scholarly journals High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

2019 ◽  
Vol 40 (3) ◽  
pp. 439-442 ◽  
Author(s):  
Luca Nela ◽  
Minghua Zhu ◽  
Jun Ma ◽  
Elison Matioli
Keyword(s):  
Work Function ◽  
High Performance ◽  
Large Work

High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2

2021 ◽  
pp. 2010303
Author(s):  
Ki‐Tae Kim ◽  
Hye‐Jin Jin ◽  
Wonjun Choi ◽  
Yeonsu Jeong ◽  
Hyung Gon Shin ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
High Performance ◽  
Large Work

scholarly journals Solution-Processed Transparent Conducting Electrodes for Flexible Organic Solar Cells with 16.61% Efficiency

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Juanyong Wan ◽  
Yonggao Xia ◽  
Junfeng Fang ◽  
Zhiguo Zhang ◽  
Bingang Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Organic Solar Cells ◽  
High Performance ◽  
High Efficiency ◽  
Electrical Stability ◽  
Solution Processed ◽  
Good Thermal Stability ◽  
Transparent Conducting ◽  
High Flexibility

AbstractNonfullerene organic solar cells (OSCs) have achieved breakthrough with pushing the efficiency exceeding 17%. While this shed light on OSC commercialization, high-performance flexible OSCs should be pursued through solution manufacturing. Herein, we report a solution-processed flexible OSC based on a transparent conducting PEDOT:PSS anode doped with trifluoromethanesulfonic acid (CF3SO3H). Through a low-concentration and low-temperature CF3SO3H doping, the conducting polymer anodes exhibited a main sheet resistance of 35 Ω sq−1 (minimum value: 32 Ω sq−1), a raised work function (≈ 5.0 eV), a superior wettability, and a high electrical stability. The high work function minimized the energy level mismatch among the anodes, hole-transporting layers and electron-donors of the active layers, thereby leading to an enhanced carrier extraction. The solution-processed flexible OSCs yielded a record-high efficiency of 16.41% (maximum value: 16.61%). Besides, the flexible OSCs afforded the 1000 cyclic bending tests at the radius of 1.5 mm and the long-time thermal treatments at 85 °C, demonstrating a high flexibility and a good thermal stability.

Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

2002 ◽  
Vol 716 ◽  
Author(s):  
Takaaki Amada ◽  
Nobuhide Maeda ◽  
Kentaro Shibahara
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Nitrogen Concentration ◽  
Implantation Dose ◽  
Control Technique ◽  
High Dose ◽  
Implantation Energy ◽  
20 Nm ◽  
Large Work ◽  
Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

scholarly journals Post-Annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

2021 ◽  
Author(s):  
Yuanwei Jiang ◽  
Shuangying Cao ◽  
Linfeng Lu ◽  
Guanlin Du ◽  
Yinyue Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Electronic Properties ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Crystalline Silicon Solar Cells ◽  
Post Annealing ◽  
Si Solar Cells ◽  
Optical And Electronic Properties ◽  
Large Work

Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100oC shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiO x Hole‐Injection Layers with a High and Stable Work Function

2019 ◽  
Vol 30 (5) ◽  
pp. 1907265 ◽  
Author(s):  
Jian Lin ◽  
Xingliang Dai ◽  
Xiaoyong Liang ◽  
Desui Chen ◽  
Xuerong Zheng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Work Function ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting

Nickel Silicide Work Function Tuning Study In Metal-Gate CMOS Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
Jun Yuan ◽  
Grant Z. Pan ◽  
Yu-Lin Chao ◽  
Jason C.S. Woo
Keyword(s):  
Work Function ◽  
High Performance ◽  
Gate Oxide ◽  
Nickel Silicide ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Oxide Interface ◽  
Metal Gate ◽  
Activation Temperature ◽  
Pile Up

ABSTRACTMid-gap work function (∼4.7eV) for mono-nickel-silicide (NiSi) was obtained by extrapolating flat band voltages of metal-oxide-semiconductor (MOS) capacitors with different gate oxide thickness. Both silicidation temperature and time can affect the nickel silicide work function as a result of different Ni:Si ratio close to the gate oxide interface. Arsenic implantation into the polysilicon before silicidation can shift the NiSi work function towards the silicon conduction band, which makes it suitable for high performance NMOS applications. The physical mechanism responsible for this work function shift is arsenic pile-up at the oxide interface during the nickel silicidation process. Therefore, dual work function metal gate can be obtained by using a single gate full silicidation process. Silicidation temperature and time also affect the work function shift from arsenic dopant, and the incomplete gate silicidation can have the maximum work function modification effect. Arsenic activation temperature before silicidation was found to have a significant effect on the work function shift. Un-annealed samples exhibit a minimum shift in work function due to the low dopant pile-up concentration at the oxide interface.

scholarly journals MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference

2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Zhe Kang ◽  
Yongfa Cheng ◽  
Zhi Zheng ◽  
Feng Cheng ◽  
Ziyu Chen ◽  
...  
Keyword(s):  
Work Function ◽  
Contact Structure ◽  
Work Function Difference ◽  
Large Work ◽  
Asymmetric Contact ◽  
Function Difference

scholarly journals Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 82 ◽  
Author(s):  
David K. Sang ◽  
Huide Wang ◽  
Meng Qiu ◽  
Rui Cao ◽  
Zhinan Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Work Function ◽  
High Performance ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Band Alignment ◽  
Thickness Variation ◽  
Two Dimensional ◽  
Electronic Band

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.

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