High temperature stable GHz-range low-loss wide band transducers and filter using SiO/sub 2//LiNbO/sub 3/, LiTaO/sub 3/

1995 ◽  
Vol 42 (3) ◽  
pp. 392-396 ◽  
Author(s):  
K. Yamanouchi ◽  
H. Satoh ◽  
T. Meguro ◽  
Y. Wagatsuma
Keyword(s):  
High Temperature ◽  
Wide Band ◽  
Low Loss

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

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