HMSIW based highly selective filter for radar applications

Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Keyur Mahant ◽  
Hiren K. Mewada ◽  
Amit V. Patel ◽  
Alpesh Vala ◽  
Jitendra Chaudhari

Purpose This paper aims to present, design and implement a novel half-mode substrate integrated waveguide (HMSIW)-based narrow bandpass filter, which offers advantages like low insertion loss, compact size and high selectivity. Proposed filter will be used in the K-band automotive radar application. Design/methodology/approach The filtering response in the proposed design is achieved by inserting inductive posts in the HMSIW cavity. Ansoft high frequency structure Simulator (HFSS) is used for the simulation of the proposed structure, which is a three-dimensional full-wave solver using the finite element method (FEM). The proposed filter is fabricated on the dielectric material RT duroid 5,880 with the dielectric constant ɛr = 2.2, dissipation factor t and = 4 × 10–4 and height h = 0.508 mm. Findings Frequency tuning is also carried out by changing the lateral distance between two inductive posts. Moreover, a comparison of the proposed structure with the previously published work is presented. Proposed method provides the unique advantages such as low insertion loss, high selectivity and compact in size. Originality/value Indigenous method has been used for the development of the filter. Proposed filter will be used in transmitter subsystem of the K-band radar system operating at the center frequency of 11.2 GHz. Measurement results are well-matched with the simulated one. Obtained measured result shows return loss of 20.39 dB and insertion loss of 1.59 dB with 3 dB fractional bandwidth (FBW) of 2.58% at the center frequency of 11.2 GHz.

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 2003
Author(s):  
Kicheol Yoon ◽  
Kwanggi Kim

A conventional interdigital bandpass filter (BPF) is characterized by coupled and tapped lines and affords low insertion loss (IL) and easy fractional bandwidth (FBW) adjustment. However, the maximum FBW of the filter is limited to 30%, beyond that, its gap size increases, thereby rendering filter fabrication impractical on a standard printed circuit board. In addition, the filter size cannot be changed because it dictates the operational frequency of the filter. Hence, in this study, we propose a compact interdigital BPF based on a spiral and folded stepped impedance resonator (SIR), which affords low IL and excellent group delay. The spiral, folded structure facilitates drastic FBW adjustment: the center frequency and adjustable range of the FBW of the designed BPF are 800 MHz and 80 to 180%, respectively. Additionally, the proposed BPF can adjust the FBW by k-factor which can adjust from 80 to 180%. The insertion and return losses of the proposed filter are 0.043 dB and 17.1 dB, respectively, and the group delay is 0.098 ns. The total filter size is only 13.8 mm × 5.98 mm, which corresponds to a size reduction by factors of >2/8 relative to a conventional filter and 2.1 relative to the latest BPF design. The group delay difference between the BPF and other filters is 0.15 ns. In addition, the range of adjustable FBW for the filter is 1.36 times different than for other filters.


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Karthie S. ◽  
Zuvairiya Parveen J. ◽  
Yogeshwari D. ◽  
Venkadeshwari E.

Purpose The purpose of this paper is to present the design of a compact microstrip bandpass filter (BPF) in dual-mode configuration loaded with cross-loop and square ring slots on a square patch resonator for C-band applications. Design/methodology/approach In the proposed design, the dual-mode response for the filter is realized with two transmission zeros (TZs) by the insertion of a perturbation element at the diagonal corner of the square patch resonator with orthogonal feed lines. Such TZs at the edges of the passband result in better selectivity for the proposed BPF. Moreover, the cross-loop and square ring slots are etched on a square patch resonator to obtain a miniaturized BPF. Findings The proposed dual-mode microstrip filter fabricated in RT/duroid 6010 substrate using PCB technology has a measured minimum insertion loss of 1.8 dB and return loss better than 24.5 dB with a fractional bandwidth (FBW) of 6.9%. A compact size of 7.35 × 7.35 mm2 is achieved for the slotted patch resonator-based dual-mode BPF at the center frequency of 4.76 GHz. As compared with the conventional square patch resonator, a size reduction of 61% is achieved with the proposed slotted design. The feasibility of the filter design is confirmed by the good agreement between the measured and simulated responses. The performance of the proposed filter structure is compared with other dual-mode filter works. Originality/value In the proposed work, a compact dual-mode BPF is reported with slotted structures. The conventional square patch resonator is deployed with cross-loop and square ring slots to design a dual-mode filter with a square perturbation element at its diagonal corner. The proposed filter exhibits compact size and favorable performance compared to other dual-mode filter works reported in literature. The aforementioned design of the dual-mode BPF at 4.76 GHz is suitable for applications in the lower part of the C-band.


