scholarly journals Laser Spike Annealing for Shallow Junctions in Ge CMOS

2017 ◽  
Vol 64 (2) ◽  
pp. 346-352 ◽  
Author(s):  
William Hsu ◽  
Feng Wen ◽  
Xiaoru Wang ◽  
Yun Wang ◽  
Andrei Dolocan ◽  
...  
2001 ◽  
Vol 669 ◽  
Author(s):  
Veerle Meyssen ◽  
Peter Stolk ◽  
Jeroen van Zijl ◽  
Jurgen van Berkum ◽  
Willem van de Wijgert ◽  
...  

ABSTRACTThis paper studies the use of ion implantation and rapid thermal annealing for the fabrication of shallow junctions in sub-100 nm CMOS technology. Spike annealing recipes were optimized on the basis of delta-doping diffusion experiments and shallow junction characteristics. In addition, using GeF2 pre-amorphization implants in combination with low-energy BF2 and spike annealing, p-type junctions depths of 30 nm were obtained with sheet resistances as low as 390 Ω/sq. The combined finetuning of implantation and annealing conditions is expected to enable junction scaling into the 70-nm CMOS technology node.


2008 ◽  
Author(s):  
Frank Torregrosa ◽  
Hasnaa Etienne ◽  
Guillaume Sempere ◽  
Gilles Mathieu ◽  
Laurent Roux ◽  
...  

1979 ◽  
Vol 80 (1) ◽  
pp. 96-117 ◽  
Author(s):  
C Sardet ◽  
M Pisam ◽  
J Maetz

Various species of teleostean fishes were adapted to fresh or salt water and their gill surface epithelium was examined using several techniques of electron microscopy. In both fresh and salt water the branchial epithelium is mostly covered by flat respiratory cells. They are characterized by unusual outer membrane fracture faces containing intramembranous particles and pits in various stages of ordered aggregation. Freeze fracture studies showed that the tight junctions between respiratory cells are made of several interconnecting strands, probably representing high resistance junctions. The organization of intramembranous elements and the morphological characteristics of the junctions do not vary in relation to the external salinity. Towards the base of the secondary gill lamellae, the layer of respiratory cells is interrupted by mitochondria-rich cells ("chloride cells"), also linked to respiratory cells by multistranded junctions. There is a fundamental reorganization of the chloride cells associated with salt water adaptation. In salt water young adjacent chloride cells send interdigitations into preexisting chloride cells. The apex of the seawater chloride cell is therefore part of a mosaic of sister cells linked to surrounding respiratory cells by multistranded junctions. The chloride cells are linked to each other by shallow junctions made of only one strand and permeable to lanthanum. It is therefore suggested that salt water adaptation triggers a cellular reorganization of the epithelium in such a way that leaky junctions (a low resistance pathway) appear at the apex of the chloride cells. Chloride cells are characterized by an extensive tubular reticulum which is an extension of the basolateral plasma membrane. It is made of repeating units and is the site of numerous ion pumps. The presence of shallow junctions in sea water-adapted fish makes it possible for the reticulum to contact the external milieu. In contrast in the freshwater-adapted fish the chloride cell's tubular reticulum is separated by deep apical junctions from the external environment. Based on these observations we discuss how solutes could transfer across the epithelium.


1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.


1991 ◽  
Vol 236 ◽  
Author(s):  
A. Slaoui ◽  
M. Elliq ◽  
H. Pattyn ◽  
E. Fogarassy ◽  
S. De Unamuno ◽  
...  

AbstractThis work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.


1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.


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