High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Habeeb Mousa ◽  
Kasif Teker
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Field Effect Transistor ◽  
High Electron ◽  
Si Substrate ◽  
Content Type ◽  
Nitrogen Doped ◽  
Sic Nanowires ◽  
Effect Transistor ◽  
High Transconductance

Purpose The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties. Design/methodology/approach The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO2/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO2 layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C. Findings The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures. Originality/value High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

Design and manufacture of TNT explosives detector sensors based on GFET

Sensor Review ◽  
2018 ◽  
Vol 38 (2) ◽  
pp. 181-193 ◽  
Author(s):  
Saeid Masoumi ◽  
Hassan Hajghassem ◽  
Alireza Erfanian ◽  
Ahmad Molaei Rad
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantitative Detection ◽  
High Electron ◽  
Detection Range ◽  
Content Type ◽  
Investigation Methods ◽  
Effect Transistor ◽  
Design And Manufacture

Purpose Smart sensors based on graphene field effect transistor (GFET) and biological receptors are regarded as a promising nanomaterial that could be the basis for future generation of low-power, faster, selective real-time monitoring of target analytes and smaller electronics. So, the purpose of this paper is to provide details of sensors based on selective nanocoatings by combining trinitrotoluene (TNT) receptors (Trp-His-Trp) bound to conjugated polydiacetylene polymers on a graphene channel in GFET for detecting explosives TNT. Design/methodology/approach Following an introduction, this paper describes the way of manufacturing of the GFET sensor by using investigation methods for transferring graphene sheet from Cu foil to target substrates, which is functionalized by the TNT peptide receptors, to offer a system which has the capability of answering the presence of related target molecules (TNT). Finally, brief conclusions are drawn. Findings In a word, shortly after graphene discovery, it has been explored with a variety of methods gradually. Because of its exceptional electrical properties (e.g. extremely high carrier mobility and capacity), electrochemical properties such as high electron transfer rate and structural properties, graphene has already showed great potential and success in chemical and biological sensing fields. Therefore, the authors used a biological receptor with a field effect transistor (FET) based on graphene to fabricate sensor for achieving high sensitivity and selectivity that can detect explosive substances such as TNT. The transport property changed compared to that of the FET made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in TNT, and the results show the bipolar property change of GFET with the TNT concentration and the possibility to develop a robust, easy-to-use and low-cost TNT detection method for performing a sensitive, reliable and semi-quantitative detection in a wide detection range. Originality/value In this timeframe of history, TNT is a common explosive used in both military and industrial settings. Its convenient handling properties and explosive strength make it a common choice in military operations and bioterrorism. TNT and other conventional explosives are the mainstays of terrorist bombs and the anti-personnel mines that kill or injure more than 15,000 people annually in war-torn countries. In large, open-air environments, such as airports, train stations and minefields, concentrations of these explosives can be vanishingly small – a few parts of TNT, for instance, per trillion parts of air. That can make it impossible for conventional bomb and mine detectors to detect the explosives and save lives. So, in this paper, the authors report a potential solution with design and manufacture of a GFET sensor based on a biological receptor for real-time detection of TNT explosives specifically.

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type

scholarly journals Insights into the Maturation of Pernisine, a Subtilisin-Like Protease from the Hyperthermophilic Archaeon Aeropyrum pernix

2020 ◽  
Vol 86 (17) ◽  
Author(s):  
Miha Bahun ◽  
Marko Šnajder ◽  
Dušan Turk ◽  
Nataša Poklar Ulrih
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Catalytic Domain ◽  
Industrial Applications ◽  
Binding Motif ◽  
Content Type ◽  
Hyperthermophilic Archaeon ◽  
Aeropyrum Pernix ◽  
Autocatalytic Process ◽  
Exceptional Stability

ABSTRACT Pernisine is a subtilisin-like protease that was originally identified in the hyperthermophilic archaeon Aeropyrum pernix, which lives in extreme marine environments. Pernisine shows exceptional stability and activity due to the high-temperature conditions experienced by A. pernix. Pernisine is of interest for industrial purposes, as it is one of the few proteases that has demonstrated prion-degrading activity. Like other extracellular subtilisins, pernisine is synthesized in its inactive pro-form (pro-pernisine), which needs to undergo maturation to become proteolytically active. The maturation processes of mesophilic subtilisins have been investigated in detail; however, less is known about the maturation of their thermophilic homologs, such as pernisine. Here, we show that the structure of pro-pernisine is disordered in the absence of Ca2+ ions. In contrast to the mesophilic subtilisins, pro-pernisine requires Ca2+ ions to adopt the conformation suitable for its subsequent maturation. In addition to several Ca2+-binding sites that have been conserved from the thermostable Tk-subtilisin, pernisine has an additional insertion sequence with a Ca2+-binding motif. We demonstrate the importance of this insertion for efficient folding and stabilization of pernisine during its maturation. Moreover, analysis of the pernisine propeptide explains the high-temperature requirement for pro-pernisine maturation. Of note, the propeptide inhibits the pernisine catalytic domain more potently at high temperatures. After dissociation, the propeptide is destabilized at high temperatures only, which leads to its degradation and finally to pernisine activation. Our data provide new insights into and understanding of the thermostable subtilisin autoactivation mechanism. IMPORTANCE Enzymes from thermophilic organisms are of particular importance for use in industrial applications, due to their exceptional stability and activity. Pernisine, from the hyperthermophilic archaeon Aeropyrum pernix, is a proteolytic enzyme that can degrade infective prion proteins and thus has a potential use for disinfection of prion-contaminated surfaces. Like other subtilisin-like proteases, pernisine needs to mature through an autocatalytic process to become an active protease. In the present study, we address the maturation of pernisine and show that the process is regulated specifically at high temperatures by the propeptide. Furthermore, we demonstrate the importance of a unique Ca2+-binding insertion for stabilization of mature pernisine. Our results provide a novel understanding of thermostable subtilisin autoactivation, which might advance the development of these enzymes for commercial use.

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

2003 ◽  
Vol 216 (1-4) ◽  
pp. 483-489 ◽  
Author(s):  
Yoko Yokoyama ◽  
Xueqing Li ◽  
Kuang Sheng ◽  
Andrei Mihaila ◽  
Tanija Traikovic ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cvd Diamond ◽  
Power Device ◽  
Nitrogen Doped ◽  
Device Applications ◽  
Effect Transistor

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽  
2022 ◽  
Vol 19 (8) ◽  
pp. 81-86
Author(s):  
I. Yu. Lovshenko ◽  
A. Yu. Voronov ◽  
P. S. Roshchenko ◽  
R. E. Ternov ◽  
Ya. D. Galkin ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Energy ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Proton Flux ◽  
High Electron ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Dual Channel ◽  
Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications

2016 ◽  
Vol 13 (2) ◽  
pp. 39-50 ◽  
Author(s):  
Zheng Chen ◽  
Yiying Yao ◽  
Wenli Zhang ◽  
Dushan Boroyevich ◽  
Khai Ngo ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Operating Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Packaging Materials ◽  
Temperature Capability ◽  
Effect Transistor

This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

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