Cu lines, whereas in 1.8 micron Cu lines, grain boundaries seemed to act as dislocation sources. These different deformation mechanisms are expected to have an impact on the thermal fatigue behavior of Cu interconnects as the scale of devices is brought below 100 nm.


1991 ◽  
Vol 238 ◽  
Author(s):  
F. D. Tichelaar ◽  
F. W. Schapink

ABSTRACTIn this paper the structure of a (011)-Σ=3 twist boundary in ordered Cu3Au is analysed geometrically. Wrong nearest-neighbour bonds can be avoided by facetting on an atomic scale along common {112} planes, together with a rigid-body translation parallel to one of the facets as measured in earlier work. In the specimen different translational states were found in different areas of the [165]-Σ=3 boundary by transmission electron microscopy (TEM). One of the translations was in agreement with the model, the other was associated with a presumably energetically more unfavourable structure. The in situ observation at 230 °C of the motion of the dislocation separating the different boundary areas was associated with a transformation of the boundary structure with the higher energy into the more favourable structure. Therefore, it is likely that the driving force of the dislocation motion was a difference in boundary energy.


2014 ◽  
Vol 70 (a1) ◽  
pp. C226-C226
Author(s):  
Paulo Ferreira

The deformation behavior of nanoscale metals continues to be an exciting area for materials research. However, in the case of single crystal 0-D nanoscale metals, no deformation experiments, to our knowledge, have been performed at the nanoscale. The one experiment closest to the nanoscale was an in-situ TEM compression of ~200 nm Si nanoparticles. However, the particle tested was too large to extract relevant information at the nanoscale and the mechanical deformation of Si is also expected to be different from that of metals. For nanoparticles it is claimed there is a conspicuous lack of dislocations, regardless of the materials processing history, even after significant deformation. Therefore, it has been suggested that dislocations cannot exist or/ do not play a role on the deformation of 0-D nanomaterials. To address this issue of the role played by dislocations in the deformation of 0-D nanomaterials, nanoparticles with diameters <20nm were compressed in-situ under phase-contrast in a transmission electron microscope (TEM). Two phase-contrast TEM experiments were done, one in a conventional TEM and the other in an aberration corrected TEM. Evidence for nucleation of dislocations and dislocation motion was observed during in-situ TEM nanoindentation, but upon unloading dislocations were no longer visible. A new model for explaining dislocation instability is introduced. In this model we consider the change in Gibbs free energy of an edge dislocation, as it moves through the nanoparticle, towards the surface. The nanoindentation experiments seem to confirm the model proposed.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.


Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.


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