High-Performance MEMS Pressure Sensor Fully-Integrated with a 3-Axis Accelerometer

Author(s):  
Frederic Souchon ◽  
Loic Joet ◽  
Carine Ladner ◽  
Patrice Rey ◽  
Stephan Louwers
2016 ◽  
Vol 28 (15) ◽  
pp. 2971-2977 ◽  
Author(s):  
Abdur Rehman Jalil ◽  
Hao Chang ◽  
Vineeth Kumar Bandari ◽  
Peter Robaschik ◽  
Jian Zhang ◽  
...  

Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 438 ◽  
Author(s):  
Youngsang Ko ◽  
Dabum Kim ◽  
Goomin Kwon ◽  
Jungmok You

Improved pressure sensing is of great interest to enable the next-generation of bioelectronics systems. This paper describes the development of a transparent, flexible, highly sensitive pressure sensor, having a composite sandwich structure of elastic silver nanowires (AgNWs) and poly(ethylene glycol) (PEG). A simple PEG photolithography was employed to construct elastic AgNW-PEG composite patterns on flexible polyethylene terephthalate (PET) film. A porous PEG hydrogel structure enabled the use of conductive AgNW patterns while maintaining the elasticity of the composite material, features that are both essential for high-performance pressure sensing. The transparency and electrical properties of AgNW-PEG composite could be precisely controlled by varying the AgNW concentration. An elastic AgNW-PEG composite hydrogel with 0.6 wt % AgNW concentration exhibited high transmittance including T550nm of around 86%, low sheet resistance of 22.69 Ω·sq−1, and excellent bending durability (only 5.8% resistance increase under bending to 10 mm radius). A flexible resistive pressure sensor based on our highly transparent AgNW-PEG composite showed stable and reproducible response, high sensitivity (69.7 kPa−1), low sensing threshold (~2 kPa), and fast response time (20–40 ms), demonstrating the effectiveness of the AgNW-PEG composite material as an elastic conductor.


2021 ◽  
Author(s):  
Giulia Acconcia ◽  
Francesco Malanga ◽  
Ivan Labanca ◽  
Massimo Ghioni ◽  
Ivan Rech

2019 ◽  
Vol 2019 (1) ◽  
pp. 000438-000443 ◽  
Author(s):  
Joseph Meyer ◽  
Reza Moghimi ◽  
Noah Sturcken

Abstract The generational scaling of CMOS device geometries, as predicted by Moore's law, has significantly outpaced advances in CMOS package and power electronics technology. The conduction of power to a high-performance integrated circuit (IC) die typically requires close to 50% of package and IC I/O and is increasing with trends towards lower supply voltages and higher power density that occur in advanced CMOS nodes. The disparity in scaling of logic, package, and I/O technology has created a significant bottleneck that has become a dominant constraint on computational performance. By performing power conversion and voltage regulation in-package, this limitation can be mitigated. Integration of thin-film ferromagnetic inductors with CMOS technology enables single-chip power converters to be co-packaged with processors, high bandwidth memory (HBM), and/or other modules. This paper highlights the advantages of fully integrated package voltage regulators (PVRs), which include: reducing package I/O allocated for power, eliminating the need for upstream power-conversion stages, and improving transient response. These benefits substantially reduce the size, weight, and power of modern electronic systems.


Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.


Author(s):  
Stefano Cipriani ◽  
Eric Duvivier ◽  
Gianni Puccio ◽  
Lorenzo Carpineto ◽  
Biagio Bisanti ◽  
...  

2019 ◽  
Vol 7 (4) ◽  
pp. 1022-1027 ◽  
Author(s):  
Tongkuai Li ◽  
Longlong Chen ◽  
Xiang Yang ◽  
Xin Chen ◽  
Zhihan Zhang ◽  
...  

High-performance pressure sensors have attracted considerable attention recently due to their promising applications in touch displays, wearable electronics, human–machine interfaces, and real-time physiological signal perception.


Sensors ◽  
2019 ◽  
Vol 19 (10) ◽  
pp. 2223 ◽  
Author(s):  
Mengwei Li ◽  
Teng Zhang ◽  
Pengcheng Wang ◽  
Minghao Li ◽  
Junqiang Wang ◽  
...  

Temperature is a significant factor in the application of graphene-based pressure sensors. The influence of temperature on graphene pressure sensors is twofold: an increase in temperature causes the substrates of graphene pressure sensors to thermally expand, and thus, the graphene membrane is stretched, leading to an increase in the device resistance; an increase in temperature also causes a change in the graphene electrophonon coupling, resulting in a decrease in device resistance. To investigate which effect dominates the influence of temperature on the pressure sensor based on the graphene–boron nitride (BN) heterostructure proposed in our previous work, the temperature characteristics of two BN/graphene/BN heterostructures with and without a microcavity beneath them were analyzed in the temperature range 30–150 °C. Experimental results showed that the resistance of the BN/graphene/BN heterostructure with a microcavity increased with the increase in temperature, and the temperature coefficient was up to 0.25%°C−1, indicating the considerable influence of thermal expansion in such devices. In contrast, with an increase in temperature, the resistance of the BN/graphene/BN heterostructure without a microcavity decreased with a temperature coefficient of −0.16%°C−1. The linearity of the resistance change rate (ΔR/R)–temperature curve of the BN/graphene/BN heterostructure without a microcavity was better than that of the BN/graphene/BN heterostructure with a microcavity. These results indicate that the influence of temperature on the pressure sensors based on BN/graphene/BN heterostructures should be considered, especially for devices with pressure microcavities. BN/graphene/BN heterostructures without microcavities can be used as high-performance temperature sensors.


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