Distributed Training for High Resolution Images: A Domain and Spatial Decomposition Approach

AbstractHigh resolution images, obtained during July 11, 1991 total solar eclipse, allowed us to estimate the degree of solar corona polarization in the light of FeXIV 530.3 nm emission line and in the white light, as well. Very preliminary analysis reveals remarkable differences in the degree of polarization for both sets of data, particularly as for level of polarization and its distribution around the Sun’s limb.

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Remarks on the application of backscattered electron imaging (BEI) to the scanning electron microscopy (SEM) of biological structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100076159 ◽

1983 ◽

Vol 41 ◽

pp. 484-487

Author(s):

Etienne de Harven

Keyword(s):

High Resolution ◽

Incident Beam ◽

Spot Size ◽

Primary Electron ◽

Critical Point Drying ◽

Cell Shapes ◽

High Resolution Images ◽

Backscattered Electron ◽

Electron Imaging ◽

Scanning Electron

Biological ultrastructures have been extensively studied with the scanning electron microscope (SEM) for the past 12 years mainly because this instrument offers accurate and reproducible high resolution images of cell shapes, provided the cells are dried in ways which will spare them the damage which would be caused by air drying. This can be achieved by several techniques among which the critical point drying technique of T. Anderson has been, by far, the most reproducibly successful. Many biologists, however, have been interpreting SEM micrographs in terms of an exclusive secondary electron imaging (SEI) process in which the resolution is primarily limited by the spot size of the primary incident beam. in fact, this is not the case since it appears that high resolution, even on uncoated samples, is probably compromised by the emission of secondary electrons of much more complex origin.When an incident primary electron beam interacts with the surface of most biological samples, a large percentage of the electrons penetrate below the surface of the exposed cells.

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Field Emission SEM Equipped With Noise Compensator

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071958 ◽

1973 ◽

Vol 31 ◽

pp. 302-303

Author(s):

S. Saito ◽

H. Todokoro ◽

S. Nomura ◽

T. Komoda

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Scanning Electron Microscope ◽

Field Emission ◽

Low Contrast ◽

Probe Current ◽

High Resolution Images ◽

Scanning Electron

Field emission scanning electron microscope (FESEM) features extremely high resolution images, and offers many valuable information. But, for a specimen which gives low contrast images, lateral stripes appear in images. These stripes are resulted from signal fluctuations caused by probe current noises. In order to obtain good images without stripes, the fluctuations should be less than 1%, especially for low contrast images. For this purpose, the authors realized a noise compensator, and applied this to the FESEM.Fig. 1 shows an outline of FESEM equipped with a noise compensator. Two apertures are provided gust under the field emission gun.

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Low-Loss Images in a Stem/Tem Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009244x ◽

1976 ◽

Vol 34 ◽

pp. 496-497 ◽

Cited By ~ 1

Author(s):

David C. Joy ◽

Dennis M. Maher

Keyword(s):

High Resolution ◽

Surface Topography ◽

Beam Direction ◽

Low Loss ◽

Specimen Holder ◽

Glancing Angle ◽

High Resolution Images ◽

Set Up ◽

Conventional Manner ◽

Objective Type

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.

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Effect of strain on ADF-STEM high-resolution images

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100087641 ◽

1991 ◽

Vol 49 ◽

pp. 666-667

Author(s):

M. Kelly ◽

D.M. Bird

Keyword(s):

High Resolution ◽

Strong Influence ◽

Intensity Variation ◽

Dark Field ◽

Atomic Resolution ◽

Strain Fields ◽

High Resolution Image ◽

Annular Dark Field ◽

High Resolution Images ◽

Interesting Alternative

It is well known that strain fields can have a strong influence on the details of HREM images. This, for example, can cause problems in the analysis of edge-on interfaces between lattice mismatched materials. An interesting alternative to conventional HREM imaging has recently been advanced by Pennycook and co-workers where the intensity variation in the annular dark field (ADF) detector is monitored as a STEM probe is scanned across the specimen. It is believed that the observed atomic-resolution contrast is correlated with the intensity of the STEM probe at the atomic sites and the way in which this varies as the probe moves from cell to cell. As well as providing a directly interpretable high-resolution image, there are reasons for believing that ADF-STEM images may be less suseptible to strain than conventional HREM. This is because HREM images arise from the interference of several diffracted beams, each of which is governed by all the excited Bloch waves in the crystal.

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Electron crystallographic determination of the 3-D structure of staurolite at atomic resolution

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010008701x ◽

1991 ◽

Vol 49 ◽

pp. 540-541

Author(s):

Kenneth H. Downing ◽

Hu Meisheng ◽

Hans-Rudolf Went ◽

Michael A. O'Keefe

Keyword(s):

High Resolution ◽

Three Dimensional ◽

High Resolution Electron Microscopy ◽

Atomic Resolution ◽

Dimensional Structure ◽

Structure Information ◽

Resolution Electron ◽

Scattering Effects ◽

High Resolution Images ◽

Effects Of Radiation

With current advances in electron microscope design, high resolution electron microscopy has become routine, and point resolutions of better than 2Å have been obtained in images of many inorganic crystals. Although this resolution is sufficient to resolve interatomic spacings, interpretation generally requires comparison of experimental images with calculations. Since the images are two-dimensional representations of projections of the full three-dimensional structure, information is invariably lost in the overlapping images of atoms at various heights. The technique of electron crystallography, in which information from several views of a crystal is combined, has been developed to obtain three-dimensional information on proteins. The resolution in images of proteins is severely limited by effects of radiation damage. In principle, atomic-resolution, 3D reconstructions should be obtainable from specimens that are resistant to damage. The most serious problem would appear to be in obtaining high-resolution images from areas that are thin enough that dynamical scattering effects can be ignored.

