Analysis of Topographical Changes and Adhesion Failures in Gold-to-Gold Metal RF MEMS Switches With Cycling

2009 ◽  
Author(s):  
Seung Min Yeo ◽  
Spyros I. Tseregounis ◽  
Andreas A. Polycarpou ◽  
Adam Fruehling ◽  
Dimitrios Peroulis
Keyword(s):  
Contact Area ◽  
Contact Surface ◽  
Rf Mems ◽  
Critical Factor ◽  
Bottom Surface ◽  
Material Transfer ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Gold Contact

Topographical changes within the contact area as a function of cycling could be a critical factor causing failure and reliability issues in RF MEMS switch operation. In this paper, gold-to-gold contact, cantilever-type RF MEMS switches were tested (cold-switching mode) for different number of cycles, namely, 10, 102, 103, 104, 105, and 106. After the cycling tests, the contact area of each switch was scanned using optical microscopy, scanning electron microscopy and atomic force microscopy to quantify the exact gold-to-gold contact surface changes, leading to adhesion failures (at about 106 cycles). Detailed roughness analysis was carried out to better quantify topographical changes on the contact surface and relate them to failures. It was found that the material transfer from the top beam to the bottom substrate was dominant, and observed after only few cycles. Adhesion failure of gold-to-gold contact switches could be attributed to large protrusions formed on the bottom surface as the switch cycles over 105 times.

The Oxygen Plasma Dry Release Process of the Membrane Bridge of RF MEMS Switches

2013 ◽  
Vol 562-565 ◽  
pp. 1238-1241
Author(s):  
Li Li Jiang ◽  
Shi Xing Jia ◽  
J. Zhu
Keyword(s):  
Oxygen Plasma ◽  
Rf Mems ◽  
Process Time ◽  
Bottom Surface ◽  
Release Process ◽  
Rf Mems Switch ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Dry Etch

In this paper the oxygen plasma dry release process for membrane-bridge RF MEMS switches is studied and several methods are used to improve the dry release process. The residual PR (Photoresist) on the device substrate after different process time are observed and measured in this paper. The measured data shows that the residual PR exponentially reduces with etch time. It is found that the residual PR on the bottom surface of the membrane bridge is more than that on the substrate. The completely released RF MEMS switch using oxygen plasma dry etch process is obtained.

scholarly journals Performance Comparison Of Shunt Rf Mems Switches

2021 ◽  
Vol 12 (5) ◽  
pp. 596-606
Author(s):  
S Girish Gandhi, I Govardhani, M Venkata Narayana, K Sarat Kumar
Keyword(s):  
Comparative Study ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Switching Time ◽  
Performance Comparison ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
And Performance

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

Analysis of Cycle Lifetimes and Failure Modes for RF MEMS Switches

2005 ◽  
Author(s):  
Chris Brown ◽  
Jacqueline Krim ◽  
Art Morris
Keyword(s):  
Failure Modes ◽  
Electrode Materials ◽  
Rf Mems ◽  
Operating Parameters ◽  
Rf Mems Switch ◽  
Testing Conditions ◽  
Mems Switches ◽  
Mems Switch ◽  
Contact Points ◽  
Rf Mems Switches

RF MEMS switch lifetimes are limited by stiction of the moving components and degradation of the metal to metal contact points during cycling. Currently, maximum switch lifetimes are around 10 to 25 billion cycles. Past experimentation has shown that some stiction problems can be overcome by carefully controlling the operating parameters, but problems at the contact points remain [1]. It is believed that by developing a set of tribological design rules which limit the factors leading to catastrophic failure, switches can operate in excess of 100 billion cycles. Recent research has quantified the reliability and durability of gold contact points on RF MEMS switches as a function of current [2]. Most experimentation on RF MEMS switches has focused on controlling the operating parameters such as current, voltage, electrode materials, contact area, switching mode and force; however, limited work has been performed on a single device type in multiple environmentally controlled testing conditions such as vacuum, cryogenic temperatures, etc. This presentation will discuss performance of the wiSpry RF MEMS switch focusing on quantification of device reliability and failure mechanisms under various atmospheric and temperature conditions. Environmental testing conditions include switching in open air, vacuum and inert gasses, in temperatures ranging from 294 K to 4 K.

Quantification of Uncertainty in Creep Failure in RF-MEMS Switches

2012 ◽  
Author(s):  
Peter A. Kolis ◽  
Marisol Koslowski ◽  
Anil K. Bajaj
Keyword(s):  
Rf Mems ◽  
Beam Model ◽  
Creep Failure ◽  
Micro Electro Mechanical Systems ◽  
Modal Expansion ◽  
Mems Switches ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Rf Mems Switches

We present simulations of the dynamic response of radio frequency micro-electro-mechanical-systems (RF-MEMS) switches undergoing creep deformation. The model includes a microscale-informed Coble creep formulation incorporated in a beam model of an electrostatically actuated RF-MEMS switch, and it is solved using a Ritz-Galerkin based modal expansion. The resulting effects on the long-term device behavior as well as the implications of uncertainty in the device geometry and material parameters are studied. We find that the addition of creep to the beam model results in an undesired degradation of the device performance, as evidenced by decreases in the closing and release voltages.

