Output Characteristics of Pulsed and Continuous-Wave-Excited Quantum-Dot Microcavity Lasers

2008 ◽  
Vol 101 (6) ◽  
Author(s):  
Christopher Gies ◽  
Jan Wiersig ◽  
Frank Jahnke
Keyword(s):  
Quantum Dot ◽  
Continuous Wave ◽  
Microcavity Lasers ◽  
Output Characteristics

Mechanism of microlens formation in quantum dot glasses under continuous-wave laser irradiation

2001 ◽  
Vol 89 (12) ◽  
pp. 8273-8278 ◽  
Author(s):  
Yuri Kaganovskii ◽  
Irena Antonov ◽  
Fredrick Bass ◽  
Michael Rosenbluh ◽  
Audrey Lipovskii
Keyword(s):  
Quantum Dot ◽  
Laser Irradiation ◽  
Continuous Wave ◽  
Continuous Wave Laser ◽  
Wave Laser

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Continuous Wave Operation

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

1999 ◽  
Vol 11 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
Yu.M. Shernyakov ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diode Laser ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Long Wavelength ◽  
Continuous Wave Operation

Simulation of single-junction GaAs photovoltaic cell output characteristics by continuous wave laser irradiation

2017 ◽  
Vol 46 (10) ◽  
pp. 1003006
Author(s):  
孙 浩 Sun Hao ◽  
周大勇 Zhou Dayong ◽  
张宏超 Zhang Hongchao ◽  
陆 健 Lu Jian
Keyword(s):  
Laser Irradiation ◽  
Continuous Wave ◽  
Photovoltaic Cell ◽  
Continuous Wave Laser ◽  
Single Junction ◽  
Wave Laser ◽  
Output Characteristics

scholarly journals InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2315
Author(s):  
Alexey E. Zhukov ◽  
Natalia V. Kryzhanovskaya ◽  
Eduard I. Moiseev ◽  
Anna S. Dragunova ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Elevated Temperatures ◽  
Continuous Wave ◽  
Electrical Contact ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Constant Current ◽  
Surface Protection ◽  
Microdisk Lasers

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

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