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Principle and practice of high-resolution imaging with a field-emission TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121090 ◽

1992 ◽

Vol 50 (1) ◽

pp. 138-139

Author(s):

Max T. Otten ◽

Wim M.J. Coene

Keyword(s):

High Resolution ◽

Field Emission ◽

Incidence Angle ◽

Temporal Coherence ◽

Energy Spread ◽

High Resolution Imaging ◽

Major Improvement ◽

High Resolution Images ◽

Resolution Imaging

High-resolution imaging with a LaB6 instrument is limited by the spatial and temporal coherence, with little contrast remaining beyond the point resolution. A Field Emission Gun (FEG) reduces the incidence angle by a factor 5 to 10 and the energy spread by 2 to 3. Since the incidence angle is the dominant limitation for LaB6 the FEG provides a major improvement in contrast transfer, reducing the information limit to roughly one half of the point resolution. The strong improvement, predicted from high-resolution theory, can be seen readily in diffractograms (Fig. 1) and high-resolution images (Fig. 2). Even if the information in the image is limited deliberately to the point resolution by using an objective aperture, the improved contrast transfer close to the point resolution (Fig. 1) is already worthwhile.

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Computer processing of high-resolution images of periodic specimens

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100141834 ◽

1986 ◽

Vol 44 ◽

pp. 2-5

Author(s):

W. Chiu ◽

M.F. Schmid ◽

T.-W. Jeng

Keyword(s):

High Resolution ◽

Fourier Transforms ◽

Complex Structure ◽

Distribution Functions ◽

Multiple Image ◽

Cryo Electron Microscopy ◽

Structure Factors ◽

Unit Cells ◽

High Resolution Images ◽

Phase Probability Distribution

Cryo-electron microscopy has been developed to the point where one can image thin protein crystals to 3.5 Å resolution. In our study of the crotoxin complex crystal, we can confirm this structural resolution from optical diffractograms of the low dose images. To retrieve high resolution phases from images, we have to include as many unit cells as possible in order to detect the weak signals in the Fourier transforms of the image. Hayward and Stroud proposed to superimpose multiple image areas by combining phase probability distribution functions for each reflection. The reliability of their phase determination was evaluated in terms of a crystallographic “figure of merit”. Grant and co-workers used a different procedure to enhance the signals from multiple image areas by vector summation of the complex structure factors in reciprocal space.

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Recent applications of TEM to the study of interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174679 ◽

1990 ◽

Vol 48 (4) ◽

pp. 308-309

Author(s):

C. Barry Carter

Keyword(s):

High Resolution ◽

Sample Preparation ◽

Grain Boundaries ◽

Diffuse Scattering ◽

Imaging Techniques ◽

Amorphous Material ◽

Contrast Imaging ◽

Current State ◽

Actual Nature ◽

High Resolution Images

This paper will review the current state of understanding of interface structure and highlight some of the future needs and problems which must be overcome. The study of this subject can be separated into three different topics: 1) the fundamental electron microscopy aspects, 2) material-specific features of the study and 3) the characteristics of the particular interfaces. The two topics which are relevant to most studies are the choice of imaging techniques and sample preparation. The techniques used to study interfaces in the TEM include high-resolution imaging, conventional diffraction-contrast imaging, and phase-contrast imaging (Fresnel fringe images, diffuse scattering). The material studied affects not only the characteristics of the interfaces (through changes in bonding, etc.) but also the method used for sample preparation which may in turn have a significant affect on the resulting image. Finally, the actual nature and geometry of the interface must be considered. For example, it has become increasingly clear that the plane of the interface is particularly important whenever at least one of the adjoining grains is crystalline.A particularly productive approach to the study of interfaces is to combine different imaging techniques as illustrated in the study of grain boundaries in alumina. In this case, the conventional imaging approach showed that most grain boundaries in ion-thinned samples are grooved at the grain boundary although the extent of this grooving clearly depends on the crystallography of the surface. The use of diffuse scattering (from amorphous regions) gives invaluable information here since it can be used to confirm directly that surface grooving does occur and that the grooves can fill with amorphous material during sample preparation (see Fig. 1). Extensive use of image simulation has shown that, although information concerning the interface can be obtained from Fresnel-fringe images, the introduction of artifacts through sample preparation cannot be lightly ignored. The Fresnel-fringe simulation has been carried out using a commercial multislice program (TEMPAS) which was intended for simulation of high-resolution images.

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Computers and diffraction analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100152197 ◽

1989 ◽

Vol 47 ◽

pp. 44-45

Author(s):

J. A. Eades

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Electron Diffraction ◽

Diffraction Analysis ◽

Electron Diffraction Analysis ◽

Image Simulation ◽

Correct Interpretation ◽

High Profile ◽

High Resolution Images ◽

Image Simulations

For well over two decades computers have played an important role in electron microscopy; they now pervade the whole field - as indeed they do in so many other aspects of our lives. The initial use of computers was mainly for large (as it seemed then) off-line calculations for image simulations; for example, of dislocation images.Image simulation has continued to be one of the most notable uses of computers particularly since it is essential to the correct interpretation of high resolution images. In microanalysis, too, the computer has had a rather high profile. In this case because it has been a necessary part of the equipment delivered by manufacturers. By contrast the use of computers for electron diffraction analysis has been slow to prominence. This is not to say that there has been no activity, quite the contrary; however it has not had such a great impact on the field.

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