2021 ◽  
Vol 36 (7) ◽  
pp. 865-871
Author(s):  
Jin Shi ◽  
Jiancheng Dong ◽  
Kai Xu ◽  
Lingyan Zhang

A novel miniaturized wideband bandpass filter (BPF) using capacitor-loaded microstrip coupled line is proposed. The capacitors are loaded in parallel and series to the coupled line, which makes the filter just require one one-eighth wavelength coupled line and achieve filtering response with multiple transmission poles (TPs) and transmission zeros (TZs). Compared with the state-of-the-art microstrip wideband BPFs, the proposed filter has the advantages of compact size and simple structure. A prototype centered at 1.47 GHz with the 3-dB fractional bandwidth of 86.5% is demonstrated, which exhibits the compact size of 0.003λ2 g (λg is the guided wavelength at the center frequency) and the minimum insertion loss of 0.37 dB.


2018 ◽  
Vol 38 ◽  
pp. 03039
Author(s):  
Chang Zhou ◽  
Chen Ji ◽  
Gen Ping Wu

A technique for tunable filters with low insertion loss and narrow bandwidth is proposed in the form of comb-line structure. Both resonant capacitor with pin-diodes and resonant inductance in the tunable filter were analyzed and the main source of insertion loss was obtained. A series of filters with same pin-diodes, center frequency, absolute bandwidth and low return loss was simulated. The results showed that, by changing the values of the resonant capacitor and inductance, insertion loss of the filter can be greatly restricted. This technique will allow the design of tunable LC filters with low insertion loss and narrow bandwidth.


Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Sandhya Ramalingam ◽  
Umma Habiba Hyder Ali ◽  
Sharmeela Chenniappan

Purpose This paper aims to design a dual mode X-band substrate integrated waveguide (SIW) bandpass filter in the conventional SIW structure. A pair of back-to-back square and split ring resonator is introduced in the single-layer SIW bandpass filter. The various coupling configurations of SIW bandpass filter using split square ring slot resonator is designed to obtain dual resonant mode in the passband. It is shown that the measured results agree with the simulated results to meet compact size, lower the transmission coefficient, better reflection coefficient, sharp sideband rejection and minimal group delay. Design/methodology/approach A spurious suppression of wideband response is suppressed using an open stub in the transmission line. The width and length of the stub are tuned to suppress the wideband spurs in the stopband. The measured 3 dB bandwidth is from 8.76 to 14.24 GHz with a fractional bandwidth of 48.04% at a center frequency of 11.63 GHz, 12.59 GHz. The structure is analyzed using the equivalent circuit model, and the simulated analysis is based on an advanced design system software. Findings This paper discusses the characteristics of resonator below the waveguide cut-off frequency with their working principles and applications. Considering the difficulties in combining the resonators with a metallic waveguide, a new guided wave structure – the SIW is designed, which is synthesized on a planar substrate with linear periodic arrays of metallized via based on the printed circuit board. Originality/value This study has investigated the wave propagation problem of the SIW loaded by square ring slot-loaded resonator. The electric dipole nature of the resonator has been used to achieve a forward passband in a waveguide environment. The proposed filters have numerous advantages such as high-quality factor, low insertion loss, easy to integrate with the other planar circuits and, most importantly, compact size.


