Wire-length distribution of three-dimensional integrated circuits

Author(s):  
A. Nahman ◽  
A. Fan ◽  
J. Chung ◽  
R. Reif
2006 ◽  
Vol 45 (4B) ◽  
pp. 3260-3265 ◽  
Author(s):  
Jun Deguchi ◽  
Takeaki Sugimura ◽  
Yoshihiro Nakatani ◽  
Takafumi Fukushima ◽  
Mitsumasa Koyanagi

2005 ◽  
Author(s):  
Jun Deguchi ◽  
Yoshihiro Nakatani ◽  
Takeaki Sugimura ◽  
Takafumi Fukushima ◽  
Mitsumasa Koyanagi

Author(s):  
S. Khadpe ◽  
R. Faryniak

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.


1997 ◽  
Vol 473 ◽  
Author(s):  
J. A. Davis ◽  
J. D. Meindl

ABSTRACTOpportunities for Gigascale Integration (GSI) are governed by a hierarchy of physical limits. The levels of this hierarchy have been codified as: 1) fundamental, 2) material, 3) device, 4) circuit and 5) system. Many key limits at all levels of the hierarchy can be displayed in the power, P, versus delay, td, plane and the reciprocal length squared, L-2, versus response time, τ, plane. Power, P, is the average power transfer during a binary switching transition and delay, td, is the time required for the transition. Length, L, is the distance traversed by an interconnect that joins two nodes on a chip and response time, τ, characterizes the corresponding interconnect circuit. At the system level of the hierarchy, quantitative definition of both the P versus td and the L-2 versus τ displays requires an estimate of the complete stochastic wiring distribution of a chip.Based on Rent's Rule, a well known empirical relationship between the number of signal input/output terminals on a block of logic and the number of gate circuits with the block, a rigorous derivation of a new complete stochastic wire length distribution for an on-chip random logic network is described. This distribution is compared to actual data for modern microprocessors and to previously described distributions. A methodology for estimating the complete wire length distribution for future GSI products is proposed. The new distribution is then used to enhance the critical path model that determines the maximum clock frequency of a chip; to derive a preliminary power dissipation model for a random logic network; and, to define an optimal architecture of a multilevel interconnect network that minimizes overall chip size. In essence, a new complete stochastic wiring distribution provides a generic basis for maximizing the value obtained from a multilevel interconnect technology.


Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).


Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4616
Author(s):  
Takashi Ikuno ◽  
Zen Somei

We have developed a simple method of fabricating liquid metal nanowire (NW) arrays of eutectic GaIn (EGaIn). When an EGaIn droplet anchored on a flat substrate is pulled perpendicular to the substrate surface at room temperature, an hourglass shaped EGaIn is formed. At the neck of the shape, based on the Plateau–Rayleigh instability, the EGaIn bridge with periodically varying thicknesses is formed. Finally, the bridge is broken down by additional pulling. Then, EGaIn NW is formed at the surface of the breakpoint. In addition, EGaIn NW arrays are found to be fabricated by pulling multiple EGaIn droplets on a substrate simultaneously. The average diameter of the obtained NW was approximately 0.6 μm and the length of the NW depended on the amount of droplet anchored on the substrate. The EGaIn NWs fabricated in this study may be used for three-dimensional wiring for integrated circuits, the tips of scanning probe microscopes, and field electron emission arrays.


Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1304
Author(s):  
Raquel Fernández de Cabo ◽  
David González-Andrade ◽  
Pavel Cheben ◽  
Aitor V. Velasco

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).


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