High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si

2002 ◽  
Author(s):  
J.A. van den Berg ◽  
D.G. Armour ◽  
M. Werner ◽  
S. Whelan ◽  
W. Vandervorst ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Annealing Behaviour ◽  
High Depth

Analysis of High Dose Implanted Silicon by High Depth Resolution Rbs and Spectroscopic Ellipsometry and TEM

1984 ◽  
Vol 35 ◽  
Author(s):  
T. Lohner ◽  
G. Mezey ◽  
M. Fried ◽  
L. GhiţA ◽  
C. Ghiţa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Composite Structures ◽  
Depth Resolution ◽  
High Dose ◽  
Detailed Characterization ◽  
High Depth ◽  
Qualitative Picture

ABSTRACTOne of the applications of high dose ion implantation is to form surface alloys or compound layers. The detailed characterization of such composite structures is of great importance. This paper tries to answer the question: how can we outline, at least, a qualitative picture from the optical properties measured by ellipsometry of high dose Al and Sb implanted silicon. Attempts are done to separate the effect of implanted impurities from the dominant disorder contribution to the measured optical properties. As the ellipsometry does not provide information enough to decide the applicability of optical models therefore methods sensitive to the structure (channeling and TEM) were applied too.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

1996 ◽  
Vol 54 ◽  
pp. 490-491
Author(s):  
P.-F. Staub ◽  
C. Bonnelle ◽  
F. Vergand ◽  
P. Jonnard
Keyword(s):  
Electron Probe ◽  
Surface Segregation ◽  
Depth Distribution ◽  
Computing Time ◽  
Depth Resolution ◽  
Physical Parameters ◽  
Electron Probe Analysis ◽  
Interface Phases ◽  
Excitation Conditions ◽  
High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

A novel high-resolution laser-melting sampler for discrete analyses of ion concentrations and stable water isotopic compositions in firn and ice cores

2021 ◽  
Author(s):  
Yuko Motizuki ◽  
Yoichi Nakai ◽  
Kazuya Takahashi ◽  
Junya Hirose ◽  
Yu Vin Sahoo ◽  
...  
Keyword(s):  
Ice Core ◽  
Ice Cores ◽  
Depth Resolution ◽  
Climatic Changes ◽  
Accumulation Rates ◽  
Laser Melting ◽  
Ion Concentrations ◽  
Annual Layer ◽  
Annual Resolution ◽  
High Depth

&lt;p&gt;Ice cores preserve past climatic changes and, in some cases, astronomical signals. Here we present a newly developed automated ice-core sampler that employs laser melting. A hole in an ice core approximately 3 mm in diameter is melted and heated well below the boiling point by laser irradiation, and the meltwater is simultaneously siphoned by a 2 mm diameter movable evacuation nozzle that also holds the laser fiber. The advantage of sampling by laser melting is that molecular ion concentrations and stable water isotope compositions in ice cores can be measured at high depth resolution, which is advantageous for ice cores with low accumulation rates. This device takes highly discrete samples from ice cores, attaining depth resolution as small as ~3 mm with negligible cross contamination; the resolution can also be set at longer lengths suitable for validating longer-term profiles of various ionic and water isotopic constituents in ice cores. This technique allows the detailed reconstruction of past climatic changes at annual resolution and the investigation of transient ionic and isotopic signals within single annual layers in low-accumulation cores, potentially by annual layer counting.&lt;/p&gt;

scholarly journals Ion Beam Analysis for the Investigation of Diffusion Processes

2020 ◽  
Vol 13 ◽  
pp. 51
Author(s):  
H.-W. Becker
Keyword(s):  
Diffusion Processes ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Diffusion Studies ◽  
New Applications ◽  
Diffusion Of Hydrogen ◽  
High Depth

The unique advantages of ion beam analysis, such as the depth resolved unam- biguous stoichometric information of RBS or the possibility to detect hydrogen with high depth resolution still opens new applications in fundamental as well as applied science. Two examples are presented here.The diffusion of hydrogen in cement during the formation of cement has been studied with the 15N hydrogen depth profiling. It could be shown, that the known stages of the hydration process are correlated with the diffusion of hydrogen on a nanometer scale.Diffusion processes play also an important role in geology. The investigation of such processes with RBS will be presented. Prospects of diffusion studies using isotopie tracing with low lying resonances will be discussed.

Surface Analysis by Laser Ionization

MRS Bulletin ◽  
1987 ◽  
Vol 12 (6) ◽  
pp. 52-59 ◽  
Author(s):  
J.B. Pallix ◽  
C.H. Becker ◽  
N. Newman
Keyword(s):  
Mass Spectrometry ◽  
Surface Analysis ◽  
Depth Resolution ◽  
Laser Ionization ◽  
Analysis Method ◽  
Flight Mass Spectrometry ◽  
System A ◽  
Developed Surface ◽  
Surface Analysis Method ◽  
High Depth

AbstractAn overview is presented of a recently developed surface analysis method that combines (1) desorption of neutral atoms and molecules from a sample, typically by sputtering, (2) efficient uniform ionization close to but above the surface by an intense ultraviolet laser beam, and (3) time-of-flight mass spectrometry. This technique, surface analysis by laser ionization, or SALI, provides extremely efficient and sensitive quantitative analysis of surfaces and materials with high depth resolution. Essentially any type of material can be analyzed as evidenced by the examples presented here: the Au-GaAs system, a phosphor-silicate glass, and a bulk polymer.

scholarly journals Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

2019 ◽  
Vol 34 (5) ◽  
pp. 848-853 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Piotr Caban ◽  
Jacek Baranowski
Keyword(s):  
Mass Spectrometry ◽  
Boron Nitride ◽  
Secondary Ion Mass Spectrometry ◽  
Van Der Waals ◽  
Depth Resolution ◽  
Atomic Resolution ◽  
Epitaxial Layers ◽  
Grain Formation ◽  
Secondary Ion

A refined SIMS procedure allows reaching atomic resolution and characterization of each layer in van der Waals structures separately.

Reaction of Amorphous Minb Films with Crystalline Metal Overlayers

1984 ◽  
Vol 37 ◽  
Author(s):  
E. A. Dobisz ◽  
B. L. Doyle ◽  
J. H. Perepezko ◽  
J. D. Wiley ◽  
P. S. Peercy
Keyword(s):  
Metal Film ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Film ◽  
Depth Resolution ◽  
Rutherford Backscattering ◽  
Amorphous Films ◽  
The Stability ◽  
Metal Overlayers ◽  
Crystalline Metal ◽  
High Depth

AbstractIn many cases the stability of amorphous films is influenced by interaction with metallic crystalline overlayers. Such interactions between Au, Ni, Nb and Ta overlayers and a-(Ni-Nb) films are reported. During interdiffusion Au overlayers reacted with a-(Ni-Nb) to form two different adjacent crystalline layers. In order to study the influence of relaxation of the amorphous film on overlayer reaction several a-(Ni-Nb) samples were pre-annealed prior to Au deposition. High depth resolution Rutherford Backscattering Spectrometry (RBS) demonstrates that preannealing lowers the diffusion poefficient of Au in a-(Ni-Nb) at 4500C from 7.5×10−22 m2/s to 8.7×10−23 m22/s. During interdiffusion Ta was discovered to be substantially more inert than Au. For example, negligible interdiffusion between Ta and a-(Ni-Nb) at 505°C after 25 hours implies a diffusivity of less than 5×10−24 m2/s. These observations allow assessment of some of the requirements for increasing the stability of crystalline-amorphous metal film layered structures.

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