scholarly journals Quality Improvement of GaN on Si Substrate for Ultraviolet Photodetector Application

2014 ◽  
Vol 50 (1) ◽  
pp. 35-41 ◽  
Author(s):  
Chao-Wei Hsu ◽  
Yung-Feng Chen ◽  
Yan-Kuin Su
Keyword(s):  
Quality Improvement ◽  
Ultraviolet Photodetector ◽  
Si Substrate ◽  
Gan On Si

scholarly journals Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 28
Author(s):  
Fangzhou Liang ◽  
Wen Chen ◽  
Meixin Feng ◽  
Yingnan Huang ◽  
Jianxun Liu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Speed ◽  
Ultraviolet Photodetector ◽  
Si Substrate ◽  
Si Doping ◽  
Low Dislocation Density ◽  
Photo Response ◽  
Si Doped ◽  
Gan On Si ◽  
Ultraviolet Photodetectors

GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time.

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

2008 ◽  
Vol 1068 ◽  
Author(s):  
Tsuneo Ito ◽  
Yutaka Terada ◽  
Takashi Egawa
Keyword(s):  
Sapphire Substrate ◽  
Deep Level ◽  
Buffer Layers ◽  
Si Substrate ◽  
Electron Traps ◽  
Organic Vapor ◽  
Pair Number ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Gan On Si

ABSTRACTDeep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

Optical Properties of GaN on Si Substrate Using Plasma-Assisted MOCVD Technique in the Infrared and Visible Regions

2005 ◽  
pp. 519-524
Author(s):  
M.R. Hashim ◽  
S.A. Oh ◽  
Sha Shiong Ng ◽  
Z. Hassan ◽  
K. Ibrahim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Si Substrate ◽  
Gan On Si ◽  
Mocvd Technique

Nanopatterning and selective area epitaxy of GaN on Si substrate

2008 ◽  
Author(s):  
L. S. Wang ◽  
S. J. Chua ◽  
S. Tripathy ◽  
K. Y. Zang ◽  
B. Z. Wang ◽  
...  
Keyword(s):  
Si Substrate ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Gan On Si

Impurity reduction and crystalline quality improvement due to isovalent doping (In) in GaAs epilayers on Si substrate by chemical beam epitaxy

2000 ◽  
Vol 209 (4) ◽  
pp. 621-624 ◽  
Author(s):  
S Saravanan ◽  
M Adachi ◽  
N Satoh ◽  
T Soga ◽  
T Jimbo ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Crystalline Quality ◽  
Chemical Beam Epitaxy ◽  
Si Substrate ◽  
Isovalent Doping

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

1999 ◽  
Vol 38 (Part 2, No. 5A) ◽  
pp. L492-L494 ◽  
Author(s):  
Hiroyasu Ishikawa ◽  
Guang-Yuan Zhao ◽  
Naoyuki Nakada ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Si Substrate ◽  
Gan On Si

High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

2014 ◽  
Vol 806 ◽  
pp. 89-93 ◽  
Author(s):  
Sai Jiao ◽  
Yuya Murakami ◽  
Hiroyoki Nagasawa ◽  
Hirokazu Fukidome ◽  
Isao Makabe ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Production Cost ◽  
Structural Quality ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
High Scalability ◽  
Nanoelectromechanical System ◽  
Sic Film

The growth of graphene on 3C-SiC/Si heterostructure is a promising approach, which provides low production cost, high scalability and easiness of nanoelectromechanical system fabrication. However, the quality of graphene is still insufficient for device applications due to mediocre morphological and structural quality of the 3C-SiC epilayers compared to bulk SiC crystals and to excessive Si out-diffusion from the Si substrate. Here, we propose a solution of inserting a 4H-AlN layer between 3C-SiC and Si, which allows us to polish the 3C-SiC film without worrying about enhancement of the Si out-diffusion despite the thinning after the polishing. With this insertion, a considerable quality improvement is achieved in our graphene on silicon.

ZnGa2O4 deep-ultraviolet photodetector based on Si substrate

2021 ◽  
Vol 283 ◽  
pp. 128805
Author(s):  
Wanmin Lin ◽  
Dan Zhang ◽  
Sixian Liu ◽  
Yuqiang Li ◽  
Wei Zheng ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Si Substrate ◽  
Deep Ultraviolet

High Temperature Operation of A New Normally-Off AlGaN/GaN HFET on Si Substrate

2003 ◽  
Vol 798 ◽  
Author(s):  
Seikoh Yoshida ◽  
Jiang Li ◽  
Takahiro Wada ◽  
Hironari Takehara
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
The Novel ◽  
Si Substrate ◽  
Gan On Si ◽  
Gan Heterostructure ◽  
P Type ◽  
High Temperature Operation ◽  
First Time

ABSTRACTWe report on the novel normally-off AlGaN/p-type GaN heterojunction field effect transistors (HFETs). We grew the AlGaN/p-GaN heterostructure on p-type Si (111) substrate using a metalorganic chemical vapor deposition (MOCVD). A homogeneous buffer layer was first formed on a Si (111) substrate at 1123 K. After that, AlGaN (30 nm)/high resistive p-type GaN (500 nm) heterostructure was also grown at 1303 K without cracking. We fabricated an HFET using AlGaN/p-type GaN on Si substrate. The ohmic electrode material was Al/Ti/Au and the gate electrode was Pt/Au. The distance between the source and the drain was 0.01 mm. The gate length and width were 2000 nm and 0.15 mm, respectively. As a result, the HFET was operated at the condition of the positive gate bias. The pinch-off voltage was 0 V. A normally-off operation was thus confirmed for the first time. The breakdown voltage of FET was over 250 V. We also confirmed that the normally-off HFET was operated at 573 K for over 150 h.

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