Laser Diagnostics of Plasma in Synthesis of Graphene-Based Materials

2014 ◽  
Vol 2 (3) ◽  
Author(s):  
Alfredo D. Tuesta ◽  
Aizaz Bhuiyan ◽  
Robert P. Lucht ◽  
Timothy S. Fisher
Keyword(s):  
Microwave Plasma ◽  
Laser Diagnostics ◽  
Rotational Temperature ◽  
Chemical Vapor ◽  
Plasma Generator ◽  
Measured Temperature ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Anti Stokes ◽  
Reactor Pressure

Rotational temperature profiles of H2 in a microwave plasma chemical vapor deposition (MPCVD) reactor were measured via coherent anti-Stokes Raman scattering (CARS) spectroscopy. The temperature was found to increase with reactor pressure, plasma generator power, and distance from the deposition surface. At 10 Torr, the measured temperature range was approximately 700–1200 K while at 30 Torr it was 1200–2000 K under the conditions studied. The introduction of CH4 and N2 to the plasma increased the rotational temperature consistently. These findings will aid in understanding the function of the chemical composition and reactions in the plasma environment of these reactors which, to date, remains obscure.

H2 Mole Fraction Measurements in a Microwave Plasma Using Coherent Anti-Stokes Raman Scattering Spectroscopy

2015 ◽  
Vol 4 (1) ◽  
Author(s):  
Alfredo D. Tuesta ◽  
Aizaz Bhuiyan ◽  
Robert P. Lucht ◽  
Timothy S. Fisher
Keyword(s):  
Mole Fraction ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Sheath ◽  
Plasma Chemical ◽  
Raman Scattering Spectroscopy ◽  
Plasma Chemical Vapor Deposition ◽  
Hot Band ◽  
Anti Stokes

In an effort to provide insights into the thermochemical composition of a microwave plasma chemical vapor deposition (MPCVD) reactor, the mole fraction of H2 is measured at various positions in the plasma sheath, at pressures of 10 and 30 Torr, and at plasma powers ranging from 300 to 700 W. A technique is developed by comparing the Q(1)01 transition of experimental and theoretical spectra aided by the Sandia CARSFT fitting routine. Results reveal that the mole fraction of H2 does not vary significantly from its theoretical mixture at the parametric conditions examined. Furthermore, the ν″=1→ν′=2 vibrational hot band was searched, but no transitions were found. An analytical explanation for the increase in the temperature of H2 with the introduction of N2 and CH4 is also presented. Finally, because the mole fraction of H2 does not appear to deviate from the theoretical composition, the rotational and translational modes of H2 are shown to be approximately in equilibrium, and therefore, the rotational temperatures may be used to estimate the translational temperatures of H2.

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized

Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition

2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Plasma Reactors ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

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