Micro-Scale Thermal Sensor Manufacturing and Measurement of Temperature Uniformity on Wafer Surface

2013 ◽  
Author(s):  
Jun Young Kim ◽  
Kyung Min Jang ◽  
Hong Cheon Yang ◽  
Kwang-Sun Kim
Keyword(s):  
Measurement Method ◽  
Wafer Surface ◽  
Thermal Sensor ◽  
Temperature Uniformity ◽  
Thermal Measurement ◽  
Micro Scale ◽  
Thermal Distribution ◽  
Scale Temperature ◽  
Thin Film Thermocouple ◽  
Lift Off

In this research, uniformity of temperature on wafer in fine scale was investigated. A measurement system has been developed, and a sensor as thin-film thermocouple was fabricated using a lift-off process. To generate EMF voltage by Seebeck effect, Chromel and Alumel materials were used for the thermocouple. The system obtains the micro scale temperature from multi-points on the surface of the wafer and then precisely analyzes thermal distribution. A numerical analysis was performed to compare to the measurement method. The experimental results and the analysis shows the system can be used for thermal measurement in a micro scale.

Micro-Scale Thermal Sensor Manufacturing for Semiconductor Furnace Chamber

2012 ◽  
Author(s):  
Hongcheon Yang ◽  
Jun Young Kim ◽  
Kwang-Sun Kim
Keyword(s):  
Semiconductor Device ◽  
Furnace Chamber ◽  
Small Scale ◽  
Thermal Sensor ◽  
Micro Scale ◽  
Thermoelectric Voltage ◽  
Scale Temperature ◽  
Pattern Size ◽  
Different Temperatures ◽  
Analog Voltage

As the demand of complex and small scale semiconductor devices has been increased, the measurement technologies were developed to meet the accurate requirement in semiconductor manufacturing process. The uniform temperature requirement on the wafer is the major factor related to the semiconductor device yield. It is normally acquired from the thermocouples following the inner wall of the chamber. However, since the temperature difference between the wall of equipment and the surface of wafer is existed, the actual wafer temperature is commonly measured by a thermocouple wafer to calibrate the temperature measurement accuracy of the equipment. However, as the diameter of the commercial thermocouple wires is larger than the recently demanded pattern size, the TC wafer has not been able to measure the micro scale temperature differences on the micro patterned wafer. We, therefore, designed a micro-scale thermal sensor. The developed sensor has 37 sets of the measurement points on a 4-inch silicon wafer. The size of the measurement point is approximate to 16 um2. Two alloys, chromel and alumel which are as same as the materials of the K-type thermocouple are used to generate the thermoelectric voltage. The sensor has the temperature range of −200°C to 1300°C. The commercial K-type thermocouple extension wires are connected to the pads of the sensor array and they transfer the analog voltage data to a data acquisition device (DAQ). The sensor was calibrated by comparing the EMF voltage at different temperatures to the standard thermocouple EMF voltage. With the developed micro-scale thermal sensor system, the temperature distribution of the wafer in the furnace chamber is obtained.

A New Scanning Thermal Microprobe

1997 ◽  
Vol 503 ◽  
Author(s):  
Yongxia Zhang ◽  
Yanwei Zhang ◽  
Juliana Blaser ◽  
T. S. Sriiram ◽  
R. B. Marcus
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thermal Response ◽  
Temperature Sensing ◽  
Thermal Sensor ◽  
Atomic Force ◽  
Thin Film Thermocouple ◽  
Processing Steps ◽  
Thermocouple Junction

ABSTRACTA thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an Atomic Force Microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. The thermal response over the range 25–s 4.5–rovolts per degree C and is linear.

scholarly journals Optimisation of amplitude distribution of magnetic Barkhausen noise

2017 ◽  
Vol 68 (5) ◽  
pp. 384-389
Author(s):  
Jozef Pal’a ◽  
Vladimír Jančárik
Keyword(s):  
Measurement Method ◽  
Measurement Accuracy ◽  
Amplitude Distribution ◽  
Barkhausen Noise ◽  
Significant Issue ◽  
Magnetic Barkhausen Noise ◽  
Non Destructive Evaluation ◽  
Treatment Conditions ◽  
Lift Off ◽  
Non Destructive

Abstract The magnetic Barkhausen noise (MBN) measurement method is a widely used non-destructive evaluation technique used for inspection of ferromagnetic materials. Besides other influences, the excitation yoke lift-off is a significant issue of this method deteriorating the measurement accuracy. In this paper, the lift-off effect is analysed mainly on grain oriented Fe-3%Si steel subjected to various heat treatment conditions. Based on investigation of relationship between the amplitude distribution of MBN and lift-off, an approach to suppress the lift-off effect is proposed. Proposed approach utilizes the digital feedback optimising the measurement based on the amplitude distribution of MBN. The results demonstrated that the approach can highly suppress the lift-off effect up to 2 mm.

scholarly journals Real-time micro-scale temperature imaging at low cost based on fluorescent intensity ratio

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Jianghao Xiong ◽  
Mingshu Zhao ◽  
Xiaotian Han ◽  
Zhongmin Cao ◽  
Xiantao Wei ◽  
...  
Keyword(s):  
Real Time ◽  
Intensity Ratio ◽  
Low Cost ◽  
Fluorescent Intensity ◽  
Temperature Imaging ◽  
Micro Scale ◽  
Scale Temperature ◽  
Fluorescent Intensity Ratio

Visualization of Iron Loss Distribution by Thermal Measurement Method

2013 ◽  
Vol 133 (4) ◽  
pp. 217-223
Author(s):  
Hiroyasu Shimoji ◽  
Takashi Todaka ◽  
Masato Enokizono
Keyword(s):  
Measurement Method ◽  
Iron Loss ◽  
Thermal Measurement ◽  
Loss Distribution

Warp Measurement for Large-Diameter Silicon Wafer Using Four-Point-Support Inverting Method

2017 ◽  
Vol 11 (5) ◽  
pp. 721-727 ◽  
Author(s):  
Yukihiro Ito ◽  
Masanori Kunieda ◽  
◽  
Keyword(s):  
Measurement Method ◽  
Large Diameter ◽  
High Accuracy ◽  
Surface Shape ◽  
Wafer Surface ◽  
Shape Measurement ◽  
Air Bearing ◽  
Point Support ◽  
Central Support ◽  
Additional Support

Recently, the production of silicon wafers 450 mm in diameter has begun. However, a precise method for warp measurement of 450 mm wafers has not yet been established. Hence, the authors have developed a four-point-support inverting method to measure the warp shapes of large diameter wafers with high accuracy. The principle of this measurement method is equivalent to that for the three-point-support inverting method developed for warp measurement of 300 mm wafers. In the four-point-support inverting method, surface shape measurement can be performed with decreased deflection due to gravity using an additional central support. In this study, the principle of the proposed measurement method was verified experimentally. It was found that the four-point-support inverting method could measure the warp of a 300 mm wafer with high accuracy, equivalent to that of the three-point-support inverting method. However, in this experiment, a steel ball was used for additional support which caused concern regarding damage to the wafer surface at the point of contact with the support. Hence, a noncontact support method using an air bearing was proposed. It was found that the noncontact support method could measure the warp with accuracy equivalent to the contact support method described previously. Moreover, this study demonstrates the superiority of the four-point-support method to the three-point-support method regarding the repeatability of the warp measurement.

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