Development of Piezoelectric RF-MEMS Switch Driven by Low Operating Voltage

2005 ◽  
Author(s):  
Isaku Kanno ◽  
Takaaki Suzuki ◽  
Hironobo Endo ◽  
Hidetoshi Kotera
Keyword(s):  
Thin Films ◽  
Rf Mems ◽  
Low Voltage ◽  
Operating Voltage ◽  
Pzt Thin Films ◽  
Mems Switches ◽  
Mems Switch ◽  
Low Voltage Operation ◽  
Rf Components ◽  
Rf Mems Switches

This paper presents the possibility of piezoelectric RF-MEMS switches for low voltage operation. The switches we fabricated consist of micro-cantilevers using PZT thin films with the length of 490 μm and the width of 87 μm. The cantilevers are actuated as unimorph actuators that can be deflected by applying voltage between upper and lower electrodes. We could obtain large tip deflection of 3 μm even at the low voltage of 5.0V, which is well compatible with conventional IC drivers. This result indicates that the RF-MEMS switches using piezoelectric PZT thin films is advantageous to the low voltage switching devices in RF components compared with conventionally proposed electrostatic ones.

scholarly journals Artifical neural networks in RF MEMS switch modelling

2016 ◽  
Vol 29 (2) ◽  
pp. 177-191 ◽  
Author(s):  
Zlatica Marinkovic ◽  
Vera Markovic ◽  
Tomislav Ciric ◽  
Larissa Vietzorreck ◽  
Olivera Pronic-Rancic
Keyword(s):  
Neural Networks ◽  
Artificial Neural Networks ◽  
Communication Systems ◽  
Rf Mems ◽  
Mems Switches ◽  
Mems Switch ◽  
Artifical Neural Networks ◽  
Rf Mems Switches ◽  
Artificial Neural ◽  
Similar Accuracy

The increased growth of the applications of RF MEMS switches in modern communication systems has created an increased need for their accurate and efficient models. Artificial neural networks have appeared as a fast and efficient modelling tool providing similar accuracy as standard commercial simulation packages. This paper gives an overview of the applications of artificial neural networks in modelling of RF MEMS switches, in particular of the capacitive shunt switches, proposed by the authors of the paper. Models for the most important switch characteristics in electrical and mechanical domains are considered, as well as the inverse models aimed to determine the switch bridge dimensions for specified requirements for the switch characteristics.

A Stamp-Sealed Microshell Package for RF MEMS Switches

2007 ◽  
Author(s):  
John Heck ◽  
Hanan Bar ◽  
Tsung-Kuan A. Chou ◽  
Quan Tran ◽  
Qing Ma ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Rf Mems ◽  
Mems Devices ◽  
Wafer Level ◽  
Subsequent Formation ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Unique Method ◽  
Chemical Etchant

This paper describes a unique method of encapsulating MEMS switches at the wafer level using a thin-film “microshell” lid and a novel micro-embossing, or “stamping” technique to seal the lid. After fabrication of the MEMS switch and subsequent formation of the microshell, the switches are released through gold tunnels that allow the penetration of a chemical etchant. In a controlled ambient, a “stamp” wafer is aligned to the device wafer, and the wafers are thermally compressed together. This process applies pressure across each tunnel to fuse the gold, thereby sealing the microshell packages. By sealing and passivating the switches at the wafer level, the wafers can be exposed to backend processing, packaging, and assembly steps such as dicing without damaging the sensitive MEMS devices. Furthermore, the size, cost, and complexity of the packaged system are significantly reduced compared to standard wafer bonding processes.

The Effect of Dielectric Charging on Capacitive MEMS Switch

2014 ◽  
Vol 511-512 ◽  
pp. 732-736
Author(s):  
Qin Wen Huang ◽  
Xiang Guang Li ◽  
Yun Hui Wang ◽  
Yu Bin Jia
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Deposition Process ◽  
Dielectric Surface ◽  
One Dimensional ◽  
Mems Switches ◽  
Dielectric Charging ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Capacitive Mems

Based on a one-dimensional model of dielectric charging for capacitive RF MEMS switches, the accumulated charge density and actuation voltage shift were simulated. The results illustrate that rougher surface can reduce dielectric charging, so the dielectric layer should be fabricated much rougher during deposition process. But the capacitance ratio of switch will be decreased with rougher surface, which can cause a reduction of switch performance. Thus the dielectric surface roughness should be balanced in reliability and isolation.

Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

2017 ◽  
Vol 2017 (NOR) ◽  
pp. 1-4
Author(s):  
Selin Tolunay Wipf ◽  
Alexander Göritz ◽  
Matthias Wietstruck ◽  
Maurizio Cirillo ◽  
Christian Wipf ◽  
...  
Keyword(s):  
Rf Mems ◽  
Wafer Level ◽  
3D Fem ◽  
Rf Mems Switch ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Bicmos Technology ◽  
Switch Performance ◽  
Rf Performance

Abstract In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25μm SiGe BiCMOS technology for K-band (18 – 27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1 Ω·cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.

Design and Simulation a Low Voltage Actuated RF MEMS Switch with Improve RF Characteristics

2011 ◽  
Vol 403-408 ◽  
pp. 4199-4204 ◽  
Author(s):  
Tohid Zargar Ershadi ◽  
Ehsan Salimi ◽  
Habibollah Zolfkhani
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Mems Switches ◽  
Mems Switch ◽  
V Band ◽  
High Impedance ◽  
Full Wave ◽  
Rf Mems Switches ◽  
Double Beam ◽  
State Position

This paper present, the design and simulation of the Ka to v band RF-MEMS capacitive switch. The mechanic design and analysis of the RF-MEMS switches are based on both the finite element method and the full-wave electromagnetic simulation. A double-beam switch with a high impedance short transmission line is proposed to improve RF characteristics. The electronic characteristics, of the switches including insertion and return losses in up-state position, were more than -0.11 dB and less than -23 dB , respectively and isolation on down-state position was more than -30 dB on 50 GHZ frequency. In order to make lower actuated voltage, a serpentine spring folded suspension beam and low actuated area were used so that some important issues such as life and reliability of switch were considered in design.

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