Dynamic Properties Of Ultra Low-Voltage Rail-to-Rail Comparator Designed In 130 nm CMOS Technology

2020 ◽  
Author(s):  
Lukas Nagy ◽  
Daniel Arbet ◽  
Martin Kovac ◽  
Miroslav Potocny ◽  
Michal Sovcik ◽  
...  
Keyword(s):  
Low Voltage ◽  
Dynamic Properties ◽  
Cmos Technology ◽  
Rail To Rail

New Schmitt Trigger with Controllable Hysteresis using Dual Control Gate-Floating Gate Transistor (DCG-FGT)

2013 ◽  
Vol 2 (1) ◽  
pp. 49
Author(s):  
Abderrezak Marzaki ◽  
V. Bidal ◽  
R. Laffont ◽  
W. Rahajandraibe ◽  
J-M. Portal ◽  
...  
Keyword(s):  
Low Voltage ◽  
Schmitt Trigger ◽  
Cmos Technology ◽  
Floating Gate ◽  
Dual Control ◽  
Switching Voltage ◽  
Voltage Range ◽  
Rail To Rail ◽  
Floating Gate Transistor ◽  
Simulation Results

This paper presents different low voltage adjustable CMOS Schmitt trigger using DCG-FGT transistor. Simple circuits are introduced to provide flexibility to program the hysteresic threshold in this paper. The hysteresis can be controlled accurately at a large voltage range. The proposed Schmitt trigger have been designed using 90nm 1.2V CMOS technology and simulated using Eldo with PSP device models. The simulation results show rail-to-rail operation and adjustable switching voltages <em>V<sub>TH- </sub></em>(low switching voltage) and <em>V<sub>TH+ </sub></em>(high switching voltage).

scholarly journals A 2.5 Gbps, 10-Lane, Low-Power, LVDS Transceiver in 28 nm CMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 350 ◽  
Author(s):  
Xu Bai ◽  
Jianzhong Zhao ◽  
Shi Zuo ◽  
Yumei Zhou
Keyword(s):  
Low Power ◽  
High Speed ◽  
Low Voltage ◽  
Cmos Technology ◽  
Common Mode ◽  
Serial Interface ◽  
Common Mode Voltage ◽  
Rail To Rail ◽  
The Common ◽  
28 Nm

This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS) transceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge output driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated common mode voltage over process, voltage and temperature (PVT) variations. The receiver was composed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common mode voltage shifter with an error amplifier shifted the common mode voltage of the input signal to the required range, thereby the following rail-to-rail comparator obtained the maximum transconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology, and had an area of 1.46 mm2. The measured results showed that the output swing of the transmitter was around 350 mV, with a root-mean-square (RMS) jitter of 3.65 [email protected] Gbps, and the power consumption of each lane was 16.51 mW under a 1.8 V power supply.

scholarly journals A New Rail-to-Rail Second Generation Voltage Conveyor

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1292 ◽  
Author(s):  
Barile ◽  
Stornelli ◽  
Ferri ◽  
Safari ◽  
D’Amico
Keyword(s):  
Second Generation ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Total Power ◽  
Voltage Range ◽  
Class Ab ◽  
Rail To Rail ◽  
Total Power Consumption ◽  
Voltage Swing

In this paper, a novel low voltage low power CMOS second generation voltage conveyor (VCII) with an improved voltage range at both the X and Z terminals is presented. The proposed VCII is formed by a current buffer based on a class AB regulated common-gate stage and a modified rail-to-rail voltage buffer. Spice simulation results using LFoundry 0.15 μm low-Vth CMOS technology with a ±0.9 V supply voltage are provided to demonstrate the validity of the designed circuit. Thanks to the class AB behavior, from a bias current of 10 µA, the proposed VCII is capable of driving 0.5 mA on the X terminal, with a total power consumption of 120 µW. The allowed voltage swing on the Z terminal is at least equal to ±0.83 V, while on the X terminals it is ±0.72 V. Both DC and AC voltage and current gains are provided, and time domain simulations, where the voltage conveyor is used as a transimpedance amplifier (TIA), are also presented. A final table that summarizes the main features of the circuit, comparing them with the literature, is also given.

