Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs

Author(s):  
Jaime Calvo-Gallego ◽  
Juan A. Delgado-Notario ◽  
Miguel Ferrando-Bataller ◽  
Kristel Fobelets ◽  
Yahya M. Meziani ◽  
...  
2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.


2014 ◽  
Vol 5 (1) ◽  
pp. 737-741
Author(s):  
Alejandro Dueñas Jiménez ◽  
Francisco Jiménez Hernández

Because of the high volume of processing, transmission, and information storage, electronic systems presently requires faster clock speeds tosynchronizethe integrated circuits. Presently the “speeds” on the connections of a printed circuit board (PCB) are in the order of the GHz. At these frequencies the behavior of the interconnects are more like that of a transmission line, and hence distortion, delay, and phase shift- effects caused by phenomena like cross talk, ringing and over shot are present and may be undesirable for the performance of a circuit or system.Some of these phrases were extracted from the chapter eight of book “2-D Electromagnetic Simulation of Passive Microstrip Circuits” from the corresponding author of this paper.


2007 ◽  
Author(s):  
Richard Zhu ◽  
Ernian Pan ◽  
Peter W. Chung ◽  
Xinli Cai ◽  
Kim M. Liew ◽  
...  

2010 ◽  
Vol 3 (2) ◽  
pp. 28-28
Author(s):  
Peter Holmes Stoltz

2019 ◽  
Vol 629 ◽  
pp. A112 ◽  
Author(s):  
B. M. Giuliano ◽  
A. A. Gavdush ◽  
B. Müller ◽  
K. I. Zaytsev ◽  
T. Grassi ◽  
...  

Context. Reliable, directly measured optical properties of astrophysical ice analogues in the infrared and terahertz (THz) range are missing from the literature. These parameters are of great importance to model the dust continuum radiative transfer in dense and cold regions, where thick ice mantles are present, and are necessary for the interpretation of future observations planned in the far-infrared region. Aims. Coherent THz radiation allows for direct measurement of the complex dielectric function (refractive index) of astrophysically relevant ice species in the THz range. Methods. We recorded the time-domain waveforms and the frequency-domain spectra of reference samples of CO ice, deposited at a temperature of 28.5 K and annealed to 33 K at different thicknesses. We developed a new algorithm to reconstruct the real and imaginary parts of the refractive index from the time-domain THz data. Results. The complex refractive index in the wavelength range 1 mm–150 μm (0.3–2.0 THz) was determined for the studied ice samples, and this index was compared with available data found in the literature. Conclusions. The developed algorithm of reconstructing the real and imaginary parts of the refractive index from the time-domain THz data enables us, for the first time, to determine the optical properties of astrophysical ice analogues without using the Kramers–Kronig relations. The obtained data provide a benchmark to interpret the observational data from current ground-based facilities as well as future space telescope missions, and we used these data to estimate the opacities of the dust grains in presence of CO ice mantles.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3150
Author(s):  
Ignas Nevinskas ◽  
Zenius Mockus ◽  
Remigijus Juškėnas ◽  
Ričardas Norkus ◽  
Algirdas Selskis ◽  
...  

Electron dynamics in the polycrystalline bismuth films were investigated by measuring emitted terahertz (THz) radiation pulses after their photoexcitation by tunable wavelength femtosecond duration optical pulses. Bi films were grown on metallic Au, Pt, and Ag substrates by the electrodeposition method with the Triton X-100 electrolyte additive, which allowed us to obtain more uniform films with consistent grain sizes on any substrate. It was shown that THz pulses are generated due to the spatial separation of photoexcited electrons and holes diffusing from the illuminated surface at different rates. The THz photoconductivity spectra analysis has led to a conclusion that the thermalization of more mobile carriers (electrons) is dominated by the carrier–carrier scattering rather than by their interaction with the lattice.


Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.


2021 ◽  
Author(s):  
A. V. Gorbatova ◽  
D. I. Khusyainov ◽  
A. M. Buryakov
Keyword(s):  

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