Comparison of Wafer-Level With Package-Level CDM Stress Facilitated by Real-Time Probing

2011 ◽  
Vol 11 (4) ◽  
pp. 522-530 ◽  
Author(s):  
Nathan Jack ◽  
Vrashank Shukla ◽  
Elyse Rosenbaum
Keyword(s):  
Real Time ◽  
Wafer Level

Measurement of Creep and Relaxation Behaviors of Wafer-Level CSP Assembly Using Moire´ Interferometry

2003 ◽  
Vol 125 (2) ◽  
pp. 282-288 ◽  
Author(s):  
Suk-Jin Ham ◽  
Soon-Bok Lee
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Real Time ◽  
Room Temperature ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Wafer Level ◽  
Element Analysis ◽  
The Real ◽  
Thermal Chamber

In this paper, the creep and relaxation behaviors of a wafer-level CSP assembly under two types of thermal loading conditions were investigated using high sensitivity moire´ interferometry. One is a thermal load from 100°C to room temperature and the other is from room temperature to 100°C. In the second case, the real-time technique was used to monitor and measure the shear deformations of solder joints and the warpage of the assembly during the test. For the real-time measurements of thermal deformations, a small-sized thermal chamber having an optical window was developed. In addition, the test results obtained from the moire´ interferometry measurements were compared with the predicted values obtained from finite element analysis. It is shown that the deformation values predicted from finite element analysis have a good agreement with those obtained from the tests.

scholarly journals Real-time measurement of tumour hypoxia using an implantable microfabricated oxygen sensor

2020 ◽  
Author(s):  
Jamie R K Marland ◽  
Mark E Gray ◽  
Camelia Dunare ◽  
Ewen O Blair ◽  
Andreas Tsiamis ◽  
...  
Keyword(s):  
Real Time ◽  
Oxygen Sensor ◽  
Reference Electrode ◽  
Wafer Level ◽  
Sheep Model ◽  
Ct Guided ◽  
Electrolyte Membrane ◽  
Oxygen Selectivity ◽  
Acute Changes ◽  
Implantable Sensor

Hypoxia commonly occurs within tumours and is a major cause of radiotherapy resistance. Clinical outcomes could be improved by locating and selectively increasing the dose delivered to hypoxic regions. Here we describe a miniature implantable sensor for real-time monitoring of tissue oxygenation that could enable this novel treatment approach to be implemented. The sensor uses a solid-state electrochemical cell that was microfabricated at wafer level on a silicon substrate, and includes an integrated reference electrode and electrolyte membrane. It gave a linear response to oxygen concentration, and was unaffected by sterilisation and irradiation, but showed susceptibility to biofouling. Oxygen selectivity was also evaluated against various clinically relevant electroactive compounds. We investigated its robustness and functionality under realistic clinical conditions using a sheep model of lung cancer. The sensor remained functional following CT-guided tumour implantation, and was sufficiently sensitive to track acute changes in oxygenation within tumour tissue.

Yield Enhancement Using a Combination of Wafer Level Failure Analysis and Defect Isolation Software: Case Studies

2008 ◽  
Author(s):  
Pierre Simon ◽  
Michel Thétiot ◽  
Bernard Picart ◽  
Cathy Kardach ◽  
Herve Deslandes ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Real Time ◽  
Case Studies ◽  
Thermal Emission ◽  
Yield Enhancement ◽  
Wafer Level ◽  
Software Suite ◽  
Time Resolved ◽  
Defect Isolation ◽  
Emission Microscopy

Abstract Yield enhancement has always been an important topic but even more when processes are moving towards smaller geometries. Today, latest FA flow intends to check wafer quality to monitor production in real-time. The purpose is to adjust any derivation coming from the process as fast as possible. The Atmel-CIMPACA laboratory located in Rousset, France, can do Failure Analysis on wafer, thanks to its wafer prober designed to work on DCG systems equipment and integrated CAD software (Meridian, Emiscope, NEXS software suite). Wafer level yield analysis typically requires long setup and multiple dies analysis. Each of the die can be studied with a set a failure analysis (FA) techniques (photo or thermal) emission microscopy [1], laser stimulation techniques [2] or even dynamic probing using time resolved emission [3],[4] or laser based techniques, for the most common ones [5].

