Simulation of fast room-temperature bonding by mechanical interlock structure applied for 3D integration

2021 ◽  
Author(s):  
Ziyu Liu ◽  
Yaomin Gong ◽  
Lin Chen ◽  
Qingqing Sun ◽  
Wei Zhang
Keyword(s):  
Room Temperature ◽  
3D Integration ◽  
Interlock Structure

RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION

2012 ◽  
Vol 11 (04) ◽  
pp. 1240024 ◽  
Author(s):  
N. JOUVET ◽  
M. A. BOUNOUAR ◽  
S. ECOFFEY ◽  
C. NAUENHEIM ◽  
A. BEAUMONT ◽  
...  
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Atomic Layer ◽  
Cmos Process ◽  
3D Integration ◽  
Simulation Tools ◽  
Layer Deposition ◽  
Recent Developments ◽  
Sram Memory ◽  
Electrical Characterizations

This work presents a nanodamascene process for a CMOS back-end-of-line fabrication of metallic single electron transistor(SET), together with the use of simulation tools for the development of a SET SRAM memory cell. We show room temperature electrical characterizations of SETs fabricated on CMOS with relaxed dimensions, and simulations of a SET SRAM memory cell. Using their physical characteristics achievable through the use of atomic layer deposition, it will be demonstrated that it has the potential to operate at temperature up to 398 K, and that power consumption is less than that of equivalent circuit in advanced CMOS technologies. In order to take advantage of both low power SETs and high CMOS drive efficiency, a hybrid 3D SET CMOS circuit is proposed.

Through-Silicon via Interconnection for 3D Integration Using Room-Temperature Bonding

2009 ◽  
Vol 32 (4) ◽  
pp. 746-753 ◽  
Author(s):  
N. Tanaka ◽  
Y. Yoshimura ◽  
M. Kawashita ◽  
T. Uematsu ◽  
C. Miyazaki ◽  
...  
Keyword(s):  
Room Temperature ◽  
3D Integration ◽  
Through Silicon Via

(ECS Meeting PRiME 2020) High TEC copper to connect copper bond pads for low temperature wafer bonding

2020 ◽  
Author(s):  
Anh Van Nhat Tran ◽  
Kazuo Kondo ◽  
Tetsuji Hirato
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Three Dimensional ◽  
Copper Surface ◽  
Bonding Process ◽  
3D Integration ◽  
High Thermal Expansion ◽  
Lower Temperature ◽  
Bond Pads ◽  
High Thermal Expansion Coefficient

Copper to copper wafer hybrid bonding is the most promising technology for three-dimensional (3D) integration. In the hybrid bonding process, two silicon wafers are aligned and contacted. At room temperature, these aligned copper pads contain radial-shaped nanometer-sized hollows due to the dishing effect induced by chemical-mechanical polishing (CMP). These wafers are annealed for copper to expand and connect upper and lower pads. This copper expansion is key to eliminate the radial-shaped hollows and make copper pads contacted. Therefore, in this research, we investigated the new high thermal expansion coefficient (TEC) electrodeposited copper to eliminate dishing hollows at lower temperature than that with conventional copper using the combination of new additive A and three other additives. The TEC of new electrodeposited copper is 25.2 x 10-6 oC-1, 46% higher than conventional copper and the calculated contact area of copper surface at 250oC with 5 nm dishing depth is 100%.

Room Temperature Debonding - An Enabling Technology for TSV and 3D Integration

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001755-001782
Author(s):  
Thorsten Matthias ◽  
Eric Pabo ◽  
Juergen Burggraf ◽  
Daniel Burgstaller ◽  
Markus Wimplinger ◽  
...  
Keyword(s):  
Room Temperature ◽  
New Technology ◽  
3D Integration ◽  
Adhesive Properties ◽  
Thermally Induced ◽  
Processing Cost ◽  
Temporary Bonding ◽  
Wafer Processing ◽  
High Yields ◽  
Debonding Process

Thin wafer processing is a critical technology for TSV manufacturing and 3D integration. Thin wafer processing allows to reduce the aspect ratio of the vias, thereby reducing the total processing cost and enables ultra-thin packages for handheld applications. Temporary bonding to a rigid support carrier and debonding after backside processing have been used for thin wafer handling/processing for many years. However, so far all the debonding methods imposed severe limitations on the manufacturability. For light induced debonding the carrier had to be transparent and for solvent based debonding the carrier had to be perforated. For thermally induced debonding, “slide-off debonding” the debonding temperature had to be below the reflow temperature of the solder bumps, which limited the maximal process temperature of the adhesive. In this paper we describe a new debonding method at room temperature. This new technology decouples the debonding process from the adhesive properties, which creates a de facto material independent debonding standard. As the debonding process does not rely on the adhesive properties a major boundary for adhesive engineering has been removed. The debonding method is compatible with bumps or pillars in the bond interface as well as on the backside of the wafer stack. No force is applied on the bumps during debonding which results in very high yields.

