scholarly journals Output voltage and efficiency of novelty architecture of charge pump versus clock frequency and MOSFETs sizes

2016 ◽  
Author(s):  
David Matousek ◽  
Jiri Hospodka ◽  
Ondrej Subrt
Keyword(s):  
Output Voltage ◽  
Charge Pump ◽  
Clock Frequency

Fast-Transient-Response Low-Voltage Integrated, Interleaved DC–DC Converter for Implantable Devices

2019 ◽  
Vol 29 (01) ◽  
pp. 2050013
Author(s):  
Najmeh Cheraghi Shirazi ◽  
Abumoslem Jannesari ◽  
Pooya Torkzadeh
Keyword(s):  
Power Consumption ◽  
Transient Response ◽  
Output Voltage ◽  
Low Voltage ◽  
Charge Pump ◽  
Input Voltage ◽  
Cmos Technology ◽  
Clock Frequency ◽  
Voltage Ripple ◽  
Body Biasing

A new self-start-up switched-capacitor charge pump is proposed for low-power, low-voltage and battery-less implantable applications. To minimize output voltage ripple and improve transient response, interleaving regulation technique is applied to a multi-stage Cross-Coupled Charge Pump (CCCP) circuit. It splits the power flow in a time-sequenced manner. Three cases of study are designed and investigated with body-biasing technique by auxiliary transistors: Four-stage Two-Branch CCCP (TBCCCP), the two-cell four-stage Interleaved Two-Branch CCCP (ITBCCCP2) and four-cell four-stage Interleaved Two-Branch CCCP (ITBCCCP4). Multi-phase nonoverlap clock generator circuit with body-biasing technique is also proposed which can operate at voltages as low as CCCP circuits. The proposed circuits are designed with input voltage as low as 300 to 400[Formula: see text]mV and 20[Formula: see text]MHz clock frequency for 1[Formula: see text]pF load capacitance. Among the three designs, ITBCCCP4 has the lowest ramp-up time (41.6% faster), output voltage ripple (29% less) and power consumption (19% less). The Figure-Of-Merit (FOM) of ITBCCCP4 is the highest value among two others. For 400[Formula: see text]mV input voltage, ITBCCCP4 has a 98.3% pumping efficiency within 11.6[Formula: see text][Formula: see text]s, while having a maximum voltage ripple of 0.1% and a power consumption as low as 2.7[Formula: see text]nW. The FOM is 0.66 for this circuit. The designed circuits are implemented in 180-nm standard CMOS technology with an effective chip area of [Formula: see text][Formula: see text][Formula: see text]m for TBCCCP, [Formula: see text][Formula: see text][Formula: see text]m for ITBCCCP2 and [Formula: see text][Formula: see text][Formula: see text]m for ITBCCCP4.

scholarly journals Efficiency of Innovative Charge Pump versus Clock Frequency and MOSFETs Sizes

2016 ◽  
Vol 16 (5) ◽  
pp. 260-265 ◽  
Author(s):  
David Matoušek ◽  
Jiří Hospodka ◽  
Ondřej Šubrt
Keyword(s):  
Output Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Specific Power ◽  
Pump Efficiency ◽  
Clock Frequency ◽  
Output Current ◽  
Charge Pumps ◽  
Complex Optimization ◽  
Charge Pump Circuit

Abstract Charge pumps are circuits that produce the voltage higher than supply voltage or negative voltage. Today, charge pumps became an integral part of the electronic equipment. The integration of charge pumps directly into the system allows manufacturers to feed a complex system with many specific power requirements from a single source. However, charge pump efficiency is reduced by many phenomena. This paper is focused on the question of efficiency of proposed variant of the charge pump. In this article, the efficiency dependence on a number of stages, output current, clock frequency and MOSFETs sizes was simulated by Eldo. The aim of this study is to determine the MOSFETs sizes and theirs influence to efficiency and the output voltage. Complex optimization of the charge pump circuit will follow in further text.

A 50 mV Fully-Integrated Self-Startup Circuit for Thermal Energy Harvesting

2017 ◽  
Vol 26 (12) ◽  
pp. 1750196 ◽  
Author(s):  
Yanzhao Ma ◽  
Yinghui Zou ◽  
Shengbing Zhang ◽  
Xiaoya Fan
Keyword(s):  
Energy Harvesting ◽  
Thermal Energy ◽  
Output Voltage ◽  
Charge Pump ◽  
Input Voltage ◽  
Fully Integrated ◽  
Input Capacitance ◽  
Low Input ◽  
Lc Oscillator ◽  
Thermal Energy Harvesting