Some Recent Results in Quiescent Prominence Spectrometry

1979 ◽  
Vol 44 ◽  
pp. 41-47
Author(s):  
Donald A. Landman
Keyword(s):  
Real Time ◽  
Computer System ◽  
Spectral Response ◽  
Absolute Intensity ◽  
Solar Observatory ◽  
Target Size ◽  
Small Target ◽  
Signal Averaging ◽  
Quiescent Prominence

This paper describes some recent results of our quiescent prominence spectrometry program at the Mees Solar Observatory on Haleakala. The observations were made with the 25 cm coronagraph/coudé spectrograph system using a silicon vidicon detector. This detector consists of 500 contiguous channels covering approximately 6 or 80 Å, depending on the grating used. The instrument is interfaced to the Observatory’s PDP 11/45 computer system, and has the important advantages of wide spectral response, linearity and signal-averaging with real-time display. Its principal drawback is the relatively small target size. For the present work, the aperture was about 3″ × 5″. Absolute intensity calibrations were made by measuring quiet regions near sun center.

Video real-time imaging of artificial membranes during freeze-drying by cryo-electron microscopy

1988 ◽  
Vol 46 ◽  
pp. 16-17
Author(s):  
Alan S. Rudolph ◽  
Ronald R. Price
Keyword(s):  
Real Time ◽  
Self Assembly ◽  
Freeze Drying ◽  
Video Capture ◽  
Drying Process ◽  
Artificial Membranes ◽  
The Past ◽  
Cryo Electron Microscopy ◽  
Spherical Structures ◽  
Capture Techniques

We have employed cryoelectron microscopy to visualize events that occur during the freeze-drying of artificial membranes by employing real time video capture techniques. Artificial membranes or liposomes which are spherical structures within internal aqueous space are stabilized by water which provides the driving force for spontaneous self-assembly of these structures. Previous assays of damage to these structures which are induced by freeze drying reveal that the two principal deleterious events that occur are 1) fusion of liposomes and 2) leakage of contents trapped within the liposome [1]. In the past the only way to access these events was to examine the liposomes following the dehydration event. This technique allows the event to be monitored in real time as the liposomes destabilize and as water is sublimed at cryo temperatures in the vacuum of the microscope. The method by which liposomes are compromised by freeze-drying are largely unknown. This technique has shown that cryo-protectants such as glycerol and carbohydrates are able to maintain liposomal structure throughout the drying process.

An Interactive Minicomputer Program for the Indexing and Simulation of Electron Diffraction Patterns

1976 ◽  
Vol 34 ◽  
pp. 542-543
Author(s):  
R.P. Goehner ◽  
W.T. Hatfield ◽  
Prakash Rao
Keyword(s):  
Electron Diffraction ◽  
Real Time ◽  
Pattern Analysis ◽  
Flow Diagram ◽  
Hard Copy ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Transmission Electron ◽  
One Step ◽  
Diffraction Patterns

Computer programs are now available in various laboratories for the indexing and simulation of transmission electron diffraction patterns. Although these programs address themselves to the solution of various aspects of the indexing and simulation process, the ultimate goal is to perform real time diffraction pattern analysis directly off of the imaging screen of the transmission electron microscope. The program to be described in this paper represents one step prior to real time analysis. It involves the combination of two programs, described in an earlier paper(l), into a single program for use on an interactive basis with a minicomputer. In our case, the minicomputer is an INTERDATA 70 equipped with a Tektronix 4010-1 graphical display terminal and hard copy unit.A simplified flow diagram of the combined program, written in Fortran IV, is shown in Figure 1. It consists of two programs INDEX and TEDP which index and simulate electron diffraction patterns respectively. The user has the option of choosing either the indexing or simulating aspects of the combined program.

Microstructural investigation of surface roughness in MBE-grown AlAs

1995 ◽  
Vol 53 ◽  
pp. 454-455
Author(s):  
R. Rajesh ◽  
R. Droopad ◽  
C. H. Kuo ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Growth Control ◽  
Native Oxide ◽  
Effusion Cell ◽  
Surface Oxide Layer ◽  
Microstructural Investigation ◽  
Mbe Growth ◽  
Film Substrate ◽  
And Control

Knowledge of material pseudodielectric functions at MBE growth temperatures is essential for achieving in-situ, real time growth control. This allows us to accurately monitor and control thicknesses of the layers during growth. Undesired effusion cell temperature fluctuations during growth can thus be compensated for in real-time by spectroscopic ellipsometry. The accuracy in determining pseudodielectric functions is increased if one does not require applying a structure model to correct for the presence of an unknown surface layer such as a native oxide. Performing these measurements in an MBE reactor on as-grown material gives us this advantage. Thus, a simple three phase model (vacuum/thin film/substrate) can be used to obtain thin film data without uncertainties arising from a surface oxide layer of unknown composition and temperature dependence.In this study, we obtain the pseudodielectric functions of MBE-grown AlAs from growth temperature (650°C) to room temperature (30°C). The profile of the wavelength-dependent function from the ellipsometry data indicated a rough surface after growth of 0.5 μm of AlAs at a substrate temperature of 600°C, which is typical for MBE-growth of GaAs.

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