Process development of moldable underfill on fine pitch RDL 1st fan-out wafer level package

Author(s):  
Simon Siak Boon Lim ◽  
Mian Zhi Ding ◽  
Ser Choong Chong
2015 ◽  
Vol 2015 (1) ◽  
pp. 000822-000826 ◽  
Author(s):  
Won Kyoung Choi ◽  
Duk Ju Na ◽  
Kyaw Oo Aung ◽  
Andy Yong ◽  
Jaesik Lee ◽  
...  

The market for portable and mobile data access devices connected to a virtual cloud access point is exploding and driving increased functional convergence as well as increased packaging complexity and sophistication. This is creating unprecedented demand for higher input/output (I/O) density, higher bandwidths and low power consumption in smaller package sizes. There are exciting interconnect technologies in wafer level packaging such as eWLB (embedded Wafer Level Ball Grid Array), 2.5D interposers, thin PoP (Package-on-Package) and TSV (Through Silicon Via) interposer solutions to meet these needs. eWLB technologies with the ability to extend the package size beyond the area of the chip are leading the way to the next level of high density, thin packaging capability. eWLB provides a robust packaging platform supporting very dense interconnection and routing of multiple die in very reliable, low profile, low warpage 2.5D and 3D solutions. The use of these embedded eWLB packages in a side-by-side configuration to replace a stacked package configuration is critical to enable a more cost effective mobile market capability. Combining the analog or memory device with digital logic device in a semiconductor package can provide an optimum solution for achieving the best performance in thin, multiple-die integration aimed at very high performance. This paper highlights the rapidly moving trend towards eWLB packaging technologies with ultra fine 2/2μm line width and line spacing and multi-layer RDL. A package design study, process development and optimization, and mechanical characterization will be discussed as well as test vehicle preparation. JEDEC component level reliability test results will also be presented.


2008 ◽  
Vol 48 (4) ◽  
pp. 602-610 ◽  
Author(s):  
Xiaowu Zhang ◽  
Vaidyanathan Kripesh ◽  
T.C. Chai ◽  
Teck Chun Tan ◽  
D. Pinjala

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