From tissue retrieval to electron tomography: nanoscale characterization of the interface between bone and bioactive glass

The success of biomaterials for bone regeneration relies on many factors, among which osseointegration plays a key role. Biogran (BG) is a bioactive glass commonly employed as a bone graft in dental procedures. Despite its use in clinical practice, the capability of BG to promote osseointegration has never been resolved at the nanoscale. In this paper, we present the workflow for characterizing the interface between newly formed bone and BG in a preclinical rat model. Areas of bone–BG contact were first identified by backscattered electron imaging in a scanning electron microscope. A focused ion beam in situ lift-out protocol was employed to prepare ultrathin samples for transmission electron microscopy analysis. The bone–BG gradual interface, i.e. the biointerphase, was visualized at the nanoscale with unprecedented resolution thanks to scanning transmission electron microscopy. Finally, we present a method to view the bone–BG interface in three dimensions using electron tomography.

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Transmission Electron Microscopy Analysis of Mo–W–S–Se Film Sliding Contact Obtained by Using Focused Ion Beam Microscope and In Situ Microtribometer

Tribology Letters ◽

10.1007/s11249-008-9360-z ◽

2008 ◽

Vol 32 (1) ◽

pp. 49-57 ◽

Cited By ~ 39

Author(s):

J. J. Hu ◽

R. Wheeler ◽

J. S. Zabinski ◽

P. A. Shade ◽

A. Shiveley ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

Sliding Contact ◽

Transmission Electron Microscopy Analysis ◽

Transmission Electron ◽

Electron Microscopy Analysis ◽

Microscopy Analysis

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TEM Sample Preparation Tricks for Advanced DRAMs

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0318 ◽

2015 ◽

Author(s):

Ching Shan Sung ◽

Hsiu Ting Lee ◽

Jian Shing Luo

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Tem Analysis ◽

Cross Sectional ◽

Transmission Electron ◽

Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0237 ◽

1997 ◽

Author(s):

K. Doong ◽

J.-M. Fu ◽

Y.-C. Huang

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor ◽

Specimen Preparation ◽

Preparation Technique ◽

Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0313 ◽

2002 ◽

Author(s):

Chin Kai Liu ◽

Chi Jen. Chen ◽

Jeh Yan.Chiou ◽

David Su

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Specimen Preparation ◽

Tem Analysis ◽

Sensitive Issue ◽

Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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