Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs

This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.

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Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

2010 Symposium on VLSI Technology ◽

10.1109/vlsit.2010.5556122 ◽

2010 ◽

Cited By ~ 33

Author(s):

F. Andrieu ◽

O. Weber ◽

J. Mazurier ◽

O. Thomas ◽

J-P. Noel ◽

...

Keyword(s):

Low Power ◽

Thin Body ◽

Buried Oxide ◽

Low Leakage ◽

Low Power Cmos ◽

Soi Technology

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Ultra-thin body & buried oxide SOI substrate development and qualification for Fully Depleted SOI device with back bias capability

Solid-State Electronics ◽

10.1016/j.sse.2015.11.008 ◽

2016 ◽

Vol 117 ◽

pp. 2-9 ◽

Cited By ~ 12

Author(s):

Walter Schwarzenbach ◽

Bich-Yen Nguyen ◽

Frederic Allibert ◽

Christophe Girard ◽

Christophe Maleville

Keyword(s):

Thin Body ◽

Fully Depleted ◽

Buried Oxide

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Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v15i1.118 ◽

2020 ◽

Vol 15 (1) ◽

pp. 1-6

Author(s):

Fernando José Costa ◽

Renan Trevisoli Doria ◽

Rodrigo Trevisoli Doria

Keyword(s):

Experimental Data ◽

Ground Plane ◽

Capacitive Coupling ◽

Thin Body ◽

Substrate Effect ◽

Gate Bias ◽

Effect Evaluation ◽

Back Gate ◽

Buried Oxide

The main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to experimental data. Different ground plane (GP) arrangements have been considered in order to enhance the analysis. It has been shown that the substrate effect is strongly influenced by the reduction of the back gate bias and, that the capacitive coupling of the structure presents a different behavior with respect of each kind of GP configuration as the back gate bias is varied. Finally, it has been shown that the GP below the source and drain regions contributes significantly to the overall capacitive coupling of the transistors.

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Emulation of double gate transistor in ultra-thin body with thin buried oxide SOI MOSFETs

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics ◽

10.1109/rsm.2013.6706494 ◽

2013 ◽

Cited By ~ 3

Author(s):

M. K. MdArshad ◽

U. Hashim

Keyword(s):

Thin Body ◽

Double Gate ◽

Buried Oxide

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1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation

Radiation Effects and Defects in Solids ◽

10.1080/10420150.2021.2017934 ◽

2022 ◽

pp. 1-13

Author(s):

Ruiqin Zhang ◽

Qiwen Zheng ◽

Wu Lu ◽

Jiangwei Cui ◽

Yudong Li ◽

...

Keyword(s):

Thin Body ◽

Total Ionizing Dose ◽

Buried Oxide ◽

Dose Irradiation

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22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2019.8701740 ◽

2019 ◽

Author(s):

Ousmane M. Kane ◽

Luca Lucci ◽

Pascal Scheiblin ◽

Sylvie Lepilliet ◽

Francois Danneville

Keyword(s):

Thin Body ◽

Noise Performance ◽

Buried Oxide ◽

Rf Noise

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First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation

2012 IEEE International SOI Conference (SOI) ◽

10.1109/soi.2012.6404354 ◽

2012 ◽

Cited By ~ 3

Author(s):

Keiji Ikeda ◽

Yoshihiko Moriyama ◽

Mizuki Ono ◽

Yuuichi Kamimuta ◽

Toshifumi Irisawa ◽

...

Keyword(s):

Low Power ◽

Threshold Voltage ◽

Voltage Control ◽

Thin Body ◽

Back Gate ◽

Buried Oxide ◽

Power Operation

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Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs on Suppression of Short-Channel Effects (SCEs): A Review

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1109.257 ◽

2015 ◽

Vol 1109 ◽

pp. 257-261 ◽

Cited By ~ 1

Author(s):

Noraini Othman ◽

Mohd Khairuddin Md Arshad ◽

Syarifah Norfaezah Sabki ◽

U. Hashim

Keyword(s):

Oxide Thickness ◽

Thin Body ◽

Short Channel Effects ◽

Short Channel ◽

Soi Mosfet ◽

Buried Oxide ◽

Device Structures ◽

Junctionless Transistor ◽

Channel Effects ◽

Silicon Thickness

This paper reviews the different UTBB SOI MOSFET structures and their superiority in suppressing short-channel effects (SCEs). As the gate length (Lg), buried oxide thickness (TBOX) and silicon thickness (Tsi) are scaled down, the severity of SCEs becomes significant. The different UTBB SOI MOSFET device structures introduced to suppress these SCEs are discussed. The effectiveness of these structures in managing the associated SCEs such as drain-induced barrier lowering (DIBL), subthreshold swing (SS) and off-state leakage current (Ioff) is also presented. Further evaluations are made on other competing CMOS technologies such as multigate MOSFETs (FinFETs, three-gates, four-gates) and junctionless transistor in controlling the SCEs.

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