ADDRESSING MEMORY EFFECT FOR RAIL-TO-RAIL COMPARATOR WITH NEAR-THRESHOLD SUPPLY VOLTAGE

2013 ◽  
Vol 22 (06) ◽  
pp. 1350048 ◽  
Author(s):  
SARAVANAN RAMAMOORTHY ◽  
HAIBO WANG
Keyword(s):  
Memory Effect ◽  
Threshold Voltage ◽  
Power Supply ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Design Modification ◽  
Offset Voltage ◽  
Rail To Rail ◽  
Near Threshold

Ultra-low voltage comparators with rail-to-rail input ranges are critical components in the design of low-voltage low-power analog to digital converters (ADCs). This paper investigates the memory effect of a commonly used comparator when its power supply is scaled down to near transistor threshold voltage levels. It also studies when such memory effects are most likely to occur during the conversion sequences of successive approximation register (SAR) ADCs. Subsequently an improved comparator design is presented to overcome the memory effect with near-threshold voltage power supply. The impacts of the proposed design modification on comparator speed, offset voltage and power consumptions are discussed. Based on a 0.13 μm CMOS technology and with a 0.5 V power supply, the proposed comparator is compared with the original comparator in terms of memory effect, speed, power consumption and input offset voltage. The integral and differential nonlinearity (INL and DNL) of 10-bit SAR ADCs with using the proposed and original comparators are also compared.

Performance Analysis Of Ultra Low-Voltage Rail-to-Rail Comparator In 130 nm CMOS Technology

2019 ◽  
Author(s):  
Lukas Nagy ◽  
Daniel Arbet ◽  
Martin Kovac ◽  
Miroslav Potocny ◽  
Michal Sovcik ◽  
...  
Keyword(s):  
Performance Analysis ◽  
Low Voltage ◽  
Cmos Technology ◽  
Rail To Rail

scholarly journals A 4-μW 0.8-V Rail-to-Rail Input/Output CMOS Fully Differential OpAmp

1970 ◽  
pp. 22
Author(s):  
M.R. Valero ◽  
S. Celma ◽  
N. Medrano
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Cmos Technology ◽  
Open Loop ◽  
Threshold Region ◽  
Input Output ◽  
Output Stage ◽  
Common Mode ◽  
Ultra Low Power ◽  
Rail To Rail

This paper presents an ultra low power rail-to-rail input/output operational amplifier (OpAmp) designed in a low cost 0.18 μm CMOS technology. In this OpAmp, rail-to-rail input operation is enabled by using complementary input pairs with gm control. To maximize the output swing a rail-to-rail output stage is employed. For low-voltage low-power operation, the operating transistors in the input and output stage are biased in the sub-threshold region. The simulated DC open loop gain is 51 dB, and the slew-rate is 0.04 V/μs with a 10 pF capacitive load connected to each of the amplifier outputs. For the same load, the simulated unity gain frequency is 131 kHz with a 64º phase margin. A common-mode feed-forward circuit (CMFF) increases CMRR, reducing drastically the variations in the output common mode voltage and keeping the DC gain almost constant. In fact, their relative error remains below 1.2 % for a (-20ºC, +120ºC) temperature span. In addition, the proposed OpAmp is very simple and consumes only 4 μW at 0.8 V supply.

scholarly journals 1.0 V-0.18 µm CMOS Tunable Low Pass Filters with 73 dB DR for On-Chip Sensing Acquisition Systems

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 563
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Dynamic Range ◽  
Low Voltage ◽  
Cutoff Frequency ◽  
Cmos Technology ◽  
Active Area ◽  
Current Steering ◽  
Low Pass ◽  
On Chip ◽  
Low Pass Filters

This paper presents a new approach based on the use of a Current Steering (CS) technique for the design of fully integrated Gm–C Low Pass Filters (LPF) with sub-Hz to kHz tunable cut-off frequencies and an enhanced power-area-dynamic range trade-off. The proposed approach has been experimentally validated by two different first-order single-ended LPFs designed in a 0.18 µm CMOS technology powered by a 1.0 V single supply: a folded-OTA based LPF and a mirrored-OTA based LPF. The first one exhibits a constant power consumption of 180 nW at 100 nA bias current with an active area of 0.00135 mm2 and a tunable cutoff frequency that spans over 4 orders of magnitude (~100 mHz–152 Hz @ CL = 50 pF) preserving dynamic figures greater than 78 dB. The second one exhibits a power consumption of 1.75 µW at 500 nA with an active area of 0.0137 mm2 and a tunable cutoff frequency that spans over 5 orders of magnitude (~80 mHz–~1.2 kHz @ CL = 50 pF) preserving a dynamic range greater than 73 dB. Compared with previously reported filters, this proposal is a competitive solution while satisfying the low-voltage low-power on-chip constraints, becoming a preferable choice for general-purpose reconfigurable front-end sensor interfaces.

scholarly journals Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Orazio Aiello
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Low Voltage ◽  
Current Source ◽  
Building Blocks ◽  
Cmos Technology ◽  
Threshold Region ◽  
Output Current ◽  
Current Generator ◽  
Technology Process

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

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