Emulation of double gate transistor in ultra-thin body with thin buried oxide SOI MOSFETs

2013 ◽  
Author(s):  
M. K. MdArshad ◽  
U. Hashim
Keyword(s):  
Thin Body ◽  
Double Gate ◽  
Buried Oxide

Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

2008 ◽  
Vol 17 (8) ◽  
pp. 3077-3082 ◽  
Author(s):  
Luan Su-Zhen ◽  
Liu Hong-Xia
Keyword(s):  
Schottky Barrier ◽  
Compact Model ◽  
Thin Body ◽  
Double Gate

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

2016 ◽  
Vol 117 ◽  
pp. 100-116 ◽  
Author(s):  
Pierre Morin ◽  
Sylvain Maitrejean ◽  
Frederic Allibert ◽  
Emmanuel Augendre ◽  
Qing Liu ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Thin Body ◽  
Fully Depleted ◽  
Buried Oxide ◽  
Silicon On Insulator Technology

Fabrication and Electrical Characterization of Ultra-Thin Body and BOX (UTBB) Back Enhanced SOI (BESOI) pMOSFET

2020 ◽  
Vol 15 (1) ◽  
pp. 1-6
Author(s):  
Ricardo Cardoso Rangel ◽  
Katia R. A. Sasaki ◽  
Leonardo Shimizu Yojo ◽  
João Antonio Martino
Keyword(s):  
First Generation ◽  
Electrical Characterization ◽  
Current Drive ◽  
The Body ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Back Gate ◽  
Buried Oxide ◽  
Complementary Mos Technology

This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.

Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

2006 ◽  
Vol 53 (6) ◽  
pp. 3363-3371 ◽  
Author(s):  
D. Munteanu ◽  
V. Ferlet-Cavrois ◽  
J. L. Autran ◽  
P. Paillet ◽  
J. Baggio ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Quantum Effects ◽  
Heavy Ion ◽  
Thin Body ◽  
Double Gate ◽  
Heavy Ion Irradiation
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