Dependence of Intergranular Fracture on Boundary Topography and Cohesion

1973 ◽  
Vol 31 ◽  
pp. 150-151
Author(s):  
J. E. Doherty ◽  
A. F. Giamei ◽  
B. H. Kear ◽  
C. W. Steinke
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Nickel Base Superalloy ◽  
Boundary Shear ◽  
Room Temperature Ductility ◽  
Solid Solution Matrix ◽  
Nickel Base ◽  
Solution Matrix ◽  
Different Levels ◽  
Base Superalloy

Recently we have been investigating a class of nickel-base superalloys which possess substantial room temperature ductility. This improvement in ductility is directly related to improvements in grain boundary strength due to increased boundary cohesion through control of detrimental impurities and improved boundary shear strength by controlled grain boundary micros true tures.For these investigations an experimental nickel-base superalloy was doped with different levels of sulphur impurity. The micros tructure after a heat treatment of 1360°C for 2 hr, 1200°C for 16 hr consists of coherent precipitates of γ’ Ni3(Al,X) in a nickel solid solution matrix.

Hepatocyte Alterations in Guinea Pigs FED Polychlorinated Biphenyls (PCBs), Dibenzodioxins (PCDD), AND DIBENZOFURANS (PCDF)

1982 ◽  
Vol 40 ◽  
pp. 56-57
Author(s):  
J. N. Turner ◽  
D. N. Collins
Keyword(s):  
Guinea Pigs ◽  
Room Temperature ◽  
Dose Group ◽  
Methyl Cellulose ◽  
Uranyl Acetate ◽  
Target Organ ◽  
Office Building ◽  
Lead Citrate ◽  
Control Groups ◽  
Cooling Fluid

A fire involving an electric service transformer and its cooling fluid, a mixture of PCBs and chlorinated benzenes, contaminated an office building with a fine soot. Chemical analysis showed PCDDs and PCDFs including the highly toxic tetra isomers. Guinea pigs were chosen as an experimental animal to test the soot's toxicity because of their sensitivity to these compounds, and the liver was examined because it is a target organ. The soot was suspended in 0.75% methyl cellulose and administered in a single dose by gavage at levels of 1,10,100, and 500mgm soot/kgm body weight. Each dose group was composed of 6 males and 6 females. Control groups included 12 (6 male, 6 female) animals fed activated carbon in methyl cellulose, 6 males fed methyl cellulose, and 16 males and 10 females untreated. The guinea pigs were sacrificed at 42 days by suffocation in CO2. Liver samples were immediately immersed and minced in 2% gluteraldehyde in cacadylate buffer at pH 7.4 and 4°C. After overnight fixation, samples were postfixed in 1% OsO4 in cacodylate for 1 hr at room temperature, embedded in epon, sectioned and stained with uranyl acetate and lead citrate.

Domain Formation in Synthetic Quartz

1971 ◽  
Vol 29 ◽  
pp. 156-157
Author(s):  
Joseph J. Comer
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Domain Formation ◽  
Synthetic Quartz ◽  
Transmission Electron ◽  
Black Spots ◽  
Diffraction Mode ◽  
Domain Boundaries ◽  
Kikuchi Lines ◽  
Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

A Liquid Nitrogen Cooled Stage for STEM

1974 ◽  
Vol 32 ◽  
pp. 444-445
Author(s):  
Louis T. Germinario
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Objective Lens ◽  
Thermal Drift ◽  
Specimen Holder ◽  
Resolution Capability ◽  
Focal Position

A liquid nitrogen stage has been developed for the JEOL JEM-100B electron microscope equipped with a scanning attachment. The design is a modification of the standard JEM-100B SEM specimen holder with specimen cooling to any temperatures In the range ~ 55°K to room temperature. Since the specimen plane is maintained at the ‘high resolution’ focal position of the objective lens and ‘bumping’ and thermal drift la minimized by supercooling the liquid nitrogen, the high resolution capability of the microscope is maintained (Fig.4).

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