The Effect of Shallow Trap Density on the Electrical Characteristics of an Organic Nonvolatile Memory Device Based on Eight-Hydroxyquinoline

2021 ◽  
Vol 68 (3) ◽  
pp. 1235-1241
Author(s):  
Peng Zhang ◽  
Yun Guo ◽  
Keyang Cao ◽  
Mingdong Yi ◽  
Liya Huang ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Trap Density ◽  
Electrical Characteristics ◽  
Shallow Trap ◽  
Nonvolatile Memory Device

Flexible Nanoporous WO3–x Nonvolatile Memory Device

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7598-7603 ◽  
Author(s):  
Yongsung Ji ◽  
Yang Yang ◽  
Seoung-Ki Lee ◽  
Gedeng Ruan ◽  
Tae-Wook Kim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Al Doping ◽  
Nonvolatile Memory Device

Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device

2011 ◽  
Vol 24 (3) ◽  
pp. 385-390 ◽  
Author(s):  
Nam-Goo Kang ◽  
Byungjin Cho ◽  
Beom-Goo Kang ◽  
Sunghoon Song ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Memory Device ◽  
Nonvolatile Memory Device

Low-voltage electro-optical memory device based on NiO nanorods dispersed in a ferroelectric liquid crystal

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 53873-53881 ◽  
Author(s):  
Achu Chandran ◽  
Jai Prakash ◽  
Jitendra Gangwar ◽  
Tilak Joshi ◽  
Avanish Kumar Srivastava ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Low Power ◽  
Nickel Oxide ◽  
Nonvolatile Memory ◽  
Low Voltage ◽  
Optical Memory ◽  
Memory Device ◽  
Ferroelectric Liquid Crystal ◽  
Oxide Nanorods ◽  
Nonvolatile Memory Device

A low-power nonvolatile memory device is fabricated by dispersing nickel oxide nanorods (nNiO) into a ferroelectric liquid crystal (FLC) host. The dipolar nNiO adsorbed ions in the FLC and thereby reduced the screening effect, which resulted in the enhanced memory behavior.

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