Development of Cryogenic Power Modules for Superconducting Hybrid Power Electronic System

2008 ◽  
Author(s):  
Hua Ye ◽  
Pradeep Haldar
Keyword(s):  
High Performance ◽  
Electronic System ◽  
Power Module ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Power Modules ◽  
Continuous Current ◽  
Power Inverters ◽  
Current Carrying Capability ◽  
Single Power

This paper presents the developments of high-performance integrated cryogenic power modules, where both driver components and power MOSFETs are integrated in a single package. These modules are designed to be used in liquid nitrogen environment with extreme thermal cycling for the cryogenic power inverters. Compact high-voltage, cryogenic integrated power modules with single power MOSFET that exhibited more than 14x improvement in on-resistance and continuous current-carrying capability exceeding 40A. A multi-power MOSFETs integrated cryogenic power module is then developed in order to further increase the power density and reduce the size and weight of the cryogenic power system. The multi-power MOSFETs module was demonstrated to be able to carry a current above 100A with only a small increase in footprint compared with the single power MOSFET module. At the current level of 100A, the multi-power MOSFETs module has an on-resistance of 5.5mU` at 77K, which is 6 times smaller than that of the single power MOSFET integrated module developed. Two different design approaches taken in the developments of these modules are discussed in this paper.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

A High Performance Power Module with >10kV capability to Characterize and Test In Situ SiC Devices at >200°C Ambient

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000149-000158
Author(s):  
Xin Zhao ◽  
Haotao Ke ◽  
Yifan Jiang ◽  
Adam Morgan ◽  
Yang Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Performance ◽  
Power Module ◽  
Module Design ◽  
Power Modules ◽  
Operational Temperature ◽  
Full Power ◽  
Temperature Applications

Abstract This paper presents design, fabrication and characterization details of a 10kV power module package for >200°C ambient temperature applications. Electrical simulations were performed to confirm the module design, and that the electric field distribution throughout the module did not exceed dielectric capabilities of components and materials. A suitable copper etching process was demonstrated for DBC layout, and a high melting point Sn/Pb/Ag solder reflow process was developed for device and component attachment. To monitor the operational temperature of the module, a thermistor was integrated onto the substrate. A new silicone gel, having a working temperature up to 210°C, was evaluated and selected for encapsulation and, of great importance, for passivation of high voltage (10kV) SiC dies. An additive manufacturing ‘Design Process’ was developed and applied to printing the housings, molds, and test fixtures. Also, cleaning processes were evaluated for every step in the fabrication process. To verify performance of the modules, mechanical dies were mounted on the substrates, and a high temperature testing setup built to characterize the modules at high temperature. Measurements indicated that the module can operate up to 12kV within 25°C to 225°C, with less than 0.1 μA leakage current. The packaging was used for full-power characterization of developmental 10kV SiC diodes, and proved that the power module packaging satisfied all requirements for high voltage and high temperature applications. This work successfully validated the processes for creating high voltage (>10 kV) and high temperature (>200°C) power modules.

The Design and Evaluation of an Integrated Wire-Bondless Power Module (IWPM) using Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000065-000072 ◽  
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Wide Band ◽  
Power Devices ◽  
Power Module ◽  
Wide Band Gap ◽  
Fast Switching ◽  
Power Modules ◽  
Wide Band Gap Semiconductors

Abstract This paper presents the plan and initial feasibility studies for an Integrated Wire Bondless Power Module (IWPM). Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices themselves owing to the advent of wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN). SiC has capabilities of operating at much higher temperatures and faster switching speeds as compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high performance package of sufficient reliability. This paper lays the foundation for an electronic package which is designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability.

The Design and Evaluation of an Integrated Wire Bond-less Power Module using a Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 13 (4) ◽  
pp. 169-175
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Power Devices ◽  
Power Module ◽  
Fast Switching ◽  
Wire Bond ◽  
Power Modules ◽  
Bandgap Semiconductors

This article presents the plan and initial feasibility studies for an Integrated Wire Bond-less Power Module. Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices owing to the advent of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride. SiC has capabilities of operating at much higher temperatures and faster switching speeds compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High-performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high-performance package of sufficient reliability. This article lays the foundation for an electronic package designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability. The interconnections between the gate drive circuitry and the power devices were implemented using a low temperature cofired ceramic interposer.