A fully-integrated self-startup circuit with ultra-low voltage for thermal energy harvesting is presented in this paper. The converter is composed of an enhanced swing LC oscillator and a charge pump with decreased equivalent input capacitance. The LC oscillator has ultra-low input voltage and high output voltage swing, and the charge pump has a fast charging speed and small equivalent input capacitance. This circuit is designed with 0.18[Formula: see text][Formula: see text]m standard CMOS process. The simulation results show that the output voltage is in the range of 0.14[Formula: see text]V and 2.97[Formula: see text]V when the input voltage is changed from 50[Formula: see text]mV to 150[Formula: see text]mV. The output voltage could reach 2.87[Formula: see text]V at the input voltage of 150[Formula: see text]mV and the load of 1[Formula: see text]M[Formula: see text]. The maximum efficiency is in the range of 10.0% and 14.8% when the input voltage is changed from 0.2[Formula: see text]V to 0.4[Formula: see text]V. The circuit is suitable for thermoelectric energy harvesting to start with ultra-low input voltage.

scholarly journals A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4149
Author(s):  
Xiang Li ◽  
Rui Li ◽  
Chunge Ju ◽  
Bo Hou ◽  
Qi Wei ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Voltage ◽  
Output Voltage ◽  
Charge Pump ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Temperature Changes ◽  
Adjustable Range

Micromachined gyroscopes require high voltage (HV) for actuation and detection to improve its precision, but the deviation of the HV caused by temperature fluctuations will degrade the sensor’s performance. In this paper, a high-voltage temperature-insensitive charge pump is proposed. Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. By controlling the pumping clock’s amplitude continuously, closed-loop regulation is realized to reduce the output voltage’s sensitivity to temperature changes. Besides, the output level is programmable linearly in a large range by changing the reference voltage. The whole circuit has been fabricated in a 0.18- μ m standard CMOS (complementary metal-oxide-semiconductor) process with a total area of 2.53 mm 2 . Measurements indicate that its output voltage has a linear adjustable range from around 13 V to 16.95 V, and temperature tests show that the maximum variations of the output voltage at − 40 ∼ 80 ∘ C are less than 1.1%.

scholarly journals New Discrete Fibonacci Charge Pump Design, Evaluation and Measurement

2017 ◽  
Vol 17 (3) ◽  
pp. 100-107 ◽  
Author(s):  
David Matoušek ◽  
Jiří Hospodka ◽  
Ondřej Šubrt
Keyword(s):  
Printed Circuit Board ◽  
Charge Pump ◽  
Circuit Board ◽  
Design Evaluation ◽  
Clock Frequency ◽  
Pump Design ◽  
Charge Pumps ◽  
Printed Circuit ◽  
Variable Power ◽  
Charge Pump Circuit

AbstractThis paper focuses on the practical aspects of the realisation of Dickson and Fibonacci charge pumps. Standard Dickson charge pump circuit solution and new Fibonacci charge pump implementation are compared. Both charge pumps were designed and then evaluated by LTspice XVII simulations and realised in a discrete form on printed circuit board (PCB). Finally, the key parameters as the output voltage, efficiency, rise time, variable power supply and clock frequency effects were measured.

Frequency Stabilization and EMI Noise Reduction of COT Method Ripple-Controlled Switching Converters with Output Voltage Ripple Cancellation

2020 ◽  
Vol 38 ◽  
pp. 130-142
Author(s):  
Yasunori Kobori ◽  
Yi Fei Sun ◽  
Minh Tri Tran ◽  
Anna Kuwana ◽  
Haruo Kobayashi
Keyword(s):  
Pulse Width ◽  
Output Voltage ◽  
Peak Level ◽  
Operating Frequency ◽  
Duty Ratio ◽  
Switching Converters ◽  
Clock Frequency ◽  
Voltage Ripple ◽  
Ripple Cancellation ◽  
Emi Reduction

This paper proposes a new EMI reduction and automatic ripple cancellation technique about the ripple-controlled converter with the ripple injection and Constant-On Time (COT) method. The ripple-controlled converters have no stable clock and it is difficult to reduce the EMI noise by shaking the operating frequency. The new method of EMI reduction is that the COT pulse width is modulated by the triangular signal so that the operating frequency is modulated and the spectrum peak level of the clock frequency is greatly reduced. But the output voltage ripple is much increased because of the change of the duty ratio of the operating frequency. The increaced ripple is canceled by adding the modulation signal to the ripple injection circuit. Moreover stabiliztion of the operating frequency on Discontinuous Conduction Mode (DCM) is reported. The operating frequency falls down on DCM mode in the COT converters. To stabilize the operating frequency, cheking the operating period is fedback to control the COT pulse width

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