The role of the singlet metastables in capacitively coupled oxygen discharges

2016 ◽  
Author(s):  
J. T. Gudmundsson ◽  
H. Hannesdottir
Keyword(s):  
Capacitively Coupled

Role of hydrogen in evolution of plasma parameters and dust growth in capacitively coupled dusty plasmas

2010 ◽  
Vol 97 (20) ◽  
pp. 201503 ◽  
Author(s):  
K. B. Chai ◽  
Wonho Choe ◽  
C. R. Seon ◽  
C. W. Chung
Keyword(s):  
Dusty Plasmas ◽  
Plasma Parameters ◽  
Capacitively Coupled

scholarly journals Controlling the flux of reactive species: a case study on thin film deposition in an aniline/argon plasma

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
D. Sciacqua ◽  
C. Pattyn ◽  
A. Jagodar ◽  
E. von Wahl ◽  
T. Lecas ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Argon Plasma ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Capacitively Coupled ◽  
Low Temperature Plasmas ◽  
Free Films

Abstract The plasma based synthesis of thin films is frequently used to deposit ultra-thin and pinhole-free films on a wide class of different substrates. However, the synthesis of thin films by means of low temperature plasmas is rather complex due to the great number of different species (neutrals, radicals, ions) that are potentially involved in the deposition process. This contribution deals with polymerization processes in a capacitively coupled discharge operated in a mixture of argon and aniline where the latter is a monomer, which is used for the production of plasma-polymerized polyaniline, a material belonging to the class of conductive polymers. This work will present a particular experimental approach that allows to (partially) distinguish the contribution of different species to the film growth and thus to control to a certain extent the properties of the resulting material. The control of the species flux emerging from the plasma and contributing to the film growth also sheds new light on the deposition process, in particular with respect to the role of the ion component. The analysis of the produced films has been performed by means of Fourier Transform Infrared spectroscopy (FTIR) and Near Edge X-ray Absorption Fine Structure spectroscopy (NEXAFS).

Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma

2005 ◽  
Vol 44 (6A) ◽  
pp. 3817-3821 ◽  
Author(s):  
Hidenori Mikami ◽  
Tomoaki Hatayama ◽  
Hiroshi Yano ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Silicon Carbide ◽  
Dry Etching ◽  
Capacitively Coupled ◽  
Capacitively Coupled Plasma
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