scholarly journals An Approach for Estimating the Reliability of IGBT Power Modules in Electrified Vehicle Traction Inverters

Vehicles ◽  
2020 ◽  
Vol 2 (3) ◽  
pp. 413-423
Author(s):  
Animesh Kundu ◽  
Aiswarya Balamurali ◽  
Philip Korta ◽  
K. Lakshmi Varaha Iyer ◽  
Narayan C. Kar
Keyword(s):  
Mathematical Models ◽  
Electric Vehicles ◽  
Power Loss ◽  
High Performance ◽  
Reliability Estimation ◽  
Power Module ◽  
Power Modules ◽  
Accurate Stress Analysis ◽  
Useful Lifetime ◽  
Accurate Stress

The reliability analysis of traction inverters is of great interest due to the use of new semi-conductor devices and inverter topologies in electric vehicles (EVs). Switching devices in the inverter are the most vulnerable component due to the electrical, thermal and mechanical stresses based on various driving conditions. Accurate stress analysis of power module is imperative for development of compact high-performance inverter designs with enhanced reliability. Therefore, this paper presents an inverter reliability estimation approach using an enhanced power loss model developed considering dynamic and transient influence of power semi-conductors. The temperature variation tracking has been improved by incorporating power module component parameters in an LPTN model of the inverter. A 100 kW EV grade traction inverter is used to validate the developed mathematical models towards estimating the inverter performance and subsequently, predicting the remaining useful lifetime of the inverter against two commonly used drive cycles.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000297-000304 ◽  
Author(s):  
B. Reese ◽  
B. McPherson ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Performance ◽  
Single Phase ◽  
University Of Arkansas ◽  
Power Module ◽  
Power Modules ◽  
Gate Driver ◽  
Switch Position ◽  
The University

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.

Module and System Considerations to Maximize Performance Advantages of SiC Power Devices

2018 ◽  
Vol 924 ◽  
pp. 883-886
Author(s):  
Ty McNutt ◽  
Kraig Olejniczak ◽  
Stephen Minden ◽  
Daniel Martin ◽  
Jonathan Hayes ◽  
...  
Keyword(s):  
High Frequency ◽  
System Performance ◽  
High Speed ◽  
Power Devices ◽  
Power Module ◽  
Module Design ◽  
Power Modules ◽  
Bus Structure ◽  
Full Power ◽  
Current Carrying Capability

This paper extends a previously presented SiC power module design philosophy to critical, higher-level components for increased system performance, namely the DC bussing and DC link capacitor design. The DC bussing is essential to connect the DC bulk capacitors to the high-speed power modules and it is imperative that low inductance is maintained while current carrying capability and temperature be maintained. Often, high frequency capacitors are added to systems to increase performance by compensating for extra stray inductance that the DC bussing can introduce. However, issues that may arise by doing such are presented and it is shown that the best solution is to optimize the DC bus structure rather than compensate for a poor design. Finally, the implemented bussing is shown and full power system results presented for the inverter stack-up design.

OLIN C197

Alloy Digest ◽  
1999 ◽  
Vol 48 (1) ◽  
Keyword(s):  
Thermal Conductivity ◽  
Wear Resistance ◽  
Physical Properties ◽  
Tensile Properties ◽  
High Performance ◽  
Corrosion And Wear ◽  
Contact Forces ◽  
High Current ◽  
Lower Strength ◽  
Current Carrying Capability

Abstract Olin C197 is a second-generation high performance alloy developed by Olin Brass. It has a strength and bend formability similar to C194 (see Alloy Digest Cu-360, September 1978), but with 25% higher electrical and thermal conductivity. High conductivity allows C197 to replace brasses and bronzes in applications where high current-carrying capability is required. Also, the strength of C197 provides higher contact forces when substituted for many lower strength coppers. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion and wear resistance as well as forming and joining. Filing Code: CU-627. Producer or source: Olin Brass.

Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling

2005 ◽  
Vol 128 (3) ◽  
pp. 267-272 ◽  
Author(s):  
Hua Ye ◽  
Harry Efstathiadis ◽  
Pradeep Haldar
Keyword(s):  
Liquid Nitrogen ◽  
Electrical Current ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Electronic Systems ◽  
Power Module ◽  
Power Modules ◽  
Allowable Range ◽  
Liquid Nitrogen Cooling ◽  
Thermal Simulations

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

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