2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Zh. Yao ◽  
C. Wang ◽  
N. Y. Kim

A dual-mode broadband bandpass filter (BPF) with multiple controllable transmission-zeros using T-shaped stub-loaded resonators (TSSLRs) is presented. Due to the symmetrical plane, the odd-even-mode theory can be adopted to characterize the BPF. The proposed filter consists of a dual-mode TSSLR and two modified feed-lines, which introduce two capacitive and inductive source-load (S-L) couplings. Five controllable transmission zeros (TZs) can be achieved for the high selectivity and the wide stopband because of the tunable amount of coupling capacitance and inductance. The center frequency of the proposed BPF is 5.8 GHz, with a 3 dB fraction bandwidth of 8.9%. The measured insertion and return losses are 1.75 and 28.18 dB, respectively. A compact size and second harmonic frequency suppression can be obtained by the proposed BPF with S-L couplings.


2020 ◽  
Vol 20 (1) ◽  
pp. 73-79
Author(s):  
Girdhari Chaudhary ◽  
Yongchae Jeong

This paper presents a design of a transmissive-type, low insertion loss (IL) negative group delay (NGD) circuit with a reconfigurable NGD. The proposed circuit consists of a series transmission lines (TLs) and shunt short-circuited coupled lines where an isolation port is terminated with a parasitic compensated PIN diode. Analytical design equations are derived to obtain the circuit parameters for the predefined NGD and IL. The low IL can be achieved because of the very high characteristic impedance of the short-circuited coupled lines. The TL terminated with a PIN diode is used to achieve the constant center frequency of reconfigurable NGD circuit. For experimental validation, the NGD circuit is designed and fabricated at a center frequency (<i>f</i><sub>0</sub>) of 2.14 GHz. In the measurement, the NGD varies from -0.5 ns to -2 ns with an IL variation of 2.08 to 3.60 dB at <i>f</i><sub>0</sub> = 2.14 GHz. The NGD bandwidth (bandwidth of GD less than 0 ns) varies from 90 MHz to 50 MHz. The minimum input/output return losses are higher than 10 dB for the overall tuning range.


2020 ◽  
Vol 2020 (1) ◽  
pp. 000211-000216
Author(s):  
Tatsushi Hayashi ◽  
Po Yu Lin ◽  
Ryoichi Watanabe ◽  
Seiko Ichikawa

Abstract With IP traffic increasing by 10-fold over the last decade, together with limitation and cost increase due to shrinking semiconductor nodes have led to requiring technological breakthrough in the packaging of semiconductor devices especially those used in high performance computing (HPC).This increase in IP traffic has led to requirement for higher data speed transmission in these devices, and consequently packaging technologies that enable those solutions such as 2.5D packaging utilizing silicon interposers. Furthermore, in recent years, increasing number of dies are placed in a single package for these devices thereby making the size of silicon interposers larger. Thus, the design of organic substrates used in these devices, are also becoming ever complex often with multiple layers with long trace lengths for routing increased number of IOs and allowing for power and signal control management. In order to facilitate the high speed data transmission requirement with longer trace lengths, stable low insertion loss design of organic substrates are becoming significantly important even when devices are exposed at elevated humidity or higher temperatures due to surrounding environment or from dies heating. Additionally, as silicon interposers are increasing in size, preventing stress build-up, which can cause cracking between the interposer and the organic substrate, is also becoming paramount. These requirements have led to innovative materials to be developed to enable organic substrates to have these properties. In this paper, we present a new dielectric build-up material for use in advanced organic substrates, by combining newly developed original resin with existing formulation technology that meet these criteria of enabling lower insertion loss with design that reduces deterioration even at elevated humidity and temperature, and furthermore having high crack resistance during temperature cycle testing.


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