A subthreshold MOSFET bandgap reference with ultra-low power supply voltage

<em>In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm standard CMOS technology with 1 V power supply voltage. Simulation results show that FGSLEEPY LECTOR SRAM cell consumes very low power and achieves high stability compared to conventional FGSRAM Cell</em>

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A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.503.12 ◽

2012 ◽

Vol 503 ◽

pp. 12-17

Author(s):

Qiang Li ◽

Xiao Yun Tan ◽

Guan Shi Wang

Keyword(s):

Power Supply ◽

Supply Voltage ◽

Cmos Technology ◽

Bandgap Reference ◽

Voltage Reference ◽

Temperature Dependent ◽

Power Supply Voltage ◽

Gyroscope System ◽

Bandgap Voltage Reference ◽

Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

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A 0.6 V MOS-Only Voltage Reference for Biomedical Applications with 40 ppm/∘C Temperature Drift

Journal of Circuits System and Computers ◽

10.1142/s0218126618501281 ◽

2018 ◽

Vol 27 (08) ◽

pp. 1850128 ◽

Cited By ~ 14

Author(s):

R. Nagulapalli ◽

K. Hayatleh ◽

Steve Barker ◽

Sumathi Raparthy ◽

Nabil Yassine ◽

...

Keyword(s):

Power Supply ◽

Biomedical Applications ◽

Low Voltage ◽

Supply Voltage ◽

Absolute Temperature ◽

Voltage Reference ◽

Mos Transistors ◽

Power Supply Voltage ◽

Temperature Drift ◽

Ultra Low Power

This paper exploits the CMOS beta multiplier circuit to synthesize a temperature-independent voltage reference suitable for low voltage and ultra-low power biomedical applications. The technique presented here uses only MOS transistors to generate Proportional To Absolute Temperature (PTAT) and Complimentary To Absolute Temperature (CTAT) currents. A self-biasing technique has been used to minimize the temperature and power supply dependency. A prototype in 65[Formula: see text]nm CMOS has been developed and occupies 0.0039[Formula: see text]mm2, and at room temperature, it generates a 204[Formula: see text]mV reference voltage with 1.3[Formula: see text]mV drift over a wide temperature range (from [Formula: see text]40[Formula: see text]C to 125[Formula: see text]C). This has been designed to operate with a power supply voltage down to 0.6[Formula: see text]V and consumes 1.8[Formula: see text]uA current from the supply. The simulated temperature coefficient is 40[Formula: see text]ppm/[Formula: see text]C.

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