Influence of interface trap charge density on reliability issues of transparent gate recessed channel (TGRC) MOSFET

2017 ◽  
Author(s):  
Ajay Kumar ◽  
M.M. Tripathi ◽  
Rishu Chaujar
Keyword(s):  
Charge Density ◽  
Interface Trap ◽  
Trap Charge ◽  
Recessed Channel

Minimizing Trap Charge Density towards an Ideal Diode in Graphene–Silicon Schottky Solar Cell

2018 ◽  
Vol 11 (1) ◽  
pp. 880-888 ◽  
Author(s):  
Subash Adhikari ◽  
Chandan Biswas ◽  
Manh-Ha Doan ◽  
Sung-Tae Kim ◽  
Chandramouli Kulshreshtha ◽  
...  
Keyword(s):  
Solar Cell ◽  
Charge Density ◽  
Trap Charge ◽  
Ideal Diode

Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter

2021 ◽  
Vol 21 (8) ◽  
pp. 4252-4257
Author(s):  
Tae Jun Ahn ◽  
Yun Seop Yu
Keyword(s):  
Computer Aided Design ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Interface Trap ◽  
Charge Effects ◽  
Trap Charge ◽  
Interlayer Dielectric ◽  
Threshold Voltages ◽  
Propagation Delays ◽  
Aided Design

We investigated the effect of the interface trap charge in a monolithic three-dimensional inverter structure composing of JLFETs (M3DINV-JLFET), using the interface trap charge distribution extracted in the previous study. The effect of interface trap charge was compared with a conventional M3DINV composing of MOSFETs (M3DINV-MOSFETs) by technology computer-aided design simulation. When the interface trap charges in both M3DINV-JLFET and M3DINV-MOSFET are added, the threshold voltages, on-current levels, and subthreshold swings of both JLFETs and MOSFETs increase, decrease, and increase, respectively, and switching voltages and propagation delays of M3DINV are shifted and increased, respectively. However, since JLFET and MOSFET have different current paths of bulk and interface in channel, respectively, MOSFET is more affected by the interface trap, and M3DINV-JLFET has almost less effect of interface trap at different thickness of interlayer dielectric, compared to M3DINV-MOSFET.

scholarly journals A high-sensitive digital photosensor using MOS interface-trap charge pumping

2004 ◽  
Vol 1 (18) ◽  
pp. 556-561
Author(s):  
Akihiro Uehara ◽  
Keiichiro Kagawa ◽  
Takashi Tokuda ◽  
Jun Ohta ◽  
Masahiro Nunoshita
Keyword(s):  
Interface Trap ◽  
Trap Charge ◽  
Charge Pumping

Charge-mixer based on MOS interface-trap charge pump

2006 ◽  
Vol 42 (3) ◽  
pp. 151 ◽  
Author(s):  
N. Massari ◽  
M. Gottardi
Keyword(s):  
Charge Pump ◽  
Interface Trap ◽  
Trap Charge

Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures

2005 ◽  
Vol 902 ◽  
Author(s):  
Lyuba A. Delimova ◽  
I. V. Grekhov ◽  
D. V. Mashovets ◽  
Sangmin Shin ◽  
June-Mo Koo ◽  
...  
Keyword(s):  
Charge Density ◽  
Metal Structure ◽  
Ferroelectric Film ◽  
Schottky Barriers ◽  
Trap Density ◽  
Transient Current ◽  
Interface Traps ◽  
Trap Charge ◽  
External Bias ◽  
Bias Pulse

AbstractA method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on the recharge of interface traps induced by external bias pulse applied to the metal/ferroelectric/metal structure. It is shown that the transient current under bias pulse can be controlled by the traps recharge on the reverse-biased interface. Using the method, the trap charge density on interfaces of MOCVD Pt/PZT/Ir(Ti/SiO2/Si) and Ir/PZT/Ir(Ti/SiO2/Si) capacitors were found from transient